Plasma ashing method and apparatus therefor

• US 5,226,056 A
• Filed: 01/09/1990
• Issued: 07/06/1993
• Est. Priority Date: 01/10/1989
• Status: Expired due to Term

• Current Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
• Original Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
• Inventors: Kikuchi, Masashi, Takata, Toshinari, Watanabe, Tokuo
• Primary Examiner(s): Reynolds, Bruce A.
• Assistant Examiner(s): Hoang, Tu
• Application Number:
  US07/462,380
• Time in Patent Office: 1,274 Days
• Field of Search: 156/643, 156/646, 156/668, 156/345, 204/192 E, 204/164, 204/298, 373/40, 373/18, 373/22, 373/62, 219/10.55 E, 219/10.55 M, 219/10.67, 219/121.43, 219/390, 219/121.11, 219/121.36, 219/121.37, 219/121.4, 219/121.41, 219/383
• US Class Current: 373/18
• CPC Class Codes: G03F 7/427 using plasma means only
• CPC Class Codes: H01J 2237/2001 Maintaining constant desired temperature
• CPC Class Codes: H01J 2237/3342 Resist stripping
• CPC Class Codes: H01J 37/32733 Means for moving the material to be treated
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/67098 Apparatus for thermal treatment
• CPC Class Codes: H01L 21/67742 Mechanical parts of transfer devices robots in general in B25J
• CPC Class Codes: H01L 21/68742 characterised by a lifting arrangement, e.g. lift pins

Abstract

In a method for plasma ashing a resist film coated on a substrate, the temperature of the substrate is controlled initially at temperatures below that at which explosion of the resist film occurs until a surface portion of a resist film has been removed. Thereafter, the substrate temperature is increased to remove the remaining portions of the resist film. An apparatus for conducting the method includes a plurality of supports, which may be movably disposed within a vacuum treatment chamber for moving the substrate away from a source of heat and for moving the substrate into contact with the heating source.

Claims

1. A plasma ashing method for removing a resist film on a coated substrate comprising the steps of:

placing the substrate coated with said resist film in a vacuum chamber;

simultaneously ashing the resist film by an oxygen plasma while heating the substrate to remove said resist film;

initially maintaining a temperature of the substrate during said step of ashing at a temperature below that at which explosion of said resist film occurs until a surface portion of said resist film has been removed; and

thereafter increasing the temperature during said step of ashing to remove remaining portions of said resist film.

2. A plasma ashing apparatus comprising:

a vacuum treatment chamber for receiving a substrate coated with a resist film;

a vacuum exhaust port in open communication with the vacuum treatment chamber;

heating means located within the vacuum treatment chamber for heating the substrate;

a plurality of pins for supporting a rear surface of the substrate a distance away from the heating means;

introducing port means for introducing reactive gas radicals to said vacuum treatment chamber, the reactive gas radicals being formed from an oxygen-containing gas and being capable of removing the resist film from the substrate by ashing; and

means for generating reactive gas radicals to be introduced into said vacuum treatment chamber with said introducing port means.

3. A plasma ashing apparatus according to claim 2 wherein said plurality of pins are movably disposed between an advanced position and a retracted position, the advanced position being such that a distance is formed between a rear surface of the substrate and said heating means, the retracted position being such that the rear surface of the substrate contacts said heating means.

4. A plasma ashing apparatus comprising:

a vacuum treatment chamber for receiving a substrate coated with a resist film;

a vacuum exhaust port in open communication with said vacuum treatment chamber;

heating means located within said vacuum treatment chamber for heating the substrate;

means for introducing reaction gas radicals to said vacuum treatment chamber, the reaction gas radicals formed from an oxygen-containing gas and being capable of removing the resist film from the substrate by ashing;

means associated with said introducing means for generating the reaction gas radicals;

a front electrode disposed in front of the substrate, in an opposed relation thereto, at a distance capable of generating a plasma;

a rear electrode disposed on a rear side of the substrate in an opposed relationship thereto, said rear electrode being disposed at a narrow distance relative to the rear side of the substrate whereby a plasma is incapable of being generated; and

a high-frequency power source and a ground, said front and rear electrodes selectively connected to said power source and ground.

5. A plasma ashing apparatus according to claim 4, wherein said front electrode is a plate having a plurality of perforations.

6. A plasma ashing apparatus comprising:

a vacuum treatment chamber for receiving a substrate coated with a photo resist film on a surface thereof, said vacuum treatment chamber having therein heating means to heat said substrate;

a reactive gas introduction pipe for conveying a reactive gas to said vacuum treatment chamber and having, in an intermediate portion of said reactive gas introduction pipe, a plasma applicator to generate plasma of the reactive gas; and

a vacuum exhaust pipe having, at a first end, a vacuum exhaust port in open communication with said vacuum treatment chamber and having a second end connected to a vacuum pump, an inside of said vacuum treatment chamber being divided into two chambers by a shower plate,

the shower plate including a perforated plate provided along a surface of the substrate, and further the shower plate having defined thereon a plurality of small holes on a majority of its surface and a hole of larger diameter relative to the plurality of small holes, located on the surface of the shower plate in a position which faces the surface of the substrate at a central portion thereof,

said vacuum exhaust pipe being connected to a first side of the two chambers in which the substrate is located, and

said reactive gas introduction pipe being connected to a second side of the two chambers whereby reactive gas introduced from said reactive gas introduction pipe, in an ionized condition, is caused to flow along a surface of the substrate to ash the resist film on the surface of the substrate.

7. A plasma ashing apparatus according to claim 6, wherein said vacuum exhaust port opens into a position facing a rear surface of the substrate.

8. A plasma ashing apparatus according to claim 6 further comprising:

a thermometer in association with said vacuum treatment chamber to measure a temperature of the surface of the substrate through the large diameter hole in the shower plate.