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High density data storage using stacked wafers

  • US 5,229,647 A
  • Filed: 09/21/1992
  • Issued: 07/20/1993
  • Est. Priority Date: 03/27/1991
  • Status: Expired due to Term
First Claim
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1. A stacked wafer device comprising:

  • (a) a plurality of semiconductor wafers arranged in a stack;

    (b) each wafer having a plurality of connection pads formed on the upper face of the wafer, the connection pads made of a first metallic material;

    (c) each wafer further having a plurality through-holes axially aligned with the connection pads, each through-hole extending through the wafer to an opposite face of the wafer;

    (d) each wafer further including a plurality of solid bumps of a second metallic material, each bump engaging and making electrical contact with a connection pad formed on the wafer at an interface and extending through the through-hole of another wafer to make electrical contact with a connection pad formed on the other wafer;

    (e) the first and second metallic materials selected such that the metallic materials do not form a rigid mechanical bond at the interface between the connection pad and the bump.

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