Method of making a power VFET device using a p+ carbon doped gate layer
First Claim
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1. A method of forming a vertical transistor device comprising:
- a. forming an n-type source layer;
b. forming a p+ carbon doped gate layer over said source layer;
c. forming a gate structure from said gate layer; and
d. forming a n-type drain layer over said gate structure.
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Abstract
This is a method of forming a vertical transistor device. The method comprises: forming a n-type source layer 12; forming a p+ carbon doped gate layer 14; forming a gate structure from the gate layer; and forming a n-type drain layer 16 over the gate structure to provide a buried carbon doped gate structure. The buried carbon doped gate structure provides a very small device with favorable on-resistance, junction capacitance, gate resistance, and gate driving voltage. Other devices and methods are also disclosed.
106 Citations
14 Claims
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1. A method of forming a vertical transistor device comprising:
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a. forming an n-type source layer; b. forming a p+ carbon doped gate layer over said source layer; c. forming a gate structure from said gate layer; and d. forming a n-type drain layer over said gate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a vertical transistor device comprising:
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a. forming an n-type source layer over a n+ substrate; b. forming a p+ carbon doped gate layer over said source layer; c. forming a gate structure from said gate layer; d. forming a n-type drain layer over said gate structure; e. forming a n+ cap layer over said drain layer; f. implanting a p+ dopant to contact said gate structure; g. forming a p-ohmic contact to said gate structure; h. forming an n-ohmic source contact; and i. forming an n-ohmic drain contact. - View Dependent Claims (10, 11, 12, 13, 14)
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Specification