Method of forming conductive material selectively
First Claim
1. A method of selectively forming conductive material on a substrate, said method comprising the steps of:
- forming a first dielectric film layer on the substrate;
forming a second dielectric film layer as an upper most layer on top of said first dielectric film layer using a beam-assisted deposition method;
selectively forming a via hole through said first dielectric film layer and said second dielectric film layer; and
selectively depositing a conductive material film in said via hole whereby said conductive material film does not substantially grow on said first dielectric film layer and said second dielectric film layer.
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Abstract
The CVD W deposition process is observed while changing the substrate temperature, with IR thermometer measurement. The temperature indicated changes with emissivity depending on the surface morphology and materials.
As the response time of this measurement is short, it is possible to perform in situ observation of changing surface morphology. This is a valid method to evaluate the deposition process. On a silicon substrate, the indicated temperature increases rapidly as soon as the gas flow starts, i.e. as soon as tungsten is deposited on the substrate. The indicated temperature increases in two steps. One is for silicon reduction and the other is for hydrogen reduction. Furthermore, it is found that the start of deposition on insulators is delayed. This phenomenon is related to the selective deposition. The thickness of deposited tungsten films can on insulatars be estimated by measuring the delay time and the thickness of tungsten on silicon.
The reaction process for silicon and hydrogen reduction is evaluated by this method. We found that within 10 seconds the silicon reduction was finished and the hydrogen reduction started. We also found that optimum silicon reduction enhances the selectivity.
36 Citations
15 Claims
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1. A method of selectively forming conductive material on a substrate, said method comprising the steps of:
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forming a first dielectric film layer on the substrate; forming a second dielectric film layer as an upper most layer on top of said first dielectric film layer using a beam-assisted deposition method; selectively forming a via hole through said first dielectric film layer and said second dielectric film layer; and selectively depositing a conductive material film in said via hole whereby said conductive material film does not substantially grow on said first dielectric film layer and said second dielectric film layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification