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Semiconductor sensor with piezoresistors and improved electrostatic structures

  • US 5,231,301 A
  • Filed: 10/02/1991
  • Issued: 07/27/1993
  • Est. Priority Date: 10/02/1991
  • Status: Expired due to Term
First Claim
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1. An electromechanical sensor comprising:

  • an n type semiconductor region which defines a thin flexible member adjacent to a thicker more rigid base portion;

    at least one piezoresistor;

    at least one n+ region formed in the base portion;

    a first insulative layer which overlays said piezoresistor and which extends between said piezoresistor and said first n+ doped region;

    a guard layer formed from an electrically conductive material having a coefficient of thermal expansion in the range of approximately (0 to 15 ppm/°

    C) and which is disposed over at least a portion of said first insulative layer so as to overlay said at least one piezoresistor; and

    a bias contact disposed in the base portion which electrically interconnects said n+ region and said guard layer.

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