Semiconductor sensor with piezoresistors and improved electrostatic structures

• US 5,231,301 A
• Filed: 10/02/1991
• Issued: 07/27/1993
• Est. Priority Date: 10/02/1991
• Status: Expired due to Term

• Current Assignee: GE NovaSensor, Inc. (Baker Hughes Company), GE Infrastructure Sensing Incorporated (General Electric Company)
• Original Assignee: Lucas Novasensor
• Inventors: Peterson, Kurt E., Christel, Lee A.
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Crane, Sara W.
• Application Number:
  US07/771,301
• Time in Patent Office: 664 Days
• Field of Search: 257/254, 257/364, 257/412, 257/415, 257/417, 257/418, 257/419, 257/420, 257/489, 257/536, 257/537, 257/538, 73/721, 73/727, 73/516 R, 73/517 R, 73/517 AV
• US Class Current: 257/419
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm

Abstract

An electromechanical sensor is provided which comprises an n-type semiconductor region which defines a flexible member surrounded by a thicker base portion; at least one piezoresistor formed in the semiconductor region; an n+ region formed in the thicker base portion; a first insulative layer which overlays the piezoresistor and which extends at least from the piezoresistor to the first n+ doped region; a guard layer which overlays at least a portion of the first insulative layer such that the guard layer overlays the piezoresistor and extends at least from the piezoresistor to a point adjacent to the n+ region; and a first bias contact which electrically interconnects the n+ region and the guard layer.

Claims

1. An electromechanical sensor comprising:

an n type semiconductor region which defines a thin flexible member adjacent to a thicker more rigid base portion;

at least one piezoresistor;

at least one n+ region formed in the base portion;

a first insulative layer which overlays said piezoresistor and which extends between said piezoresistor and said first n+ doped region;

a guard layer formed from an electrically conductive material having a coefficient of thermal expansion in the range of approximately (0 to 15 ppm/°

C) and which is disposed over at least a portion of said first insulative layer so as to overlay said at least one piezoresistor; and

a bias contact disposed in the base portion which electrically interconnects said n+ region and said guard layer.

2. The sensor of claim 1 wherein said guard layer is formed from SiCr.

3. The sensor of claim 1 wherein said guard layer is formed from polysilicon.

4. The sensor of claim 1 wherein said guard layer is formed from molybdenum.

5. The sensor of claim 1 wherein said guard layer is formed from a material selected from the group consisting of silicon, titanium, chromium, nickel and conducting oxides, nitrides and alloys of such materials.

6. The sensor of claim 1 wherein said at least one piezoresistor is formed in the flexible member.

7. The sensor of claim 1 wherein said at least one piezoresistor includes a first end portion and a second end portion and further including:

at least two circuit contacts disposed in the base portion; and

at least two first electrical interconnections formed in the semiconductor region, one of said first interconnections interconnecting said first end portion and one of said circuit contacts, another of said first interconnections interconnecting said second end portion and another of said circuit contacts;

wherein said guard region overlays said at least two first interconnections.

8. The sensor of claim 1 wherein said at least one piezoresistor includes at least two elongated sections aligned in parallel and further including:

at least two circuit contacts disposed in the base portion; and

at least two first electrical interconnections formed in the semiconductor region, one of said first interconnections electrically interconnecting one of said circuit contacts and one of said sections, another of said first interconnections electrically interconnecting another of said circuit contacts and another of said sections; and

a second electrical interconnection formed in the semiconductor region, said second interconnection electrically interconnecting said at least two elongated sections;

wherein said guard region overlays said at least two first interconnections and said second interconnection.

9. The sensor of claim 7 or 8 wherein said guard layer does not make electrical contact with either of said at least two circuit contacts.

10. The sensor of claim 1 wherein said at least one piezoresistor includes at least two elongated sections aligned in parallel and further including:

at least two circuit contacts disposed in the base portion; and

at least two first electrical interconnections formed in the semiconductor region, one of said interconnections electrically interconnecting one of said circuit and contacts and one of said sections, another of said interconnections electrically interconnecting another of said circuit contacts and another of said sections; and

at least one second electrical interconnection formed in the semiconductor region, said second interconnection electrically interconnecting said at least two elongated sections;

wherein said guard region overlays said at least two first interconnections and said at least one second interconnection; and

wherein said piezoresistor is disposed substantially in said flexible member; and

wherein said guard layer overlays only potions of the flexible member occupied by said at least two elongated sections and said at least two interconnections and said at least one second interconnection.

11. The sensor of claim 1 wherein said first insulative layer overlays substantially the entire flexible member.

12. The sensor of claim 1 wherein said first insulative layer overlays substantially the entire semiconductor region.

13. The sensor of claim 1 and further including a second insulative layer which overlays the base portion.

14. The sensor of claim 1 wherein said flexible portion includes a diaphragm surrounded by said base portion.

15. An electromechanical sensor comprising:

an n-type silicon region which defines a flexible member adjacent to a more rigid base portion;

at least one piezoresistor formed in the silicon region;

at least one first n+ region formed in the base portion;

at least one circuit contact disposed in the base portion; and

at least one first electrical interconnection interconnecting said at least one circuit contact and said at least one piezoresistor;

a first insulative layer which overlays said at least one piezoresistor and said at least one first interconnection and which extends between said at least one piezoresistor and said first n+ region; and

an SiCr layer which overlays at least a portion of said first insulative layer such that said SiCr layer overlays said at least one piezoresistor and overlays said at least one first interconnection, said SiCr layer also extending between said piezoresistor and a point adjacent to said first n+ doped region; and

a bias contact disposed in the base portion and which electrically interconnects said n+ region and said SiCr layer.

16. The sensor of claim 15,

wherein said SiCr layer overlays substantially only areas of the flexible member occupied by said at least one piezoresistor and by said at least one first interconnection and between said at least one piezoresistor and said at least one n+ region.

17. The sensor of claim 15 wherein said first insulative layer overlays substantially the entire flexible member.

18. The sensor of claim 17 and further including a second insulative layer which overlays substantially only the base portion such that said first insulative layer is interposed between said first insulative layer and the n-type silicon region.

19. An electromechanical sensor comprising:

an n-type silicon region which defines a thin flexible member adjacent to a thicker more rigid base portion;

a Wheatstone bridge circuit formed in the silicon region and including at least four circuit elements, each circuit element including,

a respective piezoresistor,

a respective n+ region formed in the base portion,

a respective guard layer formed from an electrically conductive material having a coefficient of thermal expansion in the range of approximately (0 to 15 ppm/°

C), and

a respective bias contact which electrically interconnects the respective n+ region and the respective guard layer; and

a first insulative layer disposed between the respective guard layers and the respective piezoresistors;

wherein said respective guard layers are spaced apart from each other.

20. The sensor of claim 19 wherein said respective guard layers are formed from SiCr.

21. The sensor of claim 19 wherein said respective guard layers are formed from polysilicon.

22. The sensor of claim 19 wherein said respective guard layers are formed from molybdenum.

23. The sensor of claim 19 wherein said respective guard layers are formed from a material selected from the group consisting of silicon, titanium, chromium, nickel and conducting oxides, nitrides and alloys of such materials.