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Process for thin film interconnect

  • US 5,231,751 A
  • Filed: 10/29/1991
  • Issued: 08/03/1993
  • Est. Priority Date: 10/29/1991
  • Status: Expired due to Fees
First Claim
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1. A process for the fabrication of a compensator interconnect used in forming a multilayer thin-film structure, said process comprising the steps of,a) forming at least one via hole in at least one metal foil,b) securing said at least one metal foil having said at least one via hole to a partially cured first polymer layer that is formed on a rigid substrate,c) covering the exposed surfaces of said metal foil with at least one second polymer, such that said second polymer covers the exposed surfaces of said metal foil and completely fills said at least one via hole,d) subjecting the structure of step c) to a temperature of at least 300 degrees C., to cure said first and said second polymer,e) forming at least one via hole through said at least one polymer filled via, such that said via hole extends through the entire thickness of said polymer,f) filling said at least one via hole with at least one electrically conductive material to form a via metal stud, andg) removing said rigid substrate to form said compensator interconnect.

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