Process for thin film interconnect
First Claim
1. A process for the fabrication of a compensator interconnect used in forming a multilayer thin-film structure, said process comprising the steps of,a) forming at least one via hole in at least one metal foil,b) securing said at least one metal foil having said at least one via hole to a partially cured first polymer layer that is formed on a rigid substrate,c) covering the exposed surfaces of said metal foil with at least one second polymer, such that said second polymer covers the exposed surfaces of said metal foil and completely fills said at least one via hole,d) subjecting the structure of step c) to a temperature of at least 300 degrees C., to cure said first and said second polymer,e) forming at least one via hole through said at least one polymer filled via, such that said via hole extends through the entire thickness of said polymer,f) filling said at least one via hole with at least one electrically conductive material to form a via metal stud, andg) removing said rigid substrate to form said compensator interconnect.
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Accused Products
Abstract
This invention relates generally to a structure and process for thin film interconnect, and more particularly to a structure and process for a multilayer thin film interconnect structure with improved dimensional stability and electrical performance. The invention further relates to a process of fabrication of the multilayer thin film structures. The individual thin film structure is termed a compensator, and functions as both a ground/reference plane and as a stabilizing entity with regard to dimensional integrity. The compensator is comprised primarily of a metal sheet having a metallized via pattern and high-temperature stable polymer as an insulator.
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Citations
34 Claims
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1. A process for the fabrication of a compensator interconnect used in forming a multilayer thin-film structure, said process comprising the steps of,
a) forming at least one via hole in at least one metal foil, b) securing said at least one metal foil having said at least one via hole to a partially cured first polymer layer that is formed on a rigid substrate, c) covering the exposed surfaces of said metal foil with at least one second polymer, such that said second polymer covers the exposed surfaces of said metal foil and completely fills said at least one via hole, d) subjecting the structure of step c) to a temperature of at least 300 degrees C., to cure said first and said second polymer, e) forming at least one via hole through said at least one polymer filled via, such that said via hole extends through the entire thickness of said polymer, f) filling said at least one via hole with at least one electrically conductive material to form a via metal stud, and g) removing said rigid substrate to form said compensator interconnect.
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18. A process for the fabrication of a compensator interconnect used in forming a multilayer thin-film structure, said process comprising the steps of,
a) forming at least one via hole in at least one metal foil, b) securing said at least one metal foil having said at least one via hole to a partially cured first polymer layer that is formed on a rigid substrate, c) covering the exposed surfaces of said metal foil with at least one second polymer, such that said second polymer covers the exposed surfaces of said metal foil and completely fills said at least one via hole, d) subjecting the structure of step c) to a temperature of at least 300 degrees C., to cure said first and said second polymer, e) forming at least one via hole through said at least one polymer filled via, such that said via hole extends through the entire thickness of said polymer, f) forming at least one blind via hole through said polymer such that said blind via hole exposes a portion of said metal foil, g) filling said at least one via hole and said at least one blind via hole with at least one electrically conductive material to form a via metal stud and a blind via metal stud, and h) removing said rigid substrate to form said compensator interconnect.
Specification