Spacers for field emission display fabricated via self-aligned high energy ablation

• US 5,232,549 A
• Filed: 04/14/1992
• Issued: 08/03/1993
• Est. Priority Date: 04/14/1992
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Lowrey, Tyler A., Yu, Chris C., Doan, Trung T., Rolfson, J. Brett, Cathey, David A.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/869,348
• Time in Patent Office: 476 Days
• Field of Search: 156/629, 156/633, 156/643, 156/645, 156/655, 156/657, 156/659.1, 156/668, 313/309, 313/351, 445/24, 445/25, 219/121.68, 219/121.69
• US Class Current: 216/62
• CPC Class Codes: G03F 7/0007 Filters, e.g. additive colour filters; Components for display devices
• CPC Class Codes: H01J 2329/8625 Spacing members
• CPC Class Codes: H01J 2329/864 characterised by the material
• CPC Class Codes: H01J 31/123 Flat display tubes
• CPC Class Codes: H01J 9/185 of flat panel display devices, e.g. by using spacers
• CPC Class Codes: H01J 9/242 Spacers between faceplate and backplate

Abstract

Fabrication of spacer supports for use in flat panel displays through a process which involves 1) depositing an insulating material on an electrode plate, 2) optionally, patterning a reflective material superjacent the insulating material, 3) irradiating the electrode plate, and thereby removing the exposed insulating material, 4) optionally, removing the reflective material, and thereby exposing the remaining insulative material which will serve as the spacer supports, after which the plate can be aligned with a complementary electrode plate, and a vacuum formed therebetween.

Claims

1. A process for the formation of interelectrode support structures, said process comprising the following steps:

depositing a first material on a substrate, said substrate being disposed on a first electrode plate;

selectively exposing said first material to radiant energy to define the support structures;

attaching and sealing said first electrode plate to a second electrode plate; and

creating a vacuum between said first electrode plate and said second electrode plate.

2. The process according to claim 1, wherein said radiant energy ablates said first material upon which said radiant energy impinges.

3. The process according to claim 2, further comprising the step of depositing a radiation reflective layer superjacent said first material, said radiation reflective layer having a pattern, whereby said radiation reflective layer reflects said radiant energy.

4. The process according to claim 3, further comprising the step of removing said radiation reflective layer subsequent to exposing said first material to said radiant energy.

5. The process according to claim 4, wherein said radiation reflective layer has a depth of approximately 0.5 to 3 microns.

6. The process according to claim 2, wherein said radiant energy is directed toward said first material in a preselected plan.

7. The process according to claim 2, wherein said first material is deposited in sites where the support structures are to be formed.

8. The process according to claim 7, wherein said radiant energy is selectively directed to ablate said first material proximate to said sites where the support structures are to be formed.

9. The process according to claim 2, wherein said first material has an approximate depth of 50 to 1000 microns.

10. The process according to claim 9, wherein said radiant energy has a wavelength, said wavelength being far-ultraviolet.

11. The process according to claim 10, wherein said radiant energy is pulsed from a laser.

12. The process according to claim 11, wherein

said first material is at least one of a dielectric, a chemical polymer, and an insulator, and

said chemical polymer is at least one of polyimide, and silicon nitride.

13. The process according to claim 12, further comprising the steps of:

applying a second material through said first material where said radiant energy defined the support structures, said second material being selectively etchable with respect to said first material, wherein said first material functions as a mold and said second material forms said support structures;

planarizing said second material equal to said depth of said first material, wherein said second material is planarized by chemical mechanical polishing (CMP); and

removing said first material, thereby exposing said support structures.

21. The process according to claim 1, further comprising the step of:

removing said substrate around the support structures, thereby exposing said first electrode plate.

14. A process for the formation of interelectrode support structures, said process comprising the following steps:

applying a first material to a substrate, said substrate being disposed on a first electrode plate;

wherein said first material is used to form said support structures;

applying a radiation reflective material superjacent said support forming material thereby defining a pattern, whereby said radiation reflective material reflects energy at a predetermined wavelength;

exposing said first material to laser energy at said predetermined wavelength;

removing said radiation reflective layer;

attaching and sealing said first electrode plate to a second electrode plate; and

creating a vacuum between said first electrode plate and said second electrode plate.

15. The process according to claim 14, wherein said laser energy wavelength is far-ultraviolet.

16. The process according to claim 15, wherein said laser energy ablates said support forming material upon which said laser energy impinges.

17. The process according to claim 16, wherein a highly thermally conductive layer is deposited superjacent said highly reflective layer.

18. The process according to claim 17, wherein said highly thermally conductive layer is aluminum nitride.

22. The process according to claim 14, further comprising the step of:

removing said substrate around said support structures, thereby exposing said first electrode plate.

19. An interelectrode support structure, formed by:

depositing a first material on an electrode plate, said first material being used to form said support structures;

selectively depositing a highly reflective material superjacent said first material, said highly reflective material defining a cross-section of said support structures, said cross-section being less than 50 μ

m by 50 μ

m;

exposing said electrode plate to pulses of radiant energy, said radiant energy reflecting off said highly reflective material and ablating said first material upon which said highly reflective material was not deposited; and

removing said highly reflective material, thereby exposing the first material which forms said support structures.

20. The interelectrode support structure of claim 19, wherein said radiant energy has a wavelength, said wavelength being approximately 193 nm.