Method for production of bonded wafer

• US 5,232,870 A
• Filed: 09/04/1991
• Issued: 08/03/1993
• Est. Priority Date: 09/10/1990
• Status: Expired due to Term

• Current Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Original Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Inventors: Ito, Tatsuo, Nakazato, Yasuaki
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US07/754,767
• Time in Patent Office: 699 Days
• Field of Search: 148/DIG. 12, 148/DIG. 135, 437/86, 437/225, 437/974, 437/173
• US Class Current: 438/455
• CPC Class Codes: H01L 21/02233 of the semiconductor substrate or a semiconductor layer
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/31654 of semiconductor materials, e.g. the body itself
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: Y10S 148/012 Bonding, e.g. electrostatic for strain gauges
• CPC Class Codes: Y10S 438/974 Substrate surface preparation

Abstract

A bonded wafer enjoying high strength of bonding of component wafers thereof is produced by a method which comprises causing the surfaces for mutual attachment of two semiconductor wafers to be irradiated with an ultraviolet light in an atmosphere of oxygen immediately before the two semiconductor wafers are joined to each other. One of the two semiconductor wafers to be used for the bonded wafer optionally has an oxide film formed on one surface thereof. One of the component wafers of the bonded wafer is optionally polished until the component wafer is reduced to a thin film.

Claims

1. A method for the production of a bonded semiconductor wafer which is characterized by the fact that in the process for production of said bonded wafer, the surfaces of two semiconductor wafers which are to be bonded are washed with a fluid which leaves defiling substances on said surfaces and said surfaces are irradiated with an ultraviolet light in an atmosphere of oxygen before said two semiconductor wafers are bonded.

3. A method for the production of a bonded wafer in accordance with claim 1 wherein said bonded wafer is polished until a polished surface is removed to form a thin semiconductor film above the bonding surface.

7. The method for production of a bonded semiconductor wafer in accordance with claim 1, wherein said fluid is selected from the group consisting of NH₃ /H₂ O₂, H₂ SO₄ /H₂ O₂, HCl/H₂ O₂, HF, and i-C₃ H₇ OH.

2. A method for the production of a bonded semiconductor wafer, wherein at least one wafer has an oxide film formed on one surface thereof and, the surface of said one semiconductor wafer and a second semiconductor wafer intended for mutual bonding are washed with a fluid which leaves defiling substance on said surfaces and said surfaces are irradiated with an ultraviolet light in an atmosphere of oxygen.

6. A method for the production of a bonded semiconductor wafer in accordance with claim 2, wherein said bonded wafer is polished until a polished surface is removed to form a thin semiconductor film above the bonding surface.

8. The method for production of a bonded semiconductor wafer in accordance with claim 2, wherein said fluid is selected from the group consisting of NH₃ /H₂ O₂, H₂ SO₄ /H₂ O₂, HCl/H₂ O₂, HF, and i-C₃ H₇ OH.

4. A method of producing semiconductor bonded wafers by joining principal surfaces of two semiconductor wafers together, said method comprising:

(a) smoothing the principal surfaces of said two wafers by mirror polishing;

(b) washing with a fluid which leaves defiling substances on said surfaces;

(c) irradiating the mirror polished surfaces of said two wafers with a ultraviolet light in the presence of oxygen;

(d) directly contacting the mirror polished surfaces of said two wafers to each other during irradiating; and

(e) bonding said surfaces giving a thermal treatment to said wafers while being held in contact at a temperature of no lower than 1100°

C. at least for two hours.

9. The method for production of a bonded semiconductor wafer in accordance with claim 4, wherein said fluid is selected from the group consisting of NH₃ /H₂ O₂, H₂ SO₄ /H₂ O₂, HCl/H₂ O₂, HF, and i-C₃ H₇ OH.

5. A method of producing semiconductor bonded wafers by joining principal surfaces of first and second semiconductor wafers together, said method comprising:

(a) smoothing the principal surfaces of said first and second wafers by mirror polishing;

first mirror polished wafer in an oxidizing atmosphere;

(b) thermal oxidizing the principal surface of said first mirror polished wafer in an oxidizing atmosphere;

(c) washing with a fluid which leaves defiling substances on said surfaces;

(d) irradiating the oxidized principal surface of said first wafer and the mirror polished principal surface of said second wafer with a ultraviolet light in the presence of oxygen;

(e) directly contacting the thermal oxidized surface of said first wafer and the mirror polished surface of said second wafer to each other during irradiating; and

(f) giving a thermal treatment to said wafers while being held in contact at a temperature no lower than 800°

C.

10. The method for production of a bonded semiconductor wafer in accordance with claim 5, wherein said fluid is selected from the group consisting of NH₃ /H₂ O₂, H₂ SO₄ /H₂ O₂, HCl/H₂ O₂, HF, and i-C₃ H₇ OH.