Method and apparatus for improving planarity of chemical-mechanical planarization operations

• US 5,232,875 A
• Filed: 10/15/1992
• Issued: 08/03/1993
• Est. Priority Date: 10/15/1992
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Micron Technology, Inc.
• Inventors: Fox, Angus C., Sandhu, Gurtej S., Doan, Trung T., Tuttle, Mark E., Stroupe, Hugh E.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): TSAI, H JEY
• Application Number:
  US07/961,565
• Time in Patent Office: 292 Days
• Field of Search: 437/225, 437/8, 437/946, 437/228, 156/636, 156/643, 156/627, 51/317, 51/131.1, 51/131.2, 51/131.3, 51/131.4, 51/131.5, 51/90, 51/33 R, 51/237 M, 51/237 R, 51/241 T, 51/132-133, 51/119
• US Class Current: 438/693
• CPC Class Codes: B24B 37/102 the workpieces or work carriers being able to rotate freely due to a frictional contact with the lapping tool
• CPC Class Codes: H01L 21/67023 for general liquid treatment, e.g. etching followed by cleaning
• CPC Class Codes: Y10S 438/959 Mechanical polishing of wafer

Abstract

A method and apparatus for improving planarity of chemical mechanical planarization of semiconductor wafers. The wafer is affixed to the planar surface of a wafer carrier. A planar platen, on which is mounted a polishing pad, is moved about in a plane parallel to the pad surface with either an orbital, fixed-direction vibratory, or random-direction vibratory motion. In one embodiment of the invention, pressure between the surface of the wafer to be polished and the moving polishing pad is generated by the force of gravity acting on at least the wafer and the carrier; in another it is provided by a mechanical force applied normal to the wafer surface. The polishing pad is wetted with a slurry having abrasive particles suspended in a liquid which may be chemically reactive with respect to at least one material on the wafer.

Claims

1. A chemical mechanical planarization apparatus comprising

a platen having a horizontal, planar upper surface;

a slurry-wetted, uniformly-thick polishing pad affixed to said upper surface;

a wafer carrier having a lower planar surface to which one side of a semiconductor wafer is removably attachable, the other side of said wafer being disposed against said slurry-wetted polishing pad; and

means for imparting non-rotational motion to said platen upper surface, said motion being parallel to that upper surface, and also providing every point on that upper surface with identical during same time interval.

2. The apparatus of claim 1, wherein said motion imparted to said upper surface is random-directed vibratory motion.

3. The apparatus of claim 1, wherein said motion imparted to said upper surface is fixed-direction vibratory motion.

4. The apparatus of claim 1, wherein said motion imparted to said upper surface is ellipsoid orbital motion.

5. The apparatus of claim 4, wherein the distance between the loci of the ellipse, which defines said ellipsoid orbital motion, is zero.

6. The apparatus of claim 1, wherein said wafer is pressed against the polishing pad by the effect of gravity on at least the wafer, itself, and the wafer carrier.

7. The apparatus of claim 1, wherein the wafer is pressed against the polishing pad by mechanical force.

8. The apparatus of claim 1, which further comprises a uniformly-thick, resilient backing pad which is placed between the wafer and said lower planar surface, said resilient backing pad providing frictional attachment of the wafer to the wafer carrier.

9. The apparatus of claim 7, wherein the coefficients of friction between the backing pad and the wafer, on one side, and the carrier surface, on the other, are at least 1.5 times that of the coefficient of friction between the wafer and the slurry-wetted polishing pad.

10. The apparatus of claim 1, wherein said polishing pad has a porous surface.

11. The apparatus of claim 1, wherein said polishing pad is equipped with perforations which extend from a lower surface thereof to an upper surface thereof.

12. The apparatus of claim 11, wherein slurry is supplied from a supply to the via a network of channels in the upper surface of the platen.

13. The apparatus of claim 1, wherein the platen is equipped with a barrier wall which surrounds the polishing pad and retains slurry thereon.

14. The apparatus of claim 13, wherein said barrier wall prevents the wafer carrier and an attached wafer from wandering beyond the limits of the platen.

15. The apparatus of claim 14, wherein said wafer carrier is equipped with a resilient bumper, which surrounds the carrier and cushions impacts between the carrier and the barrier wall.

16. The apparatus of claim 14, wherein said barrier wall is equipped with a resilient cushion, which cushions impacts between the carrier and the barrier wall.

17. A method for performing a chemical-mechanical planarization operation on a wafer having front-side and back-side planar surfaces, said method comprising the step of disposing the front-side surface against an abrasive planar surface, said abrasive planar surface being moved non-rotationally, and in a man every point on said front-side surface experiences both virtually identical pressure against said abrasive planar and identical relative motion, with respect to said abrasive planar surface, during the same time interval.

18. The method of claim 17, wherein said motion is random-direction vibratory motion.

19. The method of claim 17, wherein said motion is fixed-direction vibratory motion.

20. The method of claim 17, wherein said motion is ellipsoid orbital motion.

21. The method of claim 20, wherein the distance between the loci of the ellipse, which defines the ellipsoid orbital motion, is zero.

22. The method of claim 17, wherein said abrasive planar surface comprises a polishing pad wetted with a slurry having abrasive particles suspended in a liquid.

23. The method of claim 22, wherein said liquid is chemically-reactive with respect to at least one material on the front-side of said wafer.

24. The method of claim 22, wherein said abrasive planar surface is horizontal, said wafer is attached to a wafer carrier, and the pressure between said front-side surface and said abrasive planar surface is generated by the force of gravity acting on at least said wafer and said carrier.

25. The method of claim 22, wherein said abrasive planar surface is horizontal, said wafer is attached to a wafer carrier, and the pressure between said front-side surface and said abrasive planar surface is variably and mechanically applied.