Buffered quartz crystal

• US 5,233,261 A
• Filed: 12/23/1991
• Issued: 08/03/1993
• Est. Priority Date: 12/23/1991
• Status: Expired due to Term

• Current Assignee: INFICON GmbH (Inficon Holding AG)
• Original Assignee: Leybold Inficon Incorporated (Inficon Holding AG)
• Inventors: Wajid, Abdul
• Primary Examiner(s): Stephan, Steven L.
• Assistant Examiner(s): LABALLE, CLAYTON E
• Application Number:
  US07/812,685
• Time in Patent Office: 589 Days
• Field of Search: 310/312, 310/328, 310/361, 310/364, 73/508
• US Class Current: 310/364
• CPC Class Codes: H03H 9/19 consisting of quartz
• CPC Class Codes: H10N 30/06 Forming electrodes or interconnections, e.g. leads or terminals

Abstract

An AT-cut quartz crystal for a quartz crystal microbalance has a buffer layer sandwiched between an adhesion layer and an electrode layer on the front or deposition side of the crystal. The buffer layer can be a zinc layer of 6000 Å sandwiched between a titanium or chromium adhesion layer of 100 to 160 Å and a gold, silver, or aluminum outer electrode layer of about 2000 Å. The zinc layer has a relatively low bulk modulus, and absorbs stress imposed by the deposited layer. The buffer layer prolongs useful crystal life, particularly when depositing dielectric materials. The crystal should have a modest surface roughness as keying-in structure.

Claims

1. A piezoelectric crystal for measurement of the deposition of a film of material, including a crystal layer having front and back surfaces, a back electrode deposited on the back surface of the crystal layer, and a front metallic electrode deposited on the front surface of the crystal layer and upon which said film of material accumulates during a deposition process to change the natural oscillation frequency of the crystal, wherein said front electrode includes an adhesion layer deposited against the front surface of the crystal layer, a compliant buffer layer deposited on the adhesion layer, and a conductive metallic electrode layer formed of gold or silver deposited on the buffer layer;

said buffer layer being formed of an element having the following properties;

a suitably low bulk modulus and a suitably low Young'"'"'s modulus;

the layer being

of a suitable thickness to absorb strain between the electrode layer and the film of material being deposited thereon;

a good adhesion for the gold or silver of the conductive electrode layer;

a suitably high thermal conductivity; and

a low acoustic damping characteristic to avoid undue damping of vibrations in the crystal;

so as to prevent interfacial stresses during the deposition process from causing early catastrophic crystal failure, and thus to prolong the useful life of the piezoelectric crystal when used as a crystal microbalance in a film deposition process.

2. A piezoelectric crystal for measurement of the deposition of a film of material including a crystal layer having front and back surfaces, a back electrode deposited on the back surface of the crystal layer, and a front metallic electrode deposited on the front surface of the crystal layer and upon which said film of material accumulates during a deposition process to change the natural oscillation frequency of the crystal, wherein said front electrode includes an adhesion layer deposited against the front surface of the crystal layer, a compliant buffer layer deposited on the adhesion layer, and a conductive metallic electrode layer deposited on the buffer layer;

said buffer layer having a suitably low bulk modulus and being of suitable thickness to absorb strain between the electrode layer and the film of material deposited thereon without undue acoustical damping of vibrations in the crystal, so as to prevent interfacial stresses during the deposition process from causing early catastrophic crystal failure, and thus to prolong the useful life of the piezoelectric crystal when used as a crystal microbalance in a film deposition process;

wherein said buffer layer is selected from the group consisting of aluminum, bismuth, calcium, indium, lead, selenium, silver, tellurium, tin, cadmium and zinc.

3. The piezoelectric crystal of claim 2, wherein said buffer layer is selected from the group consisting of zinc, cadmium, lead, copper, calcium and alloys thereof.

4. The piezoelectric crystal of claim 2 wherein said buffer layer is zinc.

5. The piezoelectric crystal of claim 2 wherein said adhesion layer is selected from the group consisting of titanium and chromium.

6. The piezoelectric crystal of claim 2 wherein said adhesion layer is a deposit of titanium or chromium about 100 to 160 Å

thick;

said buffer layer is a deposit of zinc about 6000 Å

thick; and

said electrode layer is a deposit of silver about 2000 Å

thick.

7. The piezoelectric crystal of claim 2 wherein said crystal layer is an AT-cut quartz crystal.

8. The piezoelectric crystal of claim 7 wherein said crystal layer front surface has a suitable surface roughness with a mean deviation from true flatness of between about 15 to 25 microinches.

9. The piezoelectric crystal of claim 2 wherein said crystal natural oscillation frequency is from about four to about six megahertz.

10. A piezoelectric crystal for measurement of the deposition of a film of material, comprising a crystal layer of a piezoelectric crystal material having a front surface and a back surface, a back electrode deposited on the back surface of the crystal layer and a front metallic electrode including a layer of gold or silver deposited on the front surface of the crystal layer and upon which said film of material accumulates during a deposition process to change the natural oscillation frequency of the crystal, wherein said front surface of the crystal layer is provided with a surface roughness characterized by a mean deviation from true flatness on the order of about 15 to 25 microinches, and said front electrode includes a buffer layer of a conductive metallic material having the following properties:

a suitably low bulk modulus and a suitable Young'"'"'s modulus;

said buffer layer being

of sufficient thickness so that the buffer layer absorbs strain between the metallic electrode and the film of material being deposited thereon;

a good adhesion for the gold or silver of the conductive electrode layer;

a suitably high thermal conductivity; and

a low acoustic damping characteristic to prevent undue damping of vibrations in the crystal;

so as to prevent interfacial stresses during the deposition process from causing early catastrophic failure, and thus to prolong the useful life of the piezoelectric crystal when used as a crystal microbalance in a film deposition process.

11. A piezoelectric crystal for measurement of the deposition of a film of material, comprising a crystal layer of a piezoelectric crystal material having a front surface and a back surface, a back electrode deposited on the back surface of the crystal layer and a front metallic electrode deposited on the front surface of the crystal layer and upon which said film of material accumulates during a deposition process to change the natural oscillation frequency of the crystal, wherein said front surface of the crystal layer is provided with a surface roughness characterized by a mean deviation front true flatness on the order of about 15 to 25 microinches, and said front electrode includes a buffer layer of a conductive metallic material of suitably low bulk modulus and of sufficient thickness so that the buffer layer absorbs strain between the electrode and the film of material deposited thereon without undue damping of vibrations in the crystal, so as to prevent interfacial stresses during the deposition process from causing early catastrophic crystal failure, and thus to prolong the useful life of the piezoelectric crystal when used as a crystal microbalance in a film deposition process;

wherein said buffer layer is selected from the group consisting of aluminum, bismuth, calcium, indium, lead, selenium, silver, tellurium, tin, cadmium and zinc.

12. The piezoelectric crystal of claim 11, wherein said buffer layer is selected from the group consisting of zinc, cadmium, lead, copper, calcium, and alloys thereof.

13. The piezoelectric crystal of claim 11 wherein said buffer layer is zinc.

14. The piezoelectric crystal of claim 11 wherein said front electrode includes a thin adhesive layer of titanium or chromium bonding said buffer layer to said crystal layer.

15. The piezoelectric crystal of claim 11, wherein said front electrode includes an overlayer of gold, silver, or aluminum.