Method of producing tungsten-titanium sputter targets and targets produced thereby

• US 5,234,487 A
• Filed: 04/15/1991
• Issued: 08/10/1993
• Est. Priority Date: 04/15/1991
• Status: Expired due to Term

• Current Assignee: Tosoh SMD, Inc. (Tosoh Corporation)
• Original Assignee: Tosoh SMD, Inc. (Tosoh Corporation)
• Inventors: Wickersham, Charles E. Jr., Mueller, John J.
• Primary Examiner(s): Walsh, Donald P.
• Assistant Examiner(s): MAI, NGOCLAN THI
• Application Number:
  US07/685,789
• Time in Patent Office: 848 Days
• Field of Search: 419/19, 419/23, 419/39, 419/49, 75/232, 75/235, 75/248, 420/430
• US Class Current: 75/248
• CPC Class Codes: B22F 1/09 Mixtures of metallic powders
• CPC Class Codes: B22F 1/12 Metallic powder containing non-metallic particles containing lubricating or binding agents or organic material B22F1/10
• CPC Class Codes: B22F 2999/00 Aspects linked to processes or compositions used in powder metallurgy
• CPC Class Codes: C22C 1/045 Alloys based on refractory metals
• CPC Class Codes: C22C 14/00 Alloys based on titanium
• CPC Class Codes: C22C 27/04 Alloys based on tungsten or molybdenum
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Abstract

Tungsten-titanium sputter targets of at least 95% theoretical density are provided with little or no β(Ti, W) phase constituent. Such targets will minimize troublesome particulate emissions during sputter coating conditions.

Claims

1. A method for preparing a tungsten-titanium sputter target having substantially no β

(Ti, W) phase present and exhibiting improvement in reduction of particulate emission upon sputtering, comprising;

(a) providing powders of said tungsten and titanium wherein said titanium powder is present in an amount of about 1-20 wt. % based on the total weight of said tungsten and titanium powders provided;

(b) compacting said powders at a pressure of from about 200 to 1,000 MPa; and

(c) heating said powders at a temperature from about 600°

-882°

C.

2. A method as recited in claim 1 wherein said steps (b) and (c) are conducted concurrently in a hot isostatic press.

3. A method as recited in claim 2 further comprising conducting said steps (b) and (c) concurrently for a period of from about 0.1-5 hours.

4. Method as recited in claim 1 comprising providing said titanium powder in a particle size range of between about 44-1,000 microns.

5. A method as recited in claim 1 wherein said step of compacting (b) comprises compacting said powders at a pressure of from about 200-400 MPa.

6. A method as recited in claim 3 wherein said steps (b) and (c) are conducted concurrently for a period of from 1-3 hrs.

7. A method as recited in claim 4 comprising providing said titanium powder in a particle size range of from about 100-300 microns.

8. A method as recited in claim 1 further comprising providing about 1 wt. % of TiO₂ to said tungsten and titanium powders.

10. A sputter target made by the method of claim 1.

12. A sputter target as recited in claim 10 consisting essentially of 10 wt. % titanium, remainder tungsten and having a density of at least about 95% of the theoretical density.

9. A method for preparing a tungsten-titanium sputtering target having substantially no β

(Ti, W) phase present and exhibiting improvement in reduction of particulate emission upon sputtering, comprising;

(a) providing powders of said tungsten and titanium with the amount of said titanium powder provided being on the order of about 1-20 wt. % based on the total weight of said tungsten and titanium;

(b) compacting said powders at a pressure of from about 200-400 MPa for a time and temperature given within region 102 shown in FIG. 3, said region being bounded by curves 100 and 112 and lines 106 and 110 of said FIG. 3.

11. A sputter target made by the method of claim 9.

13. A sputter target as recited in claim 11 consisting essentially of 10 wt. % titanium, remainder tungsten and having a density of at least about 95% of the theoretical density.

14. Sputter target comprising from about 1-20 wt. % titanium, and tungsten, said target characterized by having a density of at least about 95% of the theoretical density and having substantially zero β

(T,W) phase present.

15. Sputter target as recited in claim 14 having from trace to about 15% (by volume) β

(Ti,W) present.

16. Sputter target as recited in claim 15 having from trace to about 12% (by volume) β

(Ti,W) present.

17. Sputter target as recited in claim 15 having from trace to about 10% (by volume) β

(Ti,W) present.

18. Sputter target comprising from about 1-20 wt. % titanium, and tungsten, said target having a density of about 95% of the theoretical density and having only trace amounts of β

(Ti,W) phase present therein.