Method of producing a thin silicon-on-insulator layer

• US 5,234,535 A
• Filed: 12/10/1992
• Issued: 08/10/1993
• Est. Priority Date: 12/10/1992
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Yapsir, Andrie S., Hsu, Louis L., Beyer, Klaus D., Silvestri, Victor J.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): DANG, TRUNG Q
• Application Number:
  US07/988,655
• Time in Patent Office: 243 Days
• Field of Search: 437/62, 437/225, 437/974, 148/DIG. 12, 148/DIG. 135, 148/DIG. 150, 156/630, 156/633, 156/643
• US Class Current: 438/459
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: Y10S 148/012 Bonding, e.g. electrostatic for strain gauges
• CPC Class Codes: Y10S 148/135 Removal of substrate
• CPC Class Codes: Y10S 438/981 Utilizing varying dielectric thickness

Abstract

A method of forming a thin silicon SOI layer by wafer bonding, the thin silicon SOI layer being substantially free of defects upon which semiconductor structures can be subsequently formed, is disclosed. The method comprises the steps of:

a) providing a first wafer comprising a silicon substrate of a first conductivity type, a diffusion layer of a second conductivity type formed thereon and having a first etch characteristic, a thin epitaxial layer of the second conductivity type formed upon the diffusion layer and having a second etch characteristic different from the first etch characteristic of the diffusion layer, and a thin oxide layer formed upon the thin epitaxial layer;

b) providing a second wafer comprising a silicon substrate having a thin oxide layer formed on a surface thereof;

c) wafer bonding said first wafer to said second wafer;

d) removing the silicon substrate of said first wafer in a controlled mechanical manner; and

e) removing the diffusion layer of said first wafer using a selective dry low energy plasma process to expose the underlying thin epitaxial layer, the selective dry low energy plasma process providing an etch ratio of the first etch characteristic to the second etch characteristic such that the diffusion layer is removed with minimal formation of any shallow plasma radiation damage to the exposed underlying thin epitaxial layer.

Claims

1. A method of forming a thin semiconductor layer substantially free of defects upon which semiconductor structures can be subsequently formed, comprising the steps of:

a) providing a first wafer comprising a silicon substrate of a first conductivity type, a diffusion layer of a second conductivity type formed thereon and having a first etch characteristic, a thin epitaxial layer of the second conductivity type formed upon the diffusion layer and having a second etch characteristic different from the first etch characteristic of the diffusion layer, and a thin oxide layer formed upon the thin epitaxial layer;

b) providing a second wafer comprising a silicon substrate having a thin oxide layer formed on a surface thereof;

c) wafer bonding said first wafer to said second wafer;

d) removing the silicon substrate of said first wafer in a controlled mechanical manner; and

e) removing the diffusion layer of said first wafer using a selective low energy dry plasma process to expose the underlying thin epitaxial layer, the selective dry plasma process providing an etch ratio of the first etch characteristic to the second etch characteristic such that the diffusion layer is removed with minimal formation of any shallow plasma radiation damage to the expose underlying thin epitaxial layer.

2. The method of forming a thin semiconductor layer according to claim 1, wherein the step of providing a first wafer comprises providing a silicon substrate, an N⁺ diffusion layer formed thereon, a thin N^- epitaxial layer of a desired thickness formed upon the N⁺ diffusion layer, and a thin oxide layer formed upon the thin N^- epitaxial layer.

3. The method of forming a thin semiconductor layer according to claim 1, wherein the step of providing a first wafer comprises providing a silicon substrate, an N⁺ diffusion layer formed thereon, an N^- epitaxial layer of a desired thickness in the range of 0.05 to 2.0 μ

m formed upon the N⁺ diffusion layer, and a thin oxide layer formed upon the thin N^- epitaxial layer.

4. The method of forming a thin semiconductor layer according to claim 1 wherein the step of removing the diffusion layer of said first wafer using a selective low energy dry plasma process comprises using a Cl₂ plasma wherein an etching ratio N⁺ /N^- of 40 can be obtained.

5. The method of forming a thin semiconductor layer according to claim 1, further comprising the step of:

f) removing shallow plasma radiation damage from the exposed surface of the thin epitaxial layer.

6. The method of forming a thin semiconductor layer according to claim 5, wherein the step of providing a first wafer comprises providing a P-type silicon substrate, an N⁺ diffusion layer formed thereon, a thin N^- epitaxial layer of a desired thickness formed upon the N⁺ diffusion layer, and a thin oxide layer formed upon the thin N^- epitaxial layer.

7. The method of forming a thin semiconductor layer according to claim 5, wherein the step of providing a first wafer comprises providing a silicon substrate, an N⁺ diffusion layer formed thereon, an N^- epitaxial layer of a desired thickness in the range of 0.05 to 2.0 μ

m formed upon the N⁺ diffusion layer, and a thin oxide layer formed upon the thin N^- epitaxial layer.

8. The method of forming a thin semiconductor layer according to claim 5 wherein the step of removing the diffusion layer of said first wafer using a selective dry low energy plasma process comprises using a Cl₂ plasma wherein an etching ratio N⁺ /N^- of 40 can be obtained.

9. A method of forming a thin semiconductor layer substantially free of defects upon which semiconductor structures can be subsequently formed, comprising the steps of:

a) forming a silicon diffusion layer upon a first wafer, the first wafer comprising a silicon substrate of a first conductivity type and the diffusion layer being of a second conductivity type and characterized by a first etch characteristic;

b) forming a first thin epitaxial layer upon said diffusion layer, said first thin epitaxial layer being of the second conductivity type and characterized by a second etch characteristic different from the first etch characteristic of said diffusion layer;

c) doping said first thin epitaxial layer in predetermined regions to form diffusion regions therein, said diffusion regions being of the second conductivity type and characterized by the first etch characteristic;

d) forming a second thin epitaxial layer upon said first thin epitaxial layer, said second thin epitaxial layer being of the second conductivity type and characterized by the second etch characteristic;

e) forming a thin oxide layer upon said second thin epitaxial layer;

f) providing a second wafer comprising a silicon substrate having a thin oxide layer formed on a surface thereof;

g) wafer bonding said first wafer to said second wafer;

h) removing the silicon substrate of said first wafer in a controlled mechanical manner; and

i) removing said diffusion layer and said diffusion regions of said first wafer using a selective low energy dry plasma process to expose areas of the underlying first and second thin epitaxial layers in contact with said diffusion layer and said diffusion regions, respectively, the selective dry plasma process providing an etch ratio of the first etch characteristic to the second etch characteristic such that said diffusion layer and diffusion regions are removed with minimal formation of any shallow plasma radiation damage to the exposed areas of the underlying first and second thin epitaxial layers, respectively.

10. The method of forming a thin semiconductor layer according to claim 9, wherein:

step a) comprises forming an N⁺ diffusion layer upon the silicon substrate;

step b) comprises forming a first thin N^- epitaxial layer of a first desired thickness upon the N⁺ diffusion layer;

step c) comprises doping the first thin epitaxial layer with N⁺ arsenic in the predetermined regions; and

step d) comprises forming a second thin N^- epitaxial layer of a second desired thickness upon the first thin N^- epitaxial layer.

11. The method of forming a thin semiconductor layer according to claim 10, wherein the first and second desired thickness'"'"'s of the first and second thin N^- epitaxial layers are in the range of 0.05 to 2.0 μ

m.

12. The method of forming a thin semiconductor layer according to claim 9 wherein

step i) comprises removing the diffusion layer and the diffusion regions of said first wafer with a selective low energy dry Cl₂ plasma wherein an etching ratio N⁺ /N^- of 40 can be obtained.

13. The method of forming a thin semiconductor layer according to claim 9, further comprising the step of:

j) removing shallow plasma radiation damage from the exposed surfaces of said first and second thin epitaxial layers.

14. The method of forming a thin semiconductor layer according to claim 13, wherein:

step a) comprises forming an N⁺ diffusion layer upon the silicon substrate;

step b) comprises forming a first thin N^- epitaxial layer of a first desired thickness upon the N⁺ diffusion layer;

step c) comprises doping the first thin epitaxial layer with N⁺ arsenic to form predetermined diffusion regions; and

step d) comprises forming a second thin N^- epitaxial layer of a second desired thickness upon the first thin N^- epitaxial layer.

15. The method of forming a thin semiconductor layer according to claim 14, wherein the first and second desired thickness'"'"'s of the first and second thin N^- epitaxial layers are in the range of 0.05 to 2.0 μ

m.

16. The method of forming a thin semiconductor layer according to claim 13 wherein

step i) comprises removing the diffusion layer and the diffusion regions with a selective low energy dry Cl₂ plasma wherein an etching ratio N⁺ /N^- of 40 can be obtained.

17. A method of forming a thin semiconductor layer substantially free of defects upon which semiconductor structures can be subsequently formed, comprising the steps of:

a) forming a silicon diffusion layer upon a first wafer, the first wafer comprising a silicon substrate of a first conductivity type and the diffusion layer being of a second conductivity type and characterized by a first etch characteristic;

b) forming an epitaxial layer upon said diffusion layer, said epitaxial layer being of the second conductivity type and characterized by a second etch characteristic different from the first etch characteristic of said diffusion layer;

c) forming trenches in said epitaxial layer at predetermined regions therein;

d) filling said trenches with a trench fill;

e) planarizing a top surface of said epitaxial layer and said filled trenches;

f) forming a thin oxide layer upon said planarized epitaxial layer and filled trenches;

g) providing a second wafer comprising a silicon substrate having a thin oxide layer formed on a surface thereof;

h) wafer bonding said first wafer to said second wafer;

i) removing the silicon substrate of said first wafer in a controlled mechanical manner; and

j) removing said diffusion layer of said first wafer using a selective dry low energy plasma process to expose the underlying epitaxial layer, the selective dry plasma process providing an etch ratio of the first etch characteristic to the second etch characteristic such that said diffusion layer is removed with minimal formation of any shallow plasma radiation damage to the exposed underlying epitaxial layer.

18. The method of forming a thin semiconductor layer according to claim 17, wherein:

step a) comprises forming an N⁺ diffusion layer upon the silicon substrate; and

step b) comprises forming a N^- epitaxial layer of a desired thickness upon the N⁺ diffusion layer.

19. The method of forming a thin semiconductor layer according to claim 18, wherein the desired thickness of the N^- epitaxial layer is in the range of 0.05 to 2.0 μ

m.

20. The method of forming a thin semiconductor layer according to claim 17 wherein

step j) comprises removing the diffusion layer of said first wafer with a selective dry low energy Cl₂ plasma wherein an etching ratio N⁺ /N^- of 40 can be obtained.

21. The method of forming a thin semiconductor layer according to claim 17, further comprising the step of:

k) removing shallow plasma radiation damage from the exposed surface of the epitaxial layer.

22. The method of forming a thin semiconductor layer according to claim 21, wherein:

step a) comprises forming an N⁺ diffusion layer upon the silicon substrate; and

step b) comprises forming a N^- epitaxial layer of a desired thickness upon the N⁺ diffusion layer.

23. The method of forming a thin semiconductor layer according to claim 22, wherein the desired thickness of the N^- epitaxial layer is in the range of 0.05 to 2.0 μ

m.

24. The method of forming a thin semiconductor layer according to claim 21 wherein

step j) comprises removing the diffusion layer of said first wafer with a selective dry low energy Cl₂ plasma wherein an etching ratio N⁺ /N^- of 40 can be obtained.