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Method for determining planarization endpoint during chemical-mechanical polishing

  • US 5,234,868 A
  • Filed: 10/29/1992
  • Issued: 08/10/1993
  • Est. Priority Date: 10/29/1992
  • Status: Expired due to Fees
First Claim
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1. A method for determining planarization endpoint in chemical-mechanical polishing during integrated circuit fabrication on a substrate, comprising the steps of:

  • depositing a first layer of insulation on said substrate;

    forming a first metallization pattern on a first region of said first layer of insulation;

    forming a moat around an island in a second region of said first layer of insulation;

    forming a second metallization pattern on said island;

    conformally depositing a second layer of insulation over said first layer of insulation and said first and second metallization patterns;

    performing chemical-mechanical polishing of said second layer of insulation;

    monitoring said polishing for exposure of said second metallization pattern; and

    ending said polishing upon exposure of said second metallization pattern, whereby planarization of said second layer of insulation above said first region is achieved.

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