Method for determining planarization endpoint during chemical-mechanical polishing
First Claim
1. A method for determining planarization endpoint in chemical-mechanical polishing during integrated circuit fabrication on a substrate, comprising the steps of:
- depositing a first layer of insulation on said substrate;
forming a first metallization pattern on a first region of said first layer of insulation;
forming a moat around an island in a second region of said first layer of insulation;
forming a second metallization pattern on said island;
conformally depositing a second layer of insulation over said first layer of insulation and said first and second metallization patterns;
performing chemical-mechanical polishing of said second layer of insulation;
monitoring said polishing for exposure of said second metallization pattern; and
ending said polishing upon exposure of said second metallization pattern, whereby planarization of said second layer of insulation above said first region is achieved.
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Accused Products
Abstract
A moat is preferably created in a region of an insulation layer on a wafer that will be destroyed when the wafer is cut. The integrated circuit includes a first metal pattern in an active region and a second metal pattern on the moat island. An insulating layer is conformally deposited and chemical-mechanical polishing is performed thereon. The polish rate above the second metal pattern is significantly higher than above the first metal pattern. Polishing is monitored and ended when the second metal pattern is exposed, achieving planarization of the top surface in the active region of the integrated circuit. Monitoring may be visual or electrical. For visual monitoring, the second metal pattern preferably comprises a visually noticeable metal in relation to the insulating layer.
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Citations
24 Claims
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1. A method for determining planarization endpoint in chemical-mechanical polishing during integrated circuit fabrication on a substrate, comprising the steps of:
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depositing a first layer of insulation on said substrate; forming a first metallization pattern on a first region of said first layer of insulation; forming a moat around an island in a second region of said first layer of insulation; forming a second metallization pattern on said island; conformally depositing a second layer of insulation over said first layer of insulation and said first and second metallization patterns; performing chemical-mechanical polishing of said second layer of insulation; monitoring said polishing for exposure of said second metallization pattern; and ending said polishing upon exposure of said second metallization pattern, whereby planarization of said second layer of insulation above said first region is achieved. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for electrically determining planarization endpoint in chemical-mechanical polishing during integrated circuit fabrication on a substrate, said chemical-mechanical polishing including a polishing pad capable of electrical connection to a conducting surface in contact with said polishing pad, said method comprising:
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depositing a first layer of insulation on said substrate; forming a first metallization pattern on a first region of said first layer of insulation; forming a moat around an island in a second region of said first layer of insulation; forming a second metallization pattern on said island; electrically grounding said second metallization pattern; conformally depositing a second layer of insulation over said first layer of insulation and said first and second metallization patterns; performing chemical-mechanical polishing of said second layer of insulation; monitoring said polishing for an electrical connection between said polishing pad and said second metallization pattern; and ending said polishing in response to an electrical connection between said polishing pad and said second metallization pattern, whereby planarization of said second layer of insulation above said first region is achieved. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method for determining planarization endpoint in chemical-mechanical polishing during integrated circuit fabrication on a substrate, comprising the steps of:
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depositing a first layer of insulation on said substrate; forming a metallization pattern on said first insulation layer in a non-kerf region of said integrated circuit; forming a plurality of moats of varying width around islands in said first insulation layer in one or more kerf regions of said integrated circuit; forming a metallization pattern on each of said plurality of islands; choosing one of said plurality of island metallization patterns for monitoring; conformally depositing a second layer of insulation over said first layer of insulation, said metallization pattern in said non-kerf region and said plurality of island metallization patterns; performing chemical-mechanical polishing of said second layer of insulation; monitoring said polishing for exposure of said chosen island metallization pattern; and ending said polishing upon exposure of said chosen island metallization pattern. - View Dependent Claims (24)
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Specification