Transmission power amplifier device

• US 5,235,289 A
• Filed: 07/28/1992
• Issued: 08/10/1993
• Est. Priority Date: 08/07/1991
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Kunitomo, Kouichi
• Primary Examiner(s): Mullins, James B.
• Application Number:
  US07/920,905
• Time in Patent Office: 378 Days
• Field of Search: 330/129, 330/277, 330/278, 330/296, 455/89, 455/116, 455/127
• US Class Current: 330/277
• CPC Class Codes: H03F 1/0261 with control of the polarisation voltage or current, e.g. gliding Class A
• CPC Class Codes: H03F 1/3205 in field-effect transistor amplifiers

Abstract

Disclosed is a transmission power amplifier device comprising a GaAs power amplifier using a GaAs FET as its amplifier element. In order to compensate the non-linearity of the frequency characteristic of the transmission power amplification efficiency of the GaAs power amplifier with respect to individual amplified signal transmission channels, gate voltage information for each of the channels is stored beforehand in a memory, and a gate voltage obtained by adding a fixed voltage to an analog voltage generated on the basis of the gate voltage information read out from the memory is applied to the gate of the GaAs FET so as to flatten the frequency characteristic of the transmission power amplification efficiency.

Claims

1. A transmission power amplifier device comprising:

a power amplifier including a GaAs FET;

means for storing the relation between predetermined information of the gate voltage of said GaAs FET and the transmission power amplification efficiency for each of individual channels;

means for reading out from said storage means the predetermined gate voltage information corresponding to each of said channels;

means for generating a DC voltage on the basis of the gate voltage information read out from said storage means;

means for generating a fixed voltage; and

means for adding said fixed voltage to said DC voltage and applying the sum voltage to the gate of said GaAs FET.

2. A transmission power amplifier device according to claim 1, wherein said means for reading out said gate voltage information from said storage means is a CPU, and said storage means is an externally mounted memory.

3. A transmission power amplifier device according to claim 2, wherein said memory is a look-up table.

4. A transmission power amplifier device according to claim 2, wherein said storage means is built in said CPU.

5. A transmission power amplifier device according to claim 1, wherein said DC voltage generating means is a D/A converter which converts the gate voltage information read out from said storage means into an analog voltage.