Position detecting method and apparatus

• US 5,235,408 A
• Filed: 05/28/1992
• Issued: 08/10/1993
• Est. Priority Date: 09/05/1988
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Matsugu, Masakazu, Saitoh, Kenji, Suda, Shigeyuki
• Primary Examiner(s): Rosenberger, Richard A.
• Assistant Examiner(s): Pham, Hoa Q.
• Application Number:
  US07/888,434
• Time in Patent Office: 439 Days
• Field of Search: 356/399-401, 356/153, 356/154, 356/354, 356/356, 250/548, 250/557, 250/237 G, 355/53
• US Class Current: 356/401
• CPC Class Codes: G03F 9/7049 Technique, e.g. interferometric

Abstract

A device for detecting a positional relationship between a mask and a wafer, includes a light source for projecting light toward the mask, a first photodetecting system for detecting the position, on a predetermined plane, of first light deflected by the mask and the wafer, wherein the position of incidence on the first photodetecting system of the first light is changeable with the positional relationship between the mask and the wafer, a second photodetecting system for detecting the position, on a predetermined plane, of incidence of second light deflected by the mask, wherein the position of incidence on the second photodetecting system, of the second light being changeable with relative inclination between the mask and the light source, and a position detecting system for detecting the relative position of the mask and the wafer on the basis of the detection by the first and second photodetecting systems, wherein the detection by the position detecting system can be free from the relative inclination between the mask and the light source.

Claims

1. A method of detecting the relative position of first and second objects, comprising the steps of:

providing the first object with an alignment pattern having an optical power and a reference pattern;

providing the second object with an alignment mark having an optical power;

illuminating the first and second objects with light whereby a first beam is produced as a result of passage of light through the alignment pattern of the first object and reflection of the light by the alignment mark of the second object and under the influence of the optical powers of both of the alignment pattern and the alignment mark, and a second beam is produced as a result of the reflection of light by the reference pattern of the first object, wherein the first and second beams travel along different light paths; and

detecting the position of the second object relative to the first object, on the basis of the position of incidence of each of the first and second beams upon a predetermined plane.

2. A method according to claim 1, wherein each of the alignment pattern and the alignment mark comprises a zone plate pattern.

3. A method according to claim 2, wherein the reference pattern comprises a zone plate pattern which is arranged so that said illuminating step comprises the step of convergently projecting the second beam on the predetermined plane.

4. A method according to claim 1, wherein the first object is a mask and the second object is a wafer.

5. A method of detecting a gap between first and second objects, comprising the steps of:

providing the first object with an input pattern, an output pattern having an optical power, and a reference pattern;

illuminating the first and second objects with light whereby a first beam is produced as a result of reception of light by the input pattern, oblique incidence and subsequent reflection of the light from the input pattern upon and by the surface of the second object, and deflection of the reflected light by the output pattern, while a second beam is produced as a result of the reflection of light by the reference pattern of the first object, wherein the first and second light beams travel along different light paths; and

detecting the gap between the first and second objects on the basis of the position of incidence of each of the first and second beams upon a predetermined plane.

6. A method according to claim 5, wherein the output pattern comprises a zone plate pattern.

7. A method according to claim 6, wherein the reference pattern comprises a grating pattern.

8. A method according to claim 7, wherein the reference pattern comprises a zone plate pattern which is arranged so that said illuminating step comprises the step of convergently projecting the second beam on the predetermined plane.

9. A method according to claim 7, wherein the input pattern comprises a grating pattern.

10. A method according to claim 5, wherein the first object is a mask and the second object is a wafer.

11. A method of aligning first and second objects, comprising the steps of:

providing the first object with an alignment pattern having an optical power and a reference pattern;

providing the second object with an alignment mark having an optical power;

illuminating the first and second objects with light whereby a first beam is produced as a result of passage of light through the alignment pattern of the first object and the reflection of the light by the alignment mark of the second object and under the influence of the optical powers of both of the alignment pattern and the alignment mark, and a second beam is produced as a result of reflection of light by the reference pattern of the first object, wherein the first and second beams travel along different light paths;

detecting the position of the second object relative to the first object, on the basis of the position of incidence of each of the first and second beams upon a predetermined plane; and

adjusting the positional relationship between the first and second objects.

12. A method according to claim 11, wherein each of the alignment pattern and the alignment mark comprises a zone plate pattern.

13. A method according to claim 12, wherein the reference pattern comprises a zone plate pattern which is arranged so that said illuminating step comprises the step of convergently projecting the second beam on the predetermined plane.

14. A method according to claim 11, wherein the first object is a mask and the second object is a wafer.

15. A method of adjusting a gap between first and second objects, comprising the steps of:

providing the first object with an input pattern, an output pattern having an optical power, and a reference pattern;

illuminating the first and second objects with light whereby a first beam is produced as a result of reception of light by the input pattern, oblique incidence and subsequent reflection of the light from the input pattern upon and by the surface of the second object, and deflection of the reflected light by the output pattern, while a second beam is produced as a result of reflection of light by the reference pattern of the first object, wherein the first and second light beams travel along different light paths;

detecting the gap between the first and second objects on the basis of the position of incidence of each of the first and second beams upon a predetermined plane; and

adjusting the gap between the first and second objects.

16. A method according to claim 15, wherein the output pattern comprises a zone plate pattern.

17. A method according to claim 16, wherein the reference pattern comprises a grating pattern.

18. A method according to claim 17, wherein the reference pattern comprises a zone plate pattern which is arranged so that said illuminating step comprises the step of convergently projecting the second beam on the predetermined plane.

19. A method according to claim 17, wherein the input pattern comprises a grating pattern.

20. A method according to claim 15, wherein the first object is a mask and the second object is a wafer.

21. An aligner for aligning a mask and a wafer, wherein the mask is provided with an alignment pattern having an optical power and a reference pattern, while the wafer is provided with an alignment mark having an optical power, said aligner comprising:

illuminating means for illuminating the mask and the wafer with light whereby a first beam is produced as a result of passage of light through the alignment pattern of the mask and reflection of the light by the alignment mark of the wafer and under the influence of the optical powers of both of the alignment pattern and the alignment mark, and a second beam is produced as a result of reflection of light by the reference pattern of the mask, wherein the first and second light beams travel along different light paths;

signal forming means for detecting the position of incidence of each of the first and second beams upon a predetermined plane and for producing, on the basis of the detection, a signal for correction of a positional deviation between the mask and the wafer; and

adjusting means for adjusting the positional relationship between the mask and the wafer in accordance with the correction signal.

22. A method according to claim 21, wherein each of the alignment pattern and the alignment mark comprises a zone plate pattern.

23. A method according to claim 22, wherein the reference pattern comprises a zone plate pattern which is arranged so that the second beam is convergently projected on the predetermined plane.

24. A method according to claim 21, wherein said signal forming means includes first and second detectors, said first detector having a light receiving surface for receiving the first beam and producing a first signal corresponding to the position of incidence of the first beam upon its light receiving surface, said second detector having a light receiving surface for receiving the second beam and producing a second signal corresponding to the position of incidence of the second beam upon its light receiving surface, wherein the first and second signals are used to produce the signal for correction of the positional deviation, and wherein said illuminating means and said first and second detectors are accommodated in a common housing.

25. An aligner for aligning a mask and a wafer, wherein the mask has an input pattern, an output pattern having an optical power, and a reference pattern, said aligner comprising:

illuminating means for illuminating the mask and the wafer with light, whereby a first beam is produced as a result of reception of light by the input pattern, oblique incidence and subsequent reflection of the light from the input pattern upon and by the surface of the wafer, and deflection of the reflected light by the output pattern, while a second beam is produced as a result of reflection of light by the reference pattern of the mask, wherein the first and second light beams travel along different light paths;

signal forming means for detecting the position of incidence of each of the first and second beams upon a predetermined plane and for producing, on the basis of the detection, a signal for correction of an error in a gap between the mask and the wafer; and

adjusting means for adjusting the gap between the mask and the wafer, in accordance with the produced signal.

26. An aligner according to claim 25, wherein the output pattern comprises a zone plate pattern.

27. An aligner according to claim 26, wherein the reference pattern comprises a grating pattern.

28. An aligner according to claim 27, wherein the reference pattern comprises a zone plate pattern which is arranged so that the second beam is convergently projected on the predetermined plane.

29. An aligner according to claim 27, wherein the input pattern comprises a grating pattern.

30. An aligner according to claim 25, wherein said signal forming means includes first and second detectors, said first detector having a light receiving surface for receiving the first beam and producing a first signal corresponding to the position of incidence of the first beam upon its light receiving surface, said second detector having a light receiving surface for receiving the second beam and producing a second signal corresponding to the position of incidence of the second beam upon its light receiving surface, wherein the first and second signals are used to produce the signal for correction of the gap error, and wherein said illuminating means and said first and second detectors are accommodated in a common housing.

31. A method of manufacturing a semiconductor device, comprising the steps of:

providing a mask having a circuit pattern, an alignment pattern with an optical power, and a reference pattern;

providing a wafer having an alignment mark with an optical power;

illuminating the mask and the wafer with light whereby a first beam is produced as a result of the passage of light through the alignment pattern of the mask and the reflection of the light by the alignment mark of the wafer and under the influence of the optical powers of both of the alignment pattern and the alignment mark, and a second beam is produced as a result of the reflection of light by the reference pattern of the mask, wherein the first and second beams travel along different light paths;

detecting the position of the wafer relative to the mask, on the basis of the position of incidence of each of the first and second beams upon a predetermined plane;

adjusting the positional relationship between the mask and the wafer; and

transferring the circuit pattern of the mask onto the wafer.

32. A semiconductor device manufactured by a method which comprises the steps of:

providing a mask having a circuit pattern, an alignment pattern with an optical power, and a reference pattern;

providing a wafer having an alignment mark with an optical power;

illuminating the mask and the wafer with light whereby a first beam is produced as a result of the passage of light through the alignment pattern of the mask and the reflection of the light by the alignment mark of the wafer and under the influence of the optical pwoers of both of the alignment pattern and the alignment mark, and a second beam is produced as a result of the reflection of light by the reference pattern of the mask, wherein the first and second beams travel along different light paths;

detecting the position of the wafer relative to the mask, on the basis of the position of incidence of each of the first and second beams upon a predetermined plane;

adjusting the positional relationship between the mask and the wafer; and

transferring the circuit pattern of the mask onto the wafer.