Aligned wafer bonding
First Claim
Patent Images
1. A process for bonding a surface feature of a semiconductor structure to a surface feature of a semiconductor, optical, or micromechanical structure, comprising the steps of:
- (a) aligning at least two complementary surface features of a plurality of structures having surface features to be bonded;
(b) bringing said surface features into physical contact at room temperature whereby atomic bonds are formed between said surface features; and
(c) annealing said structures to strengthen said atomic bonds.
6 Assignments
0 Petitions
Accused Products
Abstract
A process for precision alignment and bonding of complementary micromechanical, electrical and optical structures. Surface features of the structures are critically aligned and brought into physical contact within atomic dimensions to form direct bonds without the use of adhesives. The bonds are initially formed at room temperature and then strengthened by a high temperature anneal. Three dimensional structures may be formed in separate prefabricated layers rather than monolithically through the use of this process.
-
Citations
23 Claims
-
1. A process for bonding a surface feature of a semiconductor structure to a surface feature of a semiconductor, optical, or micromechanical structure, comprising the steps of:
-
(a) aligning at least two complementary surface features of a plurality of structures having surface features to be bonded; (b) bringing said surface features into physical contact at room temperature whereby atomic bonds are formed between said surface features; and (c) annealing said structures to strengthen said atomic bonds. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A method of directly bonding silicon based surface features of electrical, micromechanical and optical structures, comprising the steps of:
-
(a) establishing a plurality of alignment marks on the surfaces of at least two structures having complementary silicon based surface features to be bonded; (b) positioning said surfaces to oppose each other in close proximity while said surface features lie in substantially the same plane; (c) passing beams of infrared light through said structures and projecting an infrared image of said surface features to a viewing screen; (d) viewing said infrared image and superimposing said alignment marks by bringing said alignment marks into rotational and transitional alignment; (e) bringing said surface features into physical contact whereby an atomic bond is formed; and (f) annealing said surface features to strengthen said bond. - View Dependent Claims (7, 8, 9)
-
-
10. A method of fabricating a semiconductor device, comprising the steps of
(a) establishing at least one alignment mark on the first surface of a first structure having first and second surfaces; -
(b) establishing at least one alignment mark on the first surface of a second structure having first and second surfaces; (c) positioning said first surfaces of said first and second structures to oppose each other in close proximity while said surfaces lie in substantially the same plane; (d) passing infrared light through said structures and projecting an infrared image of said first surfaces to a viewing screen; (e) viewing said infrared image and superimposing said alignment marks by bringing said alignment marks into rotational and transitional alignment; (e) bringing said first surfaces of said structures into physical contact whereby an atomic bond is formed between said surfaces; and (f) annealing said bonded surfaces to strengthen said bond. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
-
Specification