Methods for coating adherent diamond films on cemented tungsten carbide substrates

• US 5,236,740 A
• Filed: 04/26/1991
• Issued: 08/17/1993
• Est. Priority Date: 04/26/1991
• Status: Expired due to Fees

• Current Assignee: The National Center for Manufacturing Sciences
• Original Assignee: The National Center for Manufacturing Sciences
• Inventors: Peters, Michael G., Cummings, Robert H.
• Primary Examiner(s): Beck, Shrive
• Assistant Examiner(s): NOT, DEFINED
• Application Number:
  US07/693,234
• Time in Patent Office: 844 Days
• Field of Search: 427/255, 427/249, 427/248.1, 427/307, 427/309, 156/651, 156/656
• US Class Current: 427/249.13
• CPC Class Codes: C23C 16/0227 by cleaning or etching
• CPC Class Codes: C23C 16/27 Diamond only
• CPC Class Codes: C23F 1/02 Local etching
• CPC Class Codes: C23F 1/28 for etching iron group metals
• CPC Class Codes: Y10S 427/103 Diamond-like carbon coating, i.e. DLC
• CPC Class Codes: Y10T 428/26 Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
• CPC Class Codes: Y10T 428/30 Self-sustaining carbon mass or layer with impregnant or other layer
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

A cemented tungsten carbide substrate is prepared for coating with a layer of diamond film by subjecting the substrate surface to be coated to a process which first removes a small amount of the tungsten carbide at the surface of the substrate while leaving the cobalt binder substantially intact. Murakami'"'"'s reagent is presently preferred. The substrate is then subjected to a process which removes any residue remaining on the surface as a result of the performance of the process which removes the tungsten carbide. A solution of sulfuric acid and hydrogen peroxide is presently preferred. A diamond coated cemented tungsten carbide tool is formed using an unpolished substrate, which may be prepared by etching as described above or by etching in nitric acid prior to diamond film deposition. Deposition of a substantially continuous diamond film may be accomplished by reactive vapor deposition, thermally assisted (hot filament) CVD, plasma-enhanced CVD, or other techniques.

Claims

1. A process for coating an unpolished cemented tungsten carbide substrate with a diamond film, comprising the steps of:

performing a first etching step comprising etching an unpolished cemented tungsten carbide substrate in Murakami'"'"'s reagent;

performing a second etching step comprising etching said unpolished substrate in a solution of sulfuric acid and hydrogen peroxide;

depositing a substantially continuous diamond film on a selected portion of said surface of said unpolished substrate.

3. The process of claim 1 wherein said first etching step comprises an etch in a solution comprising 10 grams of potassium ferricyanide and 10 grams of potassium hydroxide per 100 ml of water for a period greater than about two minutes and wherein said second etching step comprises an etch in a solution of about 30 volume percent sulfuric acid and about 70 volume percent hydrogen peroxide for a period greater than about 5 seconds.

2. A process for coating an unpolished cemented tungsten carbide substrate with a diamond film, comprising the steps of:

performing a first etching step comprising etching an unpolished cemented tungsten carbide substrate in Murakami'"'"'s reagent;

performing a second etching step comprising etching said unpolished substrate in a solution of sulfuric acid and hydrogen peroxide;

depositing a substantially continuous CVD polycrystalline diamond film on a selected portion of said surface of said unpolished substrate.

4. The process of claim 2 wherein said first etching step comprises an etch in a solution comprising 10 grams of potassium ferricyanide and 10 grams of potassium hydroxide per 100 ml of water for a period greater than about two minutes and wherein said second etching step comprises an etch in a solution of about 30 volume percent sulfuric acid and about 70 volume percent hydrogen peroxide for a period greater than about 5 seconds.