Power semiconductor device

• US 5,237,194 A
• Filed: 04/24/1991
• Issued: 08/17/1993
• Est. Priority Date: 04/27/1990
• Status: Expired due to Fees

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Takahashi, Mitsuasa
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): BOWERS, COURTNEY
• Application Number:
  US07/690,585
• Time in Patent Office: 846 Days
• Field of Search: 357/28, 357/23.4, 357/23.14, 357/41, 357/42, 257/337, 257/338, 257/341, 257/467, 257/470, 307/354, 307/362
• US Class Current: 257/337
• CPC Class Codes: H01L 27/0251 for MOS devices
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate

Abstract

A power semiconductor device is constructed by integrating a DMOS transistor and a lateral MOS transistor on the same semiconductor chip. The lateral MOS transistor is formed within a well with a conductivity type which is the same as the conductivity type of the source region of the DMOS transistor. The gate voltage is monitored at the time of connecting the gate and the drain of the lateral MOS transistor and of driving it at a constant current. When the gate voltage drops below a predetermined value, the driving of the DMOS transistor is stopped. The breakdown of the power semiconductor device due to heating can thus be prevented.

Claims

1. A power semiconductor device comprising:

a vertical field effect transistor having a base region of a first conductivity type selectivity formed on a main surface of a semiconductor substrate of a second conductivity type, a first drain region that includes a portion of said semiconductor substrate adjacent to said base region, a first source region of the second conductivity type formed within said base region, a first gate insulating film formed on said base region placed between said first source region and said first drain region and a first gate electrode formed on said first gate insulating film,

a temperature detection cell comprising an MOS transistor having a well of the first conductivity type formed on said one main surface of said semiconductor substrate apart from said base region, a second source region and a second drain region of the second conductivity type formed respectively within said well, a second gate insulating film formed on said well between said second source region and said second drain region, and a second gate electrode formed on said second gate insulating film, and

first means for supplying a first voltage to said first gate electrode of said vertical field effect transistor, for driving said vertical field effect transistor, second means for detecting a second voltage to be applied to said second gate electrode required for holding the current, that flows across the surface of said well found between said second source region and said second drain region of said MOS transistor, at a predetermined value and third means for inactivating said first means by detecting that said second voltage is above or below a predetermined value.

2. A power semiconductor device as claimed in claim 1, wherein said second means includes means for short-circuiting said second gate electrode and said second drain region.