×

Method of fabrication metal-electrode in semiconductor device

  • US 5,240,868 A
  • Filed: 12/20/1991
  • Issued: 08/31/1993
  • Est. Priority Date: 04/30/1991
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of fabricating a metal electrode of a semiconductor device comprising the steps of:

  • forming a first metal layer, which is anodizable, to a first predetermined thickness on a substrate;

    forming and patterning a second metal layer, which is not anodizable, to a second predetermined thickness so as to act as a mask on said first metal layer;

    depositing a third metal layer, that may be anodizable, to a third predetermined thickness and having a nonflat surface; and

    flattening the surface of the third layer by anodic oxidation of the first and third layers using the second layer as a mask.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×