Method of fabrication metal-electrode in semiconductor device
First Claim
1. A method of fabricating a metal electrode of a semiconductor device comprising the steps of:
- forming a first metal layer, which is anodizable, to a first predetermined thickness on a substrate;
forming and patterning a second metal layer, which is not anodizable, to a second predetermined thickness so as to act as a mask on said first metal layer;
depositing a third metal layer, that may be anodizable, to a third predetermined thickness and having a nonflat surface; and
flattening the surface of the third layer by anodic oxidation of the first and third layers using the second layer as a mask.
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Accused Products
Abstract
A method of fabricating a metal electrode of a semiconductor device that includes a substrate with unanodized and anodized metal layers thereon includes the steps of forming a first metal layer, which is anodizable, to a first predetermined thickness on a substrate; forming and patterning a second metal layer, which is not anodizable, to a second predetermined thickness so as to act as a mask on the first metal layer; depositing a third metal layer, that may be anodizable, to a third predetermined thickness; and forming a flat surface on the third layer by anodic oxidation. Various preferred embodiments and relationships between thickness of each layer for flattening by anodic oxidation are also given.
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Citations
5 Claims
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1. A method of fabricating a metal electrode of a semiconductor device comprising the steps of:
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forming a first metal layer, which is anodizable, to a first predetermined thickness on a substrate; forming and patterning a second metal layer, which is not anodizable, to a second predetermined thickness so as to act as a mask on said first metal layer; depositing a third metal layer, that may be anodizable, to a third predetermined thickness and having a nonflat surface; and flattening the surface of the third layer by anodic oxidation of the first and third layers using the second layer as a mask. - View Dependent Claims (2, 3, 4, 5)
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Specification