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Semi-conductor device having circuits on both sides of insulation layer and ultrasonic signal path between the circuits

  • US 5,241,209 A
  • Filed: 07/24/1991
  • Issued: 08/31/1993
  • Est. Priority Date: 07/24/1990
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • an insulation layer having first and second opposite main surfaces;

    a plurality of first, and a plurality of second, ultrasonic transducers respectively formed on the first and second opposite main surfaces of the insulation layer and arranged in a plurality of groups, each group having respectively associated therewith at least one first, and at least one second, ultrasonic transducer, each ultrasonic transducer comprising a layer of piezoelectric material of a selected thickness determining the resonant frequency of the corresponding ultrasonic transducer and the respectively associated first and second ultrasonic transducers of each group having a common thickness, different from the common thickness of the first and second ultrasonic transducers of each other group of the plurality of groups thereof and correspondingly defining, for the plural groups of respectively associated first and second ultrasonic transducers, respective, plural and different operating frequencies;

    a plurality of first, and a plurality of second, integrated circuits respectively corresponding to the plurality of groups of first and second ultrasonic transducers and respectively formed on the first and second main surfaces of the insulation layer, the plurality of first integrated circuits by the insulation layer;

    each first ultrasonic transducer being connected to the respective, first integrated circuit of the corresponding group and transforming an electrical signal having a frequency corresponding to the resonant frequency thereof and applied thereto by the first integrated circuit, to a corresponding ultrasound signal of the same frequency and outputting and transmitting the corresponding ultrasound signal through the insulation layer to the plurality of second ultrasonic transducers; and

    each second ultrasonic transducer being connected to the respective, second integrated circuit of the corresponding group and receiving each ultrasound signal transmitted through the insulation layer from a corresponding first ultrasonic transducer and transforming each received ultrasound signal having a frequency corresponding to the resonant frequency thereof to a corresponding electrical signal of the same frequency and supplying the corresponding electrical signal to the respective second integrated circuit connected thereto.

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