Semi-conductor device having circuits on both sides of insulation layer and ultrasonic signal path between the circuits

• US 5,241,209 A
• Filed: 07/24/1991
• Issued: 08/31/1993
• Est. Priority Date: 07/24/1990
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Fujitsu Limited
• Inventors: Sasaki, Nobuo
• Primary Examiner(s): Crane, Sara W.
• Application Number:
  US07/735,325
• Time in Patent Office: 769 Days
• Field of Search: 357/26, 331/107 A, 257/415, 257/416, 257/417, 257/254, 257/503, 257/506, 257/508, 257/635, 310/336, 333/154
• US Class Current: 257/416
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/73257 Bump and wire connectors
• CPC Class Codes: H01L 23/52 Arrangements for conducting electric current within the device in operation from one component to another , i.e. interconnections, e.g. wires, lead frames optical interconnections G02B6/00
• CPC Class Codes: H01L 23/535 including internal interconnections, e.g. cross-under constructions internal lead connections H01L23/481
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H10N 39/00 Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00

Abstract

A semiconductor device having a semiconductor substrate or an insulation layer, an integrated circuit on each of the opposite sides, or main surfaces, of the semiconductor substrate or insulation layer, and a path for an ultrasound signal interconnecting the integrated circuits. The path is afforded by an ultrasonic transducer on each of the opposite sides of the semiconductor substrate or insulation layer. A plurality of paths may be provided in the same semiconductor substrate or insulation layer without crosstalk by transmitting ultrasound signals having different frequencies through the respective paths. The paths may be one-way or two-way. The ultrasonic transducers each contain a piezoelectric material; the thickness of the piezoelectric material in the ultrasonic transducer, at least on the receiver side in each path, is such that the resonant frequency of the ultrasonic transducer corresponds to the frequency of the ultrasound signal signal transmitted through the path. A plurality of paths through a semiconductor substrate or insulation layer for transmitting corresponding ultrasound signals of the same frequency may be provided between at least one point on one side and more than one point on the other side in a time sharing manner.

Claims

1. A semiconductor device comprising:

an insulation layer having first and second opposite main surfaces;

a plurality of first, and a plurality of second, ultrasonic transducers respectively formed on the first and second opposite main surfaces of the insulation layer and arranged in a plurality of groups, each group having respectively associated therewith at least one first, and at least one second, ultrasonic transducer, each ultrasonic transducer comprising a layer of piezoelectric material of a selected thickness determining the resonant frequency of the corresponding ultrasonic transducer and the respectively associated first and second ultrasonic transducers of each group having a common thickness, different from the common thickness of the first and second ultrasonic transducers of each other group of the plurality of groups thereof and correspondingly defining, for the plural groups of respectively associated first and second ultrasonic transducers, respective, plural and different operating frequencies;

a plurality of first, and a plurality of second, integrated circuits respectively corresponding to the plurality of groups of first and second ultrasonic transducers and respectively formed on the first and second main surfaces of the insulation layer, the plurality of first integrated circuits by the insulation layer;

each first ultrasonic transducer being connected to the respective, first integrated circuit of the corresponding group and transforming an electrical signal having a frequency corresponding to the resonant frequency thereof and applied thereto by the first integrated circuit, to a corresponding ultrasound signal of the same frequency and outputting and transmitting the corresponding ultrasound signal through the insulation layer to the plurality of second ultrasonic transducers; and

each second ultrasonic transducer being connected to the respective, second integrated circuit of the corresponding group and receiving each ultrasound signal transmitted through the insulation layer from a corresponding first ultrasonic transducer and transforming each received ultrasound signal having a frequency corresponding to the resonant frequency thereof to a corresponding electrical signal of the same frequency and supplying the corresponding electrical signal to the respective second integrated circuit connected thereto.

2. A semiconductor device as recited in claim 1, wherein:

each first integrated circuit comprises a high frequency modulator which receives a high frequency carrier wave having a frequency corresponding to the resonant frequency of the corresponding group and which modulates the high frequency carrier wave with the electrical signal applied thereto and supplies the modulated carrier wave signal to the respectively associated, at least one, first ultrasonic transducer; and

each second integrated circuit comprises a high frequency demodulator which receives a high frequency carrier wave having a high frequency corresponding to the operating frequency of the respective group and the corresponding electrical signal, as transformed by the respective, second transducer of the corresponding group and demodulates the corresponding, received electrical signal and produces the demodulated electrical signal as an output signal of the semiconductor device.

3. A semiconductor device as recited in claim 1, wherein each of the pluralities of first and second integrated circuits has first and second terminals, and each of the pluralities of first and second ultrasonic transducers comprises:

a first conductor layer formed on the corresponding main surface of the insulation layer and connected to the first terminal of the corresponding integrated circuit of the respective group;

the layer of piezoelectric material being formed on the first conductive layer; and

a second conductor layer formed on the layer of piezoelectric material and connected to the second terminal of the corresponding integrated circuit of the respective group.

4. A semiconductor device comprising:

an insulation layer having first and second opposite main surfaces;

a plurality of first, and a plurality of second, ultrasonic transducers respectively formed on the first and second opposite main surfaces of the insulation layer and arranged in a plurality of groups, each group having respectively associated therewith at least one first, and at least one second, ultrasonic transducer, each ultrasonic transducer comprising a layer of piezoelectric material of a selected thickness determining the resonant frequency of the corresponding ultrasonic transducer and the respectively associated second ultrasonic transducers of each group having a common thickness, different from the common thickness of the second ultrasonic transducers of each other group of the plurality of groups thereof and correspondingly defining, for the plural groups of respectively associated first and second ultrasonic transducers, respective, plural and different operating frequencies;

a plurality of first, and a plurality of second, integrated circuits respectively corresponding to the plurality of groups of first and second ultrasonic transducers and respectively formed on the first and second main surfaces of the insulation layer, the plurality of first integrated circuits being insulated from the plurality of second insulated circuits by the insulation layer;

each first ultrasonic transducer being connected to the respective, first integrated circuit of the corresponding group and transforming an electrical signal having a frequency corresponding to the resonant frequency thereof and applied thereto by the first integrated circuit, to a corresponding ultrasound signal of the same frequency and outputting and transmitting the corresponding ultrasound signal through the insulation layer to the plurality of second ultrasonic transducers; and

each second ultrasonic transducer being connected to the respective, second integrated circuit of the corresponding group and receiving each ultrasound signal transmitted through the insulation layer from a corresponding first ultrasonic transducer and transforming each received ultrasound signal having a frequency corresponding to the resonant frequency thereof to a corresponding electrical signal of the same frequency and supplying the corresponding electrical signal to the respective second integrated circuit connected thereto.

5. A semiconductor device as recited in claim 4, wherein:

each first integrated circuit comprises a high frequency modulator which receives a high frequency carrier wave having a frequency corresponding to the resonant frequency of the corresponding group and which modulates the high frequency carrier wave with the electrical signal applied thereto and supplies the modulated carrier wave signal to the respectively associated, at least one, first ultrasonic transducer; and

each second integrated circuit comprises a high frequency demodulator which receives a high frequency carrier wave having a high frequency corresponding to the operating frequency of the respective group and the corresponding electrical signal, as transformed by the respective, second transducer of the corresponding group and demodulates the corresponding, received electrical signal and produces the demodulated electrical signal as an output signal of the semiconductor device.

6. A semiconductor device as recited in claim 4, wherein each of the pluralities of first and second integrated circuits has first and second terminals, and each of the pluralities of first and second ultrasonic transducers comprises:

a first conductor layer formed on the corresponding main surface of the insulation layer and connected to the first terminal of the corresponding integrated circuit of the respective group;

the layer of piezoelectric material being formed on the first conductive layer; and

a second conductor layer formed on the layer of piezoelectric material and connected to the second terminal of the corresponding integrated circuit of the respective group.

7. A semiconductor device comprising:

an insulation layer having first and second opposite main surfaces;

a plurality of first, and a plurality of second, ultrasonic transducers respectively formed on the first and second opposite main surfaces of the insulation layer and arranged in a plurality of groups, each group having respectively associated therewith at least one first, and at least one second, ultrasonic transducer, each ultrasonic transducer comprising a layer of piezoelectric material of a selected thickness determining the resonant frequency of the corresponding ultrasonic transducer and the respectively associated first and second ultrasonic transducers of each group having a common thickness, different from the common thickness of the first and second ultrasonic transducers of each other group of the plurality of groups thereof and correspondingly defining, for the plural groups of respectively associated first and second ultrasonic transducers, respective, plural and different operating frequencies;

a plurality of first, and a plurality of second, integrated circuits respectively corresponding to the plurality of groups of first and second ultrasonic transducers and respectively formed on the first and second main surfaces of the insulation layer, the plurality of first integrated circuits being insulated from the plurality of second insulated circuits by the insulation layer;

each first ultrasonic transducer being connected to the respective, first integrated circuit of the corresponding group and;

transforming an electrical signal, having a frequency corresponding to the resonant frequency thereof and applied thereto by the first integrated circuit, to a corresponding ultrasound signal of the same frequency and outputting and transmitting the corresponding ultrasound signal through the insulation layer to the plurality of second ultrasonic transducers, and

receiving each ultrasonic signal transmitted through the insulation layer from a second ultrasonic transducer of the respective group and transforming each such received ultrasound signal having a frequency corresponding to the resonant frequency thereof to a corresponding electrical signal of the same frequency and supplying the corresponding electrical signal to the respective first integrated circuit connected thereto; and

each second ultrasonic transducer being connected to the respective, second integrated circuit of the corresponding group and;

transforming an electrical signal, having a frequency corresponding to the resonant frequency thereof and applied thereto by the second integrated circuit, to a corresponding ultrasound signal of the same frequency and outputting and transmitting the corresponding ultrasound signal through the insulation layer to the plurality of first ultrasonic transducers, and

receiving each ultrasound signal transmitted through the insulation layer from a corresponding first ultrasonic transducer and transforming each received ultrasound signal having a frequency corresponding to the resonant frequency thereof to a corresponding electrical signal of the same frequency and supplying the corresponding electrical signal to the respective second integrated circuit connected thereto.

8. A semiconductor device as recited in claim 7, wherein:

each first integrated circuit comprises;

a high frequency modulator which receives a high frequency carrier wave having a frequency corresponding to the resonant frequency of the corresponding group and which modulates the high frequency carrier wave with the electrical signal applied thereto and supplies the modulated carrier wave signal to the respectively associated, at least one, first ultrasonic transducer, and

a high frequency demodulator which receives a high frequency carrier wave having a high frequency corresponding to the operating frequency of the respective group and the corresponding electrical signal, as transformed by the respective, first transducer of the corresponding group and demodulates the corresponding, received electrical signal and produces the demodulated electrical signal as an output signal of the semiconductor device; and

each second integrated circuit comprises;

a high frequency modulator which receives a high frequency carrier wave having a frequency corresponding to the resonant frequency of the corresponding group and which modulates the high frequency carrier wave with the electrical signal applied thereto and supplies the modulated carrier wave signal to the respectively associated, at least one, second ultrasonic transducer, and

a high frequency demodulator which receives a high frequency carrier wave having a high frequency corresponding to the operating frequency of the respective group and the corresponding electrical signal, as transformed by the respective, first transducer of the corresponding group and demodulates the corresponding, received electrical signal and produces the corresponding demodulated electrical signal.

9. A semiconductor device as recited in claim 8, wherein each of the pluralities of first and second integrated circuits has first and second terminals, and each of the pluralities of first and second ultrasonic transducers comprises:

a first conductor layer formed on the corresponding main surface of the insulation layer and connected to the first terminal of the corresponding integrated circuit of the respective group;

the layer of piezoelectric material being formed on the first conductive layer; and

a second conductor layer formed on the layer of piezoelectric material and connected to the second terminal of the corresponding integrated circuit of the respective group.

10. A semiconductor device comprising:

a semiconductor substrate having first and second opposite main surfaces;

a plurality of first, and a plurality of second, ultrasonic transducers respectively formed on the first and second opposite main surfaces of the semiconductor substrate and arranged in a plurality of groups, each group having respectively associated therewith at least one first, and at least one second, ultrasonic transducer, each ultrasonic transducer comprising a layer of piezoelectric material of a selected thickness determining the resonant frequency of the corresponding ultrasonic transducer and the respectively associated first and second ultrasonic transducers of each group having a common thickness, different from the common thickness of the first and second ultrasonic transducers of each other group of the plurality of groups thereof and correspondingly defining, for the plural groups of respectively associated first and second ultrasonic transducers, respective, plural and different operating frequencies;

a plurality of first, and a plurality of second, integrated circuits respectively corresponding to the plurality of groups of first and second ultrasonic transducers and respectively formed on the first and second main surfaces of the semiconductor substrate;

each first ultrasonic transducer being connected to the respective, first integrated circuit of the corresponding group and transforming an electrical signal having a frequency corresponding to the resonant frequency thereof and applied thereto by the first integrated circuit, to a corresponding ultrasound signal of the same frequency and outputting and transmitting the corresponding ultrasound signal through the semiconductor substrate to the plurality of second ultrasonic transducers; and

each second ultrasonic transducer being connected to the respective, second integrated circuit of the corresponding group and receiving each ultrasound signal transmitted through the semiconductor substrate from a corresponding first ultrasonic transducer and transforming each received ultrasound signal having a frequency corresponding to the resonant frequency thereof to a corresponding electrical signal of the same frequency and supplying the corresponding electrical signal to the respective second integrated circuit connected thereto.

11. A semiconductor device as recited in claim 10, wherein each first integrated circuit comprises a high frequency modulator which receives a high frequency carrier wave having a frequency corresponding to the resonant frequency of the corresponding group and which modulates the high frequency carrier wave with the electrical signal applied thereto and supplies the modulated carrier wave signal to the respectively associated, at least one, first ultrasonic transducer;

and

each second integrated circuit comprises a high frequency demodulator which receives a high frequency carrier wave having a high frequency corresponding to the operating frequency of the respective group and the corresponding electrical signal, as transformed by the respective, second transducer of the corresponding group and demodulates the corresponding, received electrical signal and produces the corresponding demodulated electrical signal.

12. A semiconductor device as recited in claim 10, wherein each of the pluralities of first and second integrated circuits has first and second terminals, first and second insulation layers are formed respectively on the first and second main surfaces of the substrate, and each of the pluralities of first and second ultrasonic transducers comprises:

a first conductor layer formed on the insulating layer on the corresponding main surface of the semiconductor substrate and connected to the first terminal of the corresponding integrated circuit of the respective group;

the layer of piezoelectric material being formed on the first conductive layer; and

a second conductor layer formed on the layer of piezoelectric material and connected to the second terminal of the corresponding integrated circuit of the respective group.

13. A semiconductor device comprising:

a semiconductor substrate having first and second opposite main surfaces;

a plurality of first, and a plurality of second, ultrasonic transducers respectively formed on the first and second opposite main surfaces of the semiconductor substrate and arranged in a plurality of groups, each group having respectively associated therewith at least one first, and at least one second, ultrasonic transducers, each ultrasonic transducer comprising a layer of piezoelectric material of a selected thickness determining the resonant frequency of the corresponding ultrasonic transducer and the respectively associated second ultrasonic transducers of each group having a common thickness, different from the common thickness of the second ultrasonic transducers of each other group of the plurality of groups thereof and correspondingly defining, for the plural groups of respectively associated first and second ultrasonic transducers, respective, plural and different operating frequencies;

a plurality of first, and a plurality of second, integrated circuits respectively corresponding to the plurality of groups of first and second ultrasonic transducers and respectively formed on the first and second main surfaces of the semiconductor substrate;

each first ultrasonic transducer being connected to the respective, first integrated circuit of the corresponding group and transforming an electrical signal having a frequency corresponding to the resonant frequency thereof and applied thereto by the first integrated circuit, to a corresponding ultrasound signal of the same frequency and outputting and transmitting the corresponding ultrasound signal through the semiconductor substrate to the plurality of second ultrasonic transducers; and

each second ultrasonic transducer being connected to the respective, second integrated circuit of the corresponding group and receiving each ultrasound signal transmitted through the semiconductor substrate from a corresponding first ultrasonic transducer and transforming each received ultrasound signal having a frequency corresponding to the resonant frequency thereof to a corresponding electrical signal of the same frequency and supplying the corresponding electrical signal to the respective second integrated circuit connected thereto.

14. A semiconductor device as recited in claim 13, wherein:

each first integrated circuit comprises a high frequency modulator which receives a high frequency carrier wave having a frequency corresponding to the resonant frequency of the corresponding group and which modulates the high frequency carrier wave with the electrical signal applied thereto and supplies the modulated carrier wave signal to the respectively associated, at least one, first ultrasonic transducer; and

each second integrated circuit comprises a high frequency demodulator which receives a high frequency carrier wave having a high frequency corresponding to the operating frequency of the respective group and the corresponding electrical signal, as transformed by the respective, second transducer of the corresponding group and demodulates the corresponding, received electrical signal and produces the demodulated electrical signal as an output signal of the semiconductor device.

15. A semiconductor device as recited in claim 13, wherein each of the pluralities of first and second integrated circuits has fist and second terminals, first and second insulation layers are formed respectively on the first and second main surfaces of the substrate, and each of the pluralities of first and second ultrasonic transducers comprises:

a first conductor layer formed on the insulating layer on the corresponding main surface of the semiconductor substrate and connected to the first terminal of the corresponding integrated circuit of the respective group;

the layer of piezoelectric material being formed on the first conductive layer; and

a second conductor layer formed on the layer of piezoelectric material and connected to the second terminal of the corresponding integrated circuit of the respective group.

16. A semiconductor device comprising:

semiconductor substrate having first and second opposite main surfaces;

a plurality of first, and a plurality of second, ultrasonic transducers respectively formed on the first and second opposite main surfaces of the semiconductor substrate and arranged in a plurality of groups, each group having respectively associated therewith at least one first, and at least one second, ultrasonic transducer, each ultrasonic transducer comprising a layer of piezoelectric material of a selected thickness determining the resonant frequency of the corresponding ultrasonic transducer and the respectively associated first and second ultrasonic transducers of each group having a common thickness, different from the common thickness of the first and second ultrasonic transducers of each other group of the plurality of groups thereof and correspondingly defining, for the plural groups of respectively associated first and second ultrasonic transducers, respective, plural and different operating frequencies;

a plurality of first, and a plurality of second, integrated circuits respectively corresponding to the plurality of groups of first and second ultrasonic transducers and respectively formed on the first and second main surfaces of the semiconductor substrate;

each first ultrasonic transducer being connected to the respective, first integrated circuit of the corresponding group and;

transforming an electrical signal, having a frequency corresponding to the resonant frequency thereof and applied thereto by the first integrated circuit, to a corresponding ultrasound signal of the same frequency and outputting and transmitting the corresponding ultrasound signal through the semiconductor substrate to the plurality of second ultrasonic transducers; and

receiving each ultrasonic signal transmitted through the semiconductor substrate from a second ultrasonic transducer of the respective group and transforming each such received ultrasound signal having a frequency corresponding to the resonant frequency thereof to a corresponding electrical signal of the same frequency and supplying the corresponding electrical signal to the respective first integrated circuit connected thereto; and

each second ultrasonic transducer being connected to the respective, second integrated circuit of the corresponding group and;

transforming an electrical signal, having a frequency corresponding to the resonant frequency thereof and applied thereto by the second integrated circuit, to a corresponding ultrasound signal of the same frequency and outputting and transmitting the corresponding ultrasound signal through the semiconductor substrate to the plurality of first ultrasonic transducers, and

receiving each ultrasound signal transmitted through the semiconductor substrate from a corresponding first ultrasonic transducer and transforming each received ultrasound signal having a frequency corresponding to the resonant frequency thereof to a corresponding electrical signal of the same frequency and supplying the corresponding electrical signal to the respective second integrated circuit connected thereto.

17. A semiconductor device as recited in claim 16, wherein:

each first integrated circuit comprises;

a high frequency modulator which receives a high frequency carrier wave having a frequency corresponding to the resonant frequency of the corresponding group and which modulates the high frequency carrier wave with the electrical signal applied thereto and supplies the modulated carrier wave signal to the respectively associated, at least one, first ultrasonic transducer, and

a high frequency demodulator which receives a high frequency carrier wave having a high frequency corresponding to the operating frequency of the respective group and the corresponding electrical signal, as transformed by the respective, first transducer of the corresponding group and demodulates the corresponding, received electrical signal and produces the demodulated electrical signal as an output signal of the semiconductor device; and

each second integrated circuit comprises;

a high frequency modulator which receives a high frequency carrier wave having a frequency corresponding to the resonant frequency of the corresponding group and which modulates the high frequency carrier wave with the electrical signal applied thereto and supplies the modulated carrier wave signal to the respectively associated, at least one, second ultrasonic transducer, and

a high frequency demodulator which receives a high frequency carrier wave having a high frequency corresponding to the operating frequency of the respective group and the corresponding electrical signal, as transformed by the respective, first transducer of the corresponding group and demodulates the corresponding, received electrical signal and produces the corresponding demodulated electrical signal.

18. A semiconductor device as recited in claim 16, wherein each of the pluralities of first and second integrated circuits has first and second terminals, first and second insulation layers are formed respectively on the first and second main surfaces of the substrate, and each of the pluralities of first and second ultrasonic transducers comprises:

a first conductor layer formed on the insulating layer on the corresponding main surface of the semiconductor substrate and connected to the first terminal of the corresponding integrated circuit of the respective group;

the layer of piezoelectric material being formed on the first conductive layer; and

a second conductor layer formed on the layer of piezoelectric material and connected to the second terminal of the corresponding integrated circuit of the respective group.

19. A semiconductor device comprising:

a semiconductor substrate having first and second opposite main surfaces;

a plurality of first, and a plurality of second, ultrasonic transducers respectively formed on the first and second opposite main surfaces of the semiconductor substrate and arranged in a plurality of groups, each of the plural groups of respectively associated first and second ultrasonic transducers having respective plural and different operating frequencies;

a plurality of first, and a plurality of second, integrated circuits respectively corresponding to the plurality of groups of first and second ultrasonic transducers and respectively formed on the first and second main surfaces of the semiconductor substrate;

each first ultrasonic transducer being connected to the respective, first integrated circuit of the corresponding group and transforming an electrical signal having a frequency corresponding to the operating frequency of the respective group and applied thereto by the first integrated circuit, to a corresponding ultrasound signal of the same frequency and outputting and transmitting the corresponding ultrasound signal through the semiconductor substrate to the plurality of second ultrasonic transducers; and

each second ultrasonic transducer being connected to the respective, second integrated circuit of the corresponding group and receiving each ultrasound signal transmitted through the semiconductor substrate from a corresponding first ultrasonic transducer and transforming each received ultrasound signal having a frequency corresponding to the operating frequency of the respective group to a corresponding electrical signal of the same frequency and supplying the corresponding electrical signal to the respective second integrated circuit connected thereto.

20. A semiconductor device comprising:

a semiconductor substrate having first and second opposite main surfaces;

a plurality of first, and a plurality of second, ultrasonic transducers respectively formed on the first and second opposite main surfaces of the semiconductor substrate and arranged in a plurality of groups, each of the plural groups of respectively associated first and second ultrasonic transducers having respective plural and different operating frequencies;

a plurality of first, and a plurality of second, integrated circuits respectively corresponding to the plurality of groups of first and second ultrasonic transducers and respectively formed on the first and second main surfaces of the semiconductor substrate;

each first ultrasonic transducer being connected to the respective, first integrated circuit of the corresponding group and;

transforming an electrical signal, having a frequency corresponding to the operating frequency of the respective group and applied thereto by the first integrated circuit, to a corresponding ultrasound signal of the same frequency and outputting and transmitting the corresponding ultrasound signal through the semiconductor substrate to the plurality of second ultrasonic transducers, and

receiving each ultrasound signal transmitted through the semiconductor substrate from a corresponding second ultrasonic transducer of the respective group and transforming each such received ultrasound signal, having a frequency corresponding to the operating frequency of the respective group, to a corresponding electrical signal of the same frequency and supplying the corresponding electrical signal to the respective first integrated circuit connected thereto, and

each second ultrasonic transducer being connected to the respective, second integrated circuit of the corresponding group and;

transforming an electrical signal, having a frequency corresponding to the operating frequency of the respective group and applied thereto by the first integrated circuit, to a corresponding ultrasound signal of the same frequency and outputting and transmitting the corresponding ultrasound signal through the semiconductor substrate to the plurality of first ultrasonic transducers, and

each second ultrasonic transducer being connected to the respective, second integrated circuit of the corresponding group and receiving each ultrasound signal transmitted through the semiconductor substrate from a corresponding first ultrasonic transducer and transforming each received ultrasound signal having a frequency corresponding to the operating frequency of the respective group to a corresponding electrical signal of the same frequency and supplying the corresponding electrical signal to the respective second integrated circuit connected thereto.