Double pinned sensor utilizing a tensile film

• US 5,241,864 A
• Filed: 06/17/1992
• Issued: 09/07/1993
• Est. Priority Date: 06/17/1992
• Status: Expired due to Fees

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Addie, David L., Gutteridge, Ronald J., Ristic, Ljubisa
• Primary Examiner(s): Chilcot, Jr., Richard E.
• Assistant Examiner(s): Biegel, Ronald L.
• Application Number:
  US07/899,972
• Time in Patent Office: 447 Days
• Field of Search: 73/862.59, 73/718, 73/724
• US Class Current: 73/718
• CPC Class Codes: B81B 3/0072 For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
• CPC Class Codes: B81C 2201/0167 by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
• CPC Class Codes: G01L 1/148 using semiconductive material, e.g. silicon
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up

Abstract

A double pinned micromachined sensor (11) which utilizes a laminated film (27) having overall tensile strength formed on top of a silicon substrate (16). The laminated film (27) comprises a layer of silicon nitride (18) encapsulated by two layers of polysilicon (19, 21), the silicon nitride (18) providing overall tension for the laminated film. The laminated film (27) is supported above the silicon substrate by support posts (17) and is selectively etched to form a sensor (11, 13).

Claims

1. A double pinned sensor utilizing a tensile film, comprising:

a silicon substrate;

a first silicon nitride layer over the silicon substrate;

a first polysilicon layer over the first silicon nitride layer which is patterned to form a capacitor plate, a conductive path, and a plurality of support areas;

a second polysilicon layer, the second polysilicon layer being heavily doped, over the first polysilicon layer and being supported above the first polysilicon layer by a plurality of support posts bonded to the support areas;

a second silicon nitride layer over the second polysilicon layer;

a third polysilicon layer, the third polysilicon layer being heavily doped, and which totally encloses the second silicon nitride layer between the second polysilicon layer and the third polysilicon layer such that the second polysilicon layer, second silicon nitride layer, and the third polysilicon layer form a conductive laminated film having overall tensile stress which extends across the entire wafer;

a plurality of conductive beams having overall tensile stress and a sensor plate formed by selective etching of the conductive laminated film, the conductive beams serving to support the sensor plate in a predetermined position above the first silicon nitride layer; and

a conductive path which includes the support posts and the conductive beams, the conductive path serving to electrically couple the sensor plate to a plurality of integrated circuit components fabricated on the silicon substrate.

2. A double pinned sensor utilizing a tensile film, comprising:

a silicon substrate;

a first silicon nitride layer over the silicon substrate;

a first polysilicon layer over the first silicon nitride layer which is patterned to form a capacitor plate, a conductive path, and a plurality of support areas;

a second polysilicon layer over the first polysilicon layer and separated from the first polysilicon layer by a plurality of support posts in such a way that a structure is formed which spans a gap of predetermined height;

a second silicon nitride layer over the second polysilicon layer; and

a third layer of polysilicon which encloses the second silicon nitride layer between the second polysilicon layer and the third polysilicon layer such that the second polysilicon layer, second silicon nitride layer, and the third polysilicon layer form a laminated film with overall tensile stress.

3. The double pinned sensor utilizing a tensile film of claim 2 further comprising:

a plurality of beams having a tensile stress which support a sensor plate, the beams and the sensor plate being formed by selective etching of the laminated film.

4. The double pinned sensor utilizing a tensile film of claim 3 further comprising:

a plurality of conductive areas formed from predetermined areas of the second polysilicon layer and the third polysilicon layer, separated by an electrically insulating region fabricated as part of the sensor plate.

5. The double pinned sensor utilizing a tensile film of claim 3 wherein the sensor plate is a rigid structure formed by selective etching of the second silicon nitride layer to remove the second silicon nitride layer from that part of the laminated film which comprises the sensor plate.

6. The double pinned sensor utilizing a tensile film of claim 2 further comprising:

an electrical coupling between the second polysilicon layer and a plurality of integrated circuit components fabricated on the silicon substrate which is provided by one of the support posts making electrical contact to the plurality of integrated circuit components.

7. A method for fabricating a double pinned sensor utilizing a tensile film, comprising:

providing a silicon substrate;

depositing a first layer of silicon nitride over the silicon substrate;

depositing a layer of phosphosilicate glass over the first layer of silicon nitride;

forming a plurality of support openings through the layer of phosphosilicate glass;

forming a contact opening by further extending a predetermined support opening through the first layer of silicon nitride to the silicon substrate;

depositing a second layer of polysilicon over the layer of phosphosilicate glass;

attaching the second layer of polysilicon to the first layer of silicon nitride by a plurality of support posts formed by filling the plurality of support openings with the second layer of polysilicon;

creating an electrical contact between the silicon substrate and the second layer of polysilicon by filling the contact opening with the second layer of polysilicon;

depositing a second layer of silicon nitride over the second layer of polysilicon;

depositing a third layer of polysilicon so as to enclose the second layer of silicon nitride between the second layer of polysilicon and the third layer of polysilicon to form a laminated film having overall tensile stress;

photolithographically patterning the laminated film;

selectively etching the laminated film to form a sensor plate supported by a plurality of beams; and

removing the layer of phosphosilicate glass so the laminated film spans a gap of predetermined height.

8. The method for fabricating the double pinned sensor utilizing a tensile film of claim 7, further comprising:

selectively etching the second layer of silicon nitride to produce a laminated film having predetermined areas of tensile stress and predetermined areas of rigidity.

9. The method for fabricating the double pinned sensor utilizing a tensile film of claim 7, further comprising:

depositing a first layer of polysilicon over the first layer of silicon nitride prior to deposition of the layer of phosphosilicate glass.