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Double pinned sensor utilizing a tensile film

  • US 5,241,864 A
  • Filed: 06/17/1992
  • Issued: 09/07/1993
  • Est. Priority Date: 06/17/1992
  • Status: Expired due to Fees
First Claim
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1. A double pinned sensor utilizing a tensile film, comprising:

  • a silicon substrate;

    a first silicon nitride layer over the silicon substrate;

    a first polysilicon layer over the first silicon nitride layer which is patterned to form a capacitor plate, a conductive path, and a plurality of support areas;

    a second polysilicon layer, the second polysilicon layer being heavily doped, over the first polysilicon layer and being supported above the first polysilicon layer by a plurality of support posts bonded to the support areas;

    a second silicon nitride layer over the second polysilicon layer;

    a third polysilicon layer, the third polysilicon layer being heavily doped, and which totally encloses the second silicon nitride layer between the second polysilicon layer and the third polysilicon layer such that the second polysilicon layer, second silicon nitride layer, and the third polysilicon layer form a conductive laminated film having overall tensile stress which extends across the entire wafer;

    a plurality of conductive beams having overall tensile stress and a sensor plate formed by selective etching of the conductive laminated film, the conductive beams serving to support the sensor plate in a predetermined position above the first silicon nitride layer; and

    a conductive path which includes the support posts and the conductive beams, the conductive path serving to electrically couple the sensor plate to a plurality of integrated circuit components fabricated on the silicon substrate.

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