Dual mode plasma etching system and method of plasma endpoint detection

• US 5,242,532 A
• Filed: 03/20/1992
• Issued: 09/07/1993
• Est. Priority Date: 03/20/1992
• Status: Expired due to Term

• Current Assignee: NXP B.V. (NXP Semiconductors NV)
• Original Assignee: VLSI Technology, Inc. (Koninklijke Philips N.V.)
• Inventors: Cain, John L.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): GOUDREAU, GEORGE A
• Application Number:
  US07/854,527
• Time in Patent Office: 536 Days
• Field of Search: 156/345, 156/643, 156/626, 156/627, 156/653, 204/192.33, 204/298.32, 204/298.03, 204/298.33, 437/7, 437/8
• US Class Current: 216/60
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence

Abstract

A dual mode plasma etching system and method for plasma etching endpoint detection etches a designated layer of a specified material on a substrate without exposing the substrate surface to a high-energy etching plasma. The substrate is prepared for etching by depositing a thin film of a second material distinct from the specified material on the substrate surface. The designated layer of specified material is formed on top of the thin film. Etching of the designated layer in a plasma etching chamber then proceeds while a preferably high level of power is applied to the plasma etching chamber. The dual mode etching system generates an endpoint signal resulting in termination of the high-power etch when the plasma etching chamber begins etching the thin film of second material. Portions of the thin film remaining on the substrate are then removed using a process less damaging to the substrate than etching at high power.

Claims

1. A method of etching a designated layer of a specified material on a substrate, the steps of the method comprising:

depositing a thin sacrificial film of a second material distinct from said specified material on said substrate, wherein said thin sacrificial film functions as a plasma etching process marker;

forming said designated layer of said specified material on top of said thin film, wherein said thin sacrificial film is much thinner than said designed layer of said specified material;

etching said designated layer in a plasma etching chamber while applying a first level of power to said plasma etching chamber;

detecting a first endpoint at which time said plasma etching chamber begins etching said thin film of second material; and

subsequent to said first endpoint detection, ceasing application of said first level of power to said plasma chamber and removing portions of said thin film remaining on said substrate subsequent to said first endpoint detection by using a process less damaging to said substrate than etching in said plasma etching chamber while applying said first level of power to said plasma etching chamber.

2. The method claim 1, said step of removing including

reducing the level of power applied to said plasma etching chamber to a second power level upon detection of said first endpoint;

and

etching said thin film of said second material in said plasma etching chamber while applying said second level of power to said plasma etching chamber;

whereby damage to said substrate is reduced by applying said second power level to said etching chamber prior to completing said etching of said thin film.

3. The method of claim 1, wherein a photolithography masking step is performed between said forming step and said etching step so as to define regions of said designated layer which are to be etched.

4. The method of claim 1, said step of detecting including the steps of:

monitoring the intensity of light in said plasma etching chamber at a predefined wavelength, said predefined wavelength corresponding to light generated within said plasma etching chamber during etching of said thin film;

comparing said monitored light intensity with a threshold level; and

generating an endpoint signal when said monitored light intensity crosses said threshold level.

5. The method of claim 1, said step of detecting including the steps of:

monitoring the intensity of light in said plasma etching chamber at a predefined wavelength, said predefined wavelength corresponding to light generated as a consequence etching said designated layer; and

generating an endpoint signal when said monitored intensity falls below a threshold level.

6. The method of claim 1, said step of detecting including

monitoring the intensity of light in said plasma etching chamber at a predefined wavelength, said predefined wavelength corresponding to light generated as a consequence of etching said thin film;

and

generating an endpoint signal when said monitored intensity increases above a threshold level.

7. The method of claim 1, said step of detecting including

monitoring the intensity of light in said plasma etching chamber at a predefined wavelength, said predefined wavelength being that of light generated in proportion to the concentration of etching reactants within said plasma etching chamber;

and

generating an endpoint signal when said monitored intensity increases above a threshold level.