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Silicon carbide light emitting diode and a method for the same

  • US 5,243,204 A
  • Filed: 05/17/1991
  • Issued: 09/07/1993
  • Est. Priority Date: 05/18/1990
  • Status: Expired due to Term
First Claim
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1. A silicon carbide light emitting diode comprising an n-type silicon carbide single-crystal substrate, a second n-type silicon carbide single-crystal layer formed on the substrate, a first n-type silicon carbide single-crystal layer formed on the second n-type silicon carbide single-crystal layer and a p-type silicon carbide single-crystal layer formed on the first n-type silicon carbide single-crystal layer, whereinthe second n-type layer contains a donor impurity at a concentration of higher than 5×

  • 1016 cm-3, and the first n-type layer contains a donor impurity at a concentration of 5×

    1016 cm-3 or lower.

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