Silicon carbide light emitting diode and a method for the same
First Claim
1. A silicon carbide light emitting diode comprising an n-type silicon carbide single-crystal substrate, a second n-type silicon carbide single-crystal layer formed on the substrate, a first n-type silicon carbide single-crystal layer formed on the second n-type silicon carbide single-crystal layer and a p-type silicon carbide single-crystal layer formed on the first n-type silicon carbide single-crystal layer, whereinthe second n-type layer contains a donor impurity at a concentration of higher than 5×
- 1016 cm-3, and the first n-type layer contains a donor impurity at a concentration of 5×
1016 cm-3 or lower.
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Abstract
There are provided silicon carbide light emitting diodes having a p-n junction which is constituted by a p-type silicon carbide single-crystal layer and an n-type silicon carbide single-crystal layer formed thereon. In cases where light emission caused by recombination of free excitons is substantially utilized, at least a part of the n-type silicon carbide layer adjacent to the interface of the p-n junction is doped with a donor impurity at a concentration of 5×1016 cm-3 or lower. In cases where light emission caused by acceptor-associated recombination is substantially utilized, the p-type silicon carbide layer is doped with an acceptor impurity and at least a part of the n-type silicon carbide layer adjacent to the interface of the p-n junction is doped with a donor impurity at a concentration of 1×1018 cm-3 or higher. Also provided are a method for producing such silicon carbide light emitting diodes and a method for producting another silicon carbide light emitting diode.
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Citations
12 Claims
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1. A silicon carbide light emitting diode comprising an n-type silicon carbide single-crystal substrate, a second n-type silicon carbide single-crystal layer formed on the substrate, a first n-type silicon carbide single-crystal layer formed on the second n-type silicon carbide single-crystal layer and a p-type silicon carbide single-crystal layer formed on the first n-type silicon carbide single-crystal layer, wherein
the second n-type layer contains a donor impurity at a concentration of higher than 5× - 1016 cm-3, and the first n-type layer contains a donor impurity at a concentration of 5×
1016 cm-3 or lower. - View Dependent Claims (2, 3, 4, 5, 6)
- 1016 cm-3, and the first n-type layer contains a donor impurity at a concentration of 5×
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7. A silicon carbide light emitting diode comprising an n-type silicon carbide single-crystal substrate, a second n-type silicon carbide single-crystal layer formed on the substrate, a first n-type silicon carbide single-crystal layer formed on the second n-type silicon carbide single-crystal layer and a p-type silicon carbide single-crystal layer formed on the first n-type silicon carbide single-crystal layer, wherein
the p-type silicon carbide single-crystal layer contains an acceptor impurity, the second n-type layer contains a donor impurity at a concentration of lower than 1× - 1018 cm-3, and the first n-type layer contains a donor impurity at a concentration of 1×
1018 cm-3 or higher. - View Dependent Claims (8, 9, 10, 11, 12)
- 1018 cm-3, and the first n-type layer contains a donor impurity at a concentration of 1×
Specification