Method for depositing thin film on substrate by sputtering process

• US 5,244,556 A
• Filed: 09/19/1991
• Issued: 09/14/1993
• Est. Priority Date: 09/20/1990
• Status: Expired due to Term

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Inoue, Minoru
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US07/762,359
• Time in Patent Office: 726 Days
• Field of Search: 204/192.12, 204/298.09, 204/298.12, 204/298.13
• US Class Current: 204/192.12
• CPC Class Codes: C23C 14/3407 Cathode assembly for sputtering apparatus, e.g. Target
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: H01J 37/3402 using supplementary magnetic fields

Abstract

There is disclosed a method for depositing a thin film on a substrate placed in a chamber by a sputtering process in which a target mounted on a cathode assembly is sputtered under predetermined ambient conditions in the chamber. The method includes the steps of: mounting a target, which is formed of a backing plate and a target plate directly connected to the backing plate, on the cathode assembly, the backing plate having a heat conductivity greater than that of the target plate; heating the target at a predetermined temperature at which residual gases absorbed on the target plate are removed therefrom; and activating the cathode assembly so that the target plate is sputtered. The target can also be formed of a backing plate, a spacer directly connected to the backing plate, and a target plate directly connected to the spacer, the spacer having a melting point greater than that of the target plate.

Claims

1. A method for depositing a thin film on a substrate placed in a chamber by a sputtering process in which a target mounted on a cathode assembly is sputtered under a predetermined ambient condition in the chamber, said method comprising:

(a) mounting the target, which is formed of a backing plate and target plate directly connected to said backing plate, on the cathode assembly, said backing plate having a heat conductivity greater than that of said target plate;

(b) evacuating the chamber and conducting heat through the backing plate of the target to the target plate thereof thereby to heat said target plate to a predetermined temperature at which residual gases absorbed on said target plate are removed therefrom; and

then

(c) activating said cathode assembly to thereby sputter said target plate.

2. A method as claimed in claim 1, further comprising:

heating said target to a temperature greater than 150°

C.

3. A method as claimed in claim 1, further comprising:

heating said target to a temperature less than the melting point temperature of said target plate.

4. A method as claimed in claim 1, wherein said step (c) further comprises:

supplying power from said cathode assembly to said target at a power density of at least 28 W/cm².

5. A method as claimed in claim 1, wherein said step (c) further comprises activating said cathode assembly to thereby sputter said target plate at a temperature less than the melting point temperature of said target plate.

6. A method as claimed in claim 1 further comprising:

(d) supplying a reactive gas to said chamber during the sputtering process thereby to deposit the thin film including a component derived from said reactive gas on said substrate.

7. A method for depositing a thin film on a substrate placed in a chamber by a sputtering process in which a target mounted on a cathode assembly is sputtered under a predetermined ambient condition in the chamber, said method comprising:

(a) mounting the target, which is formed of a backing plate, a spacer directly connected to said backing plate and a target plate directly connected to said spacer, on the cathode assembly, said spacer having a melting point temperature greater than the melting point temperature of said target plate;

(b) evacuating the chamber and conducting heat through the backing plate of the target to the target plate thereof thereby to heat said target plate to a predetermined temperature at which residual gases absorbed on said target plate are removed therefrom; and

then

(c) activating said cathode assembly to thereby sputter said target plate.

8. A method as claimed in claim 7, further comprising:

heating said target to a temperature greater than 150°

C.

9. A method as claimed in claim 7, further comprising:

heating said target to a temperature less than the melting point temperature of said target plate.

10. A method as claimed in claim 7, wherein said step (c) further comprises:

supplying power from said cathode assembly to said target at a power density of at least 28 W/cm².

11. A method as claimed in claim 7, wherein said step (c) further comprises activating said cathode assembly to thereby sputter said target plate at a temperature less than the melting point temperature of said target plate.

12. A method as claimed in claim 7 further comprising:

(d) supplying a reactive gas to said chamber during the sputtering process thereby to deposit the thin film including a component derived from said reactive gas on said substrate.