Organometallic vapor-phase epitaxy process using (CH.sub.3).sub.3 As and CCl.sub.4 for improving stability of carbon-doped GaAs

• US 5,244,829 A
• Filed: 07/09/1992
• Issued: 09/14/1993
• Est. Priority Date: 07/09/1992
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Kim, Tae S.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): DANG, TRUNG Q
• Application Number:
  US07/910,934
• Time in Patent Office: 432 Days
• Field of Search: 437/133, 437/104, 437/107, 437/126, 148/DIG. 110
• US Class Current: 117/104
• CPC Class Codes: H01L 21/02395 Arsenides
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: Y10S 148/11 Metal-organic CVD, ruehrwein type
• CPC Class Codes: Y10S 438/925 Fluid growth doping control, e.g. delta doping

Abstract

The use of trimethylarsine in place of tertiary butyl arsine for low pressure organometallic vapor phase epitaxy of GaAs:C to enhance the carbon doping efficiency of CCl₄. The hole concentration is three times higher with trimethylarsine then with tertiary butyl arsine in the layer grown under similar conditions. As a result, higher growth temperatures can be used with trimethyl arsine, yielding more stable carbon doping. Annealing at 650° C. for 5 minutes does not degrade the trimethyl arsine-grown layers while the tertiary butyl arsine-grown layer shows decreases in both hole concentration and mobility. Also a high level of hydrogen atoms is detected in tertiary butyl arsine-grown GaAs:C. The hydrogen level is about 30 times lower in the layers grown with trimethyl arsine. The reduced hydrogen concentration is an added advantage of using trimethyl arsine since hydrogen is known to neutralize acceptors in GaAs to reduce the carrier concentrations.

Claims

1. A method of fabricating a carbon doped layer of a group III-V compound comprising the steps of:

(a) providing a stream of gaseous atomic hydrogen-free precursors of a predetermined group III-V semiconductor compound and a carbon halide having one carbon atom;

(b) providing a chamber containing a group III-V substrate; and

(c) causing said stream to deposit the carbon-doped group III-V compound based upon said precursors on said substrate in said chamber.

2. The method of claim 1 wherein the pressure in said chamber is from about 10 to about 760 and the temperature is from about 450°

C. to about 800°

C.

3. The method of claim 1 wherein said carbon halide is carbon tetrachloride.

4. The method of claim 2 wherein said carbon halide is carbon tetrachloride.

5. The method of claim 1 wherein said carbon-doped group III-V compound is GaAs and one of said precursors is trimethyl arsine.

6. The method of claim 2 wherein said carbon-doped group III-V compound is GaAs and one of said precursors is trimethyl arsine.

7. The method of claim 3 wherein said carbon-doped group III-V compound is GaAs and one of said precursors is trimethyl arsine.

8. The method of claim 4 wherein said carbon-doped group III-V compound is GaAs and one of said precursors is trimethyl arsine.

9. The method of claim 1 wherein said carbon-doped group III-V compound is GaAs and one of said precursors is trimethyl gallium.

10. The method of claim 2 wherein said carbon-doped group III-V compound is GaAs and one of said precursors is trimethyl gallium.

11. The method of claim 3 wherein said carbon-doped group III-V compound is GaAs and one of said precursors is trimethyl gallium.

12. The method of claim 4 wherein said carbon-doped group III-V compound is GaAs and one of said precursors is trimethyl gallium.

13. The method of claim 5 wherein the other of said precursors is trimethyl gallium.

14. The method of claim 6 wherein the other of said precursors is trimethyl gallium.

15. The method of claim 7 wherein the other of said precursors is trimethyl gallium.

16. The method of claim 8 wherein the other of said precursors is trimethyl gallium.

17. The method of claim 1 wherein said carbon-doped compound is AlGaAs and the precursors thereof are trimethyl arsine, trimethyl gallium and trimethyl aluminum.

18. The method of claim 2 wherein said carbon-doped compound is AlGaAs and the precursors thereof are trimethyl arsine, trimethyl gallium and trimethyl aluminum.

19. The method of claim 3 wherein said carbon-doped compound is AlGaAs and the precursors thereof are trimethyl arsine, trimethyl gallium and trimethyl aluminum.

20. The method of claim 4 wherein said carbon-doped compound is AlGaAs and the precursors thereof are trimethyl arsine, trimethyl gallium and trimethyl aluminum.