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Semiconductor device

  • US 5,244,834 A
  • Filed: 08/24/1992
  • Issued: 09/14/1993
  • Est. Priority Date: 10/05/1989
  • Status: Expired due to Term
First Claim
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1. A method of producing a semiconductor device for detecting a strength of a magnetic field, comprising the steps of:

  • a first step of forming a semiconductor wafer with a face orientation of (100);

    a second step of forming an active layer of a Group III and V element compound semiconductor on said semiconductor wafer and having a face orientation of (100);

    a third step of forming a first pair of convex portions of a generally convex shape, a second pair of convex portions and a crossing portion from said active layer by an etching using a predetermined etching substance so that a first convex portion of each pair is opposite to a second convex portion thereof and so that a same crystalline face which is one of 011, 011, or 011, of said crossing portion is exposed at all points where said first pair of convex portions crosses said second pair of convex portions and is set at an angle 90·

    ±

    β

    ·

    tan;

    β

    =1/3, and at least one of said convex portions including at least one mesa-shaped portions; and

    a fourth step of forming a pair of input terminals and a pair of output terminals which are electrically connected to each convex portion of said first pair and said second pair, respectively so as to input electric current to said each convex portion of said first pair and to output voltage generated in said active layer in response to a magnetic field strength.

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