Semiconductor device

• US 5,244,834 A
• Filed: 08/24/1992
• Issued: 09/14/1993
• Est. Priority Date: 10/05/1989
• Status: Expired due to Term

• Current Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Original Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Inventors: Awano, Namoi, Inuzka, Hajime, Hoshino, Kouichi, Suzuki, Yasutoshi
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): Picardat, Kevin M.
• Application Number:
  US07/933,704
• Time in Patent Office: 386 Days
• Field of Search: 437/184, 437/185, 437/918, 437/2
• US Class Current: 438/48
• CPC Class Codes: H01L 27/0605 integrated circuits made of compound material, e.g. AIIIBV
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

A Group III and V element compound semiconductor such as gallium arsenide is formed on a semiconductor wafer by so-called MOCVD. A first pair of convex portions, a second pair of convex portions and crossing portion are formed from such compound semiconductor by an etching using a predetermined etching substance so that one convex portion of each pair is opposite to the other convex portion thereof and that a same crystalline surface of the crossing portion is exposed at all points where the first pair of convex portions crosses the second pair of convex portions. A pair of input terminals and a pair of output terminals are electrically connected to each convex portion of the first pair and the second pair, respectively so as to input electric current to each convex portion of the first pair and to output voltage generated in response to a magnetic field strength in such compound semiconductor. Accordingly, the occurrence of the unbalanced voltage is prevented because of the geometrical balance of two pair convex portions and crossing portion.

Claims

1. A method of producing a semiconductor device for detecting a strength of a magnetic field, comprising the steps of:

a first step of forming a semiconductor wafer with a face orientation of (100);

a second step of forming an active layer of a Group III and V element compound semiconductor on said semiconductor wafer and having a face orientation of (100);

a third step of forming a first pair of convex portions of a generally convex shape, a second pair of convex portions and a crossing portion from said active layer by an etching using a predetermined etching substance so that a first convex portion of each pair is opposite to a second convex portion thereof and so that a same crystalline face which is one of 011, 011, or 011, of said crossing portion is exposed at all points where said first pair of convex portions crosses said second pair of convex portions and is set at an angle 90·

±

β

·

tan;

β

=1/3, and at least one of said convex portions including at least one mesa-shaped portions; and

a fourth step of forming a pair of input terminals and a pair of output terminals which are electrically connected to each convex portion of said first pair and said second pair, respectively so as to input electric current to said each convex portion of said first pair and to output voltage generated in said active layer in response to a magnetic field strength.

2. A method of producing a semiconductor device according to claim 1, wherein said etching substance includes a mixture of sulfuric acid and hydrogen peroxide whose volume is smaller than a volume of said sulfuric acid.

3. A method of producing a semiconductor device according to claim 1, wherein said etching substance is set as follows:

space="preserve" listing-type="equation">H.sub.2 SO.sub.4 ;

H.sub.2 O.sub.2 ;

H.sub.2 O=20 ;

1 ;

20

4. A method of producing a semiconductor device according to claim 1, wherein said third step includes the step of forming said first pair of convex portion and said second pair of convex portions so that a ratio of a width of said convex portion of second pair to a length l of said first pair is equal to or less than 0.23.

5. A method of producing a semiconductor device according to claim 1, wherein said third step including the step of forming said first pair of convex portion and said second convex portion so that a ratio of a width (w) of said convex portion of first pair to a length (w'"'"') of said second pair is equal to or less than 0.26.