Bond inspection technique for a semiconductor chip

• US 5,246,291 A
• Filed: 06/01/1992
• Issued: 09/21/1993
• Est. Priority Date: 06/01/1992
• Status: Expired due to Fees

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Wang, Shay-Ping T., Lebeau, Christopher J., Ogden, Paul A.
• Primary Examiner(s): Cuchlinski, Jr., William A.
• Assistant Examiner(s): WORTH, WILLIE M
• Application Number:
  US07/891,002
• Time in Patent Office: 477 Days
• Field of Search: 374/4, 374/5, 374/124, 374/137, 228/103, 228/104
• US Class Current: 374/5
• CPC Class Codes: G01N 25/72 Investigating presence of flaws

Abstract

A bond inspection technique which determines the integrity of a plurality of package leads (13) bonded to a plurality of contact areas (12) on a semiconductor chip (11). A bonding process heats each package lead (13) bonded to each contact area (12). A camera (16) forms an infra-red intensity image at a predetermined time of the semiconductor chip (11) and ports image data to a computer (18). Infra-red intensity radiated from each bond on the semiconductor chip (11) is compared by the computer (18) with infra-red intensity data of known good and bad bonds. The comparison of each bond determines bond integrity of the semiconductor chip (11).

Claims

1. A bond inspection technique for evaluating the bond interface between a plurality of leads bonded to respective contact pads on a semiconductor chip, comprising:

initially heating the plurality of leads and bond interfaces to allow heat across the bond interfaces between the leads and the contact pads to be dissipated via the contact pads to the semiconductor chip;

producing at least one thermal intensity map of the semiconductor chip using a camera sensitive to infra-red radiation, said at least one thermal intensity map being indicative of the heat transferred through the bond interfaces wherein the heat transfer is a function of the integrity of the bond interface itself; and

inspecting said at least one thermal intensity map and comparing it against similar data at known good bond interfaces of a similar semiconductor chip to determine the quality of the bond interfaces of the semiconductor chip being evaluated.

2. The bond inspection technique of claim 1 wherein each bond to be evaluated on the semiconductor chip is heated to substantially similar temperatures.

3. The bond inspection technique of claim 1, wherein heating is by a laser and wherein each bond to be evaluated on the semiconductor chip is heated to substantially similar temperatures.

4. The bond inspection technique of claim 1, wherein a CCD camera is used having any infra-red filter removed from said CCD camera.

5. The bond inspection technique of claim 1, further including producing a plurality of thermal intensity maps using said camera, each thermal intensity map being generated at a different predetermined time to show a rate of change in heat transfer through each bond.

6. A method for simultaneously characterizing a plurality of package lead bonds on a semiconductor chip comprising:

initially heating a plurality of package leads and their respective bonds on the semiconductor chip for a predetermined time;

placing the plurality of package leads and the semiconductor package in the field of view of a camera sensitive to infra-red radiation;

generating a thermal intensity map of said plurality of package lead bonds and the semiconductor chip as heat is transferred therebetween from data output by said camera, said thermal intensity map indicating the heat transferred through each bond interface between said plurality of package leads and the semiconductor chip; and

comparing said thermal intensity map to data of substantially similar semiconductor chips with known package lead bond conditions.

7. The method of claim 6 wherein initial heating comprises

using heat generated during a bonding process for bonding the plurality of leads to the semiconductor chip to promote heat transfer through each bond interface.

8. The method of claim 6 wherein initial heating comprises:

heating an area of the package leads near each bond interface with a laser to promote heat transfer through each bond interface.

9. The method of claim 6 further including:

using a CCD camera with infra-red filters removed as said camera.

10. The method of claim 6 wherein the step of comparing comprises:

comparing said thermal intensity map to data of substantially similar semiconductor chips with known bond conditions using a computer.

11. The method of claim 6 further including:

generating a plurality of thermal intensity maps of the semiconductor chip from data output by said camera, each thermal intensity map being generated at a predetermined time;

using said plurality of thermal intensity maps to show a rate of change of thermal intensity at each bond;

and using said rate of change thermal intensity at each bond to determine bond quality.

12. A method for inspecting the integrity of a plurality of package leads bonded to a semiconductor chip, comprising:

focusing a camera sensitive to infra-red radiation on the plurality of package leads and the semiconductor chip;

causing heat transfer through each bond interface between the plurality of leads and the semiconductor chip;

generating a thermal intensity map of the semiconductor chip and leads fro data output from said camera, said thermal intensity map showing heat transferred through each bond interface; and

inspecting and comparing said thermal intensity map against substantially similar semiconductor chip data with known package lead bond conditions.

13. The method of claim 12 wherein said causing heat transfer step includes using heat generated during a package lead bonding process to cause heat transfer through each bond interface.

14. The method of claim 12 wherein said causing heat transfer step includes heating an area of the plurality of package leads near each bond with a laser to cause heat transfer through each bond interface.

15. The method of claim 12 wherein said generating a thermal intensity map step includes generating a plurality of thermal intensity maps at predetermined times to determine a rate of change of heat transfer through each bond interface.

16. The method of claim 12 wherein said comparing and inspecting step includes using a computer to compare said thermal intensity map to substantially similar semiconductor chip data with known package lead bond conditions.