Heterojunction bipolar transistor

• US 5,247,192 A
• Filed: 06/19/1992
• Issued: 09/21/1993
• Est. Priority Date: 09/30/1991
• Status: Expired due to Term

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Nii, Keita
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): FAHMY, WAEL M
• Application Number:
  US07/901,630
• Time in Patent Office: 459 Days
• Field of Search: 357/34, 357/35, 357/16, 357/2
• US Class Current: 257/77
• CPC Class Codes: H01L 29/66068 the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
• CPC Class Codes: H01L 29/7375 having an emitter comprising one or more non-monocrystalline elements of group IV, e.g. amorphous silicon, alloys comprising group IV elements

Abstract

A heterojunction bipolar transistor comprising a semiconductor substrate of a first conductive-type, a first conductive-type layer of 3c-SiC, a second conductive-type layer of Si and another first conductive-type layer of 3c-SiC. The two first conductive-type layers serve respectively as collector region and emitter region and the second conductive-type layer serves as base region, and a method for producing the same. A transistor of the present invention is effective for devices such as I² L circuit wherein reverse directional operation of transistor is utilized.

Claims

1. A heterojunction bipolar transistor wherein:

on a semiconductor substrate of a first conductive-type, a first conductive-type layer of 3c-SiC, a second conductive-type layer of Si and another first conductive-type layer 3c-SiC are formed in this order so that the two first conductive-type layers serve respectively as collector region and emitter region and the second conductive-type layer serves as base region, and wherein an electrically conductive film is sandwiched between insulating films and is connected with a side wall of the second conductive-type layer, and a base electrode is connected with the electrically conductive film.