Magnetic field sensing device

• US 5,247,278 A
• Filed: 11/26/1991
• Issued: 09/21/1993
• Est. Priority Date: 11/26/1991
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Pant, Bharat B., Fryer, Richard B., Krahn, Donald R.
• Primary Examiner(s): Lateef, Marvin M.
• Application Number:
  US07/797,872
• Time in Patent Office: 665 Days
• Field of Search: 338/32 R, 338/32 H, 324/207.21, 324/207.2, 324/249, 324/251, 324/252, 324/260, 335/296, 335/302, 335/304, 335/306
• US Class Current: 338/32.00R
• CPC Class Codes: G01R 33/09 Magnetoresistive devices
• CPC Class Codes: G01R 33/096 anisotropic magnetoresistance sensors

Abstract

A self-contained magnetic field sensing device which has magnetic field sensing elements arranged in an electrical bridge network. An integral electrical conductor spaced from the sensing elements carries a current for setting and resetting the direction of magnetization of the sensing elements. A known magnetic field useful for test set up and calibration is provided at the sensing elements by a second integral electrical conductor.

Claims

1. An integrated device for sensing external magnetic fields comprising:

magnetic field sensing means having at least first and second magnetic field sensing elements and an output terminating region, said magnetic field sensing means being arranged to be sensitive to magnetic field components in a first direction and to provide an output signal at said output terminating region;

means for setting a direction of magnetization in said first magnetic field sensing element in a second direction and for setting a direction of magnetization in said second magnetic field sensing element in a third direction with said magnetic field sensing means providing an output signal at a first level; and

for reversing said directions of magnetization in said first and second magnetic field sensing elements with said magnetic field sensing means then providing an output signal at a second level with the difference between said first output signal at a first level and said second output signal at a second level being representative of said external magnetic field components in a first direction.

2. The integrated device of claim 1 wherein said first and second magnetic field sensing elements lie in a first plane and said means for setting and for reversing said directions of magnetization comprises a first electrical conductor means lying in a second plane spaced from said first plane, with said first conductor means adapted to conduct an electrical current in a direction whereby said direction of magnetization in said first magnetic field sensing element is set in a second direction and said direction of magnetization in said second magnetic sensing element is set in a third direction, and reversing said direction of said first current.

3. The integrated device of claim 2 wherein said first electrical conductor means is a metallic current strap.

4. The integrated device of claim 3 wherein said metallic current strap has a spiral form.

5. The integrated device of claim 2 wherein said integrated device is formed on a silicon substrate and said first electrical conductor means is an implant layer in said silicon substrate.

6. The integrated device of claim 2 wherein said integrated device is formed on a silicon substrate and said first electrical conductor means is said silicon substrate.

7. The integrated device of claim 2 wherein said integrated device is formed on a conducting substrate and said first electrical conductor means is said conducting substrate.

8. The integrated device of claim 2 further comprising a device package wherein said first electrical conductive means is a current strap located in said device package.

9. The integrated device of claim 2 wherein said direction of magnetization in said first magnetic field sensing element is opposite said direction of magnetization in said second magnetic field sensing element.

10. The integrated device of claim 1 further comprising means for producing a magnetic field in said first direction at said magnetic field sensing means.

11. The integrated device of claim 10 wherein said means for producing a magnetic field comprises a second electrical conductor means lying in a third plane spaced from said first plane, with said second electrical conductor means adapted to conduct a second electrical current in a direction perpendicular to said first direction.

12. The integrated device of claim 11 wherein said second electrical conductor means is in the form of a current strap parallel to said first direction.

13. The integrated device of claim 10 wherein said integrated device is formed on a substrate and said second electrical conductor means is an implant layer in said silicon substrate.

14. The integrated device of claim 10 wherein said integrated device is formed on a conducting substrate and said second electrical conductor means is said conducting substrate.

15. A device for sensing an external magnetic field in a first direction, comprising:

magnetic field sensing means having first, second, third, and fourth magnetoresistive elements, each of said magnetoresistive elements having first and second terminating regions, said first magnetoresistive element first terminating region being connected to said third magnetoresistive element first terminating region, said first magnetoresistive element second terminating region being connected to said second magnetoresistive element second terminating region, said third magnetoresistive element second terminating region being connected to said fourth magnetoresistive element second terminating region and said second magnetoresistive element first terminating region connected to said fourth magnetoresistive element first terminating region;

means for producing a magnetic field in said first direction at said magnetoresistive elements;

means for setting a second direction of magnetization in said first and third magnetic sensing elements and for setting a third direction of magnetization in said second and fourth magnetic sensing elements with said magnetic field sensing means providing an output signal at a first level, and for reversing said directions of magnetization in said first and third magnetic sensing elements and in said second and fourth magnetic sensing elements with said magnetic field sensing means then providing an output signal at a second level with the difference between said first output signal at a first level and said second output signal at a second level being representative of external magnetic field components in a first direction.

16. The device of claim 15 wherein said magnetoresistive elements lie in a first plane and said means for producing a magnetic field in said first direction comprises a first electrical conductor means lying in a second plane spaced from said first plane.

17. The device of claim 15 wherein said device is formed on a substrate and said first electrical conductor means is an implant layer in said substrate.

18. The device of claim 15 wherein said device is formed on a conducting substrate and said first electrical conductor means is said electrical substrate.

19. This device of claim 15 further comprising a device package wherein said first electrical conductor means is a current strap located in said device package.

20. The device of claim 15 further comprising a second device of claim 15 wherein said second device is located to sense an external magnetic field in a fourth direction and said fourth direction is perpendicular to said first direction, said device being useful in a compass application.