Electrically erasable progammable read-only memory with nand cell blocks

• US 5,247,480 A
• Filed: 10/09/1991
• Issued: 09/21/1993
• Est. Priority Date: 05/02/1989
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Masuoka, Fujio, Tanaka, Tomoharu, Iwata, Yoshihisa, Momodomi, Masaki, Itoh, Yasuo
• Primary Examiner(s): Popek, Joseph A.
• Application Number:
  US07/773,723
• Time in Patent Office: 713 Days
• Field of Search: 365/104, 365/184, 365/185, 365/189.09, 365/189.11, 365/211
• US Class Current: 365/185.17
• CPC Class Codes: G11C 16/08 Address circuits; Decoders; Word-line control circuits
• CPC Class Codes: G11C 16/12 Programming voltage switching circuits
• CPC Class Codes: G11C 16/30 Power supply circuits

Abstract

An electrically erasable programmable read-only memory has memory cell blocks, each of which has NAND type cell units associated with the bit lines respectively. Each cell unit has a series-circuit of floating gate type memory cell transistors and a selection transistor provided between the corresponding bit line and the series-circuit of memory cell transistors. A row decoder is provided in common to the memory cell blocks, for generating an "H" level voltage which is supplied to a selection gate control line connected to the selection transistor and to a selected word line or lines in a cell unit. A voltage boost circuit is provided for every memory cell block, for causing the "H" level voltage to increase up to a preselected potential level which is high enough to render the cell transistors conductive. The voltage boost circuit includes a first booster section for the selection gate control line, and a second section for the word lines. The second section operates in response to the output voltage of the first section.

Claims

1. A non-volatile semiconductor device comprising:

a substrate;

data transmission lines arranged on said substrate;

a memory cell section connected to said data transmission lines, said memory cell section including a plurality of memory cell units each of which has a series-circuit of data storage transistors and a switching transistor, each of said data storage transistors having a charge storage layer and a control gate;

decoder means connected to said memory cell section, for generating a first voltage which represents a "high" potential level; and

voltage controller means connected to said data storage transistors, for generating a second voltage in response to the first voltage, said second voltage having a voltage potential high enough to render the data storage transistors conductive.

2. The device according to claim 1, wherein said voltage controller means comprises means for applying a third voltage to the switching transistor, which is then rendered conductive, in response to the first voltage.

3. The device according to claim 1, further comprising:

a further memory cell section connected to said data transmission lines and including a plurality of memory cell units each of which has a series-circuit of data storage transistors and a switching transistor, each of said data storage transistors having a charge storage layer and a control gate; and

said decoder means being connected in common to the memory cell sections.

4. The device according to claim 3, wherein said voltage controller means is also connected to said switching transistor and comprises:

first voltage generator means connected to the switching transistor, for detecting that the first voltage is supplied to said switching transistor, and for generating a third voltage which is supplied to said switching transistor to render the switching transistor conductive in response to detecting that the first voltage is supplied to said switching transistor; and

second voltage generator means connected to the data storage transistors at the control gates thereof and to said first voltage generator means, for applying to said switching transistors the second voltage in response to the third voltage of said first voltage generator means.

5. The device according to claim 4, wherein said data storage transistors comprise floating gate tunneling metal insulator semiconductor field effect transistors.

6. An erasable and programmable read-only memory comprising:

a semiconductor substrate;

bit lines and word lines arranged on said substrate to insulatively intersect each other thereby defining cross points therebetween;

memory cell transistors provided at the cross points, said memory cell transistors being grouped into a plurality of memory subsections each of which comprises cell units each of which has a number of series-connected memory cell transistors, said memory cell transistors having control gates and data storage layers;

switch means for selectively connecting said cell units to the corresponding bit lines;

row decoder means connected to said word lines and said switch means, for selectively designating one or some of said word lines as selected word lines by generating an "H" level voltage supplied thereto; and

voltage control means associated with said memory cell transistors, for generating a voltage which is potentially greater than the "H" level voltage and which renders the transistors conductive, and for supplying said voltage to the selected word lines.

7. The memory according to claim 6, wherein said voltage control means comprises:

voltage increment means for causing the "H" level voltage to be increased up to said voltage which renders the transistors conductive.

8. The memory according to claim 6, wherein said voltage control means comprises:

first driver means for electrically driving said switch means to cause said switch means to turn on; and

second driver means coupled to said first driver means, for electrically activating said word selected lines to cause carriers to tunnel between the data storage layers and said substrate in the memory cell transistors connected to said selected word lines.

9. The memory according to claim 8, wherein said first driver means uses said voltage to turn on said switch means.

10. The memory according to claim 8, wherein said second driver means uses said voltage to cause carriers to tunnel between the data storage layers and said substrate in the memory cell transistors connected to said selected lines.

11. The memory according to claim 8, wherein said switch means comprises insulated gate field effect transistors associated with said cell units respectively.