Method for producing solar cell devices of crystalline material

• US 5,248,621 A
• Filed: 10/18/1991
• Issued: 09/28/1993
• Est. Priority Date: 10/23/1990
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Sano, Masafumi
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US07/778,669
• Time in Patent Office: 711 Days
• Field of Search: 148/DIG. 12, 148/DIG. 135, 148/DIG. 138, 136/256, 136/258, 136/260-264, 437/3, 437/83, 437/86, 437/101, 437/974, 437/977
• US Class Current: 438/64
• CPC Class Codes: H01L 31/02363 of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 117/915 Separating from substrate
• CPC Class Codes: Y10S 148/012 Bonding, e.g. electrostatic for strain gauges

Abstract

A solar cell device is produced by forming at least one semiconductor layer of single crystalline material having an uneven surface on a substrate. A photovoltaic element utilizing the semiconductor layer is formed and bonded to another substrate. The produced solar cell device has a large area, high conversion efficiency and may be mass produced at low cost.

Claims

1. A method for producing a solar cell device, said method comprising the steps of:

forming on a first substrate at least one semiconductor layer made of a single crystalline material and having an uneven surface;

forming a photovoltaic element utilizing the semiconductor layer; and

bonding the photovoltaic element to a second substrate.

2. A method according to claim 1, wherein the first substrate is made of a single crystal semiconductor.

3. A method according to claim 1, wherein the first substrate has a surface of a non-crystalline material.

4. A method according to claim 1, wherein the first substrate has an uneven surface, and the uneven surface of the semiconductor layer has a shape corresponding to the uneven surface of the first substrate.

5. A method according to claim 1, wherein the first substrate has a substantially flat surface, and the uneven surface of the semiconductor layer has a plurality of crystal surfaces.

6. A method according to claim 1, wherein the photovoltaic element comprises a PN junction or a PIN junction.

7. A method according to claim 1, wherein the photovoltaic element is formed on the single crystalline semiconductor layer having the uneven surface by crystal growth of a semiconductor layer of a conduction type different from that of the single crystalline semiconductor layer having the uneven surface.

8. A method according to claim 1, wherein said photovoltaic element is formed by diffusing dopants in a part of the semiconductor layer.

16. A method according to claim 1, wherein the substrate having the uneven surface is used a plurality of times in order to produce a plurality of the solar cell devices.

9. A method for producing a solar cell device, said method comprising the steps of:

forming a thin film insulating layer on a surface of a substrate formed into a structure having an uneven surface;

forming a first conductive layer substantially made of a single crystal, on the substrate which is disposed in a film-forming space for forming a deposited film, by a chemical reaction between an active species (A) produced by decomposing a compound containing silicon and halogen and an active species (B) having chemical interaction with the active species (A) and produced by a chemical substance used for forming a film, the active species (A) and (B) being simultaneously or separately introduced;

forming a second conductive layer substantially made of a single crystal on the first substantially single crystal conductive layer by the same method as that employed for forming the first substantially single crystal conductive layer; and

separating the first and second substantially single crystal conductive layers from the surface of the substrate having the uneven surface.

10. A method according to claim 9, wherein the substrate having the uneven surface is used a plurality of times in order to produce a plurality of the solar cell devices.

11. A method for producing a solar cell device, said method comprising the steps of:

forming on a first substrate at least one semiconductor body made of a single crystalline material and having an uneven surface;

forming a photovoltaic junction utilizing the semiconductor body;

bonding the semiconductor body to a second substrate; and

separating the semiconductor body from the first substrate.

12. A method according to claim 11, further comprising the step of forming an electrode on the semiconductor body which is bonded to the second substrate.

13. A method according to claim 11, wherein the photovoltaic junction is formed in the semiconductor body.

14. A method according to claim 11, wherein the photovoltaic junction is formed on the semiconductor body.

15. A method according to claim 11, wherein said step of forming the semiconductor body comprises a step of forming a plurality of laterally spaced thin insulating films between the semiconductor body and the first substrate.