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Rapid plasma hydrogenation process for polysilicon MOSFETs

  • US 5,250,444 A
  • Filed: 02/21/1992
  • Issued: 10/05/1993
  • Est. Priority Date: 02/21/1992
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor device which comprises the steps of(a) providing a semiconductor body capable of undergoing hydrogen in-diffusion and hydrogen out-diffusion at selected temperatures;

  • (b) subjecting said semiconductor body to plasma hydrogenation to effect in-diffusion of atomic hydrogen, said in-diffusion being effected at a hydrogenation temperature that is higher than the out-diffusion temperature at which a substantial amount of hydrogen escapes from said semiconductor body; and

    (c) maintaining said hydrogenation plasma while said semiconductor body is cooled to a temperature at which out-diffusion is substantially avoided.

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