Method of producing semiconductor substrate
First Claim
1. A method of producing a semiconductor substrate, comprising the steps of:
- forming pores in the entire body of a single-crystal silicon substrate by anodization;
epitaxially growing a single-crystal silicon layer on a surface of the porous single-crystal silicon substrate having many pores;
sticking a supporting substrate of a desired kind to the surface of the epitaxial layer of single-crystal silicon by using an adhesive of a desired kind therebetween;
selectively etching said porous single-crystal silicon substrate;
sticking said epitaxial layer fast to a transparent insulating substrate containing SiO2 as a main constituent;
separating said supporting layer from said epitaxial layer by removing said adhesive; and
heat-treating the epitaxial layer stuck fast on said transparent insulating layer.
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Abstract
A method of producing a semiconductor substrate, comprises the steps of: forming pores in the entire body of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on a surface of the porous single-crystal silicon substrate; sticking a supporting substrate to the surface of the epitaxial layer of single-crystal silicon by using an adhesive; selectively etching the porous single-crystal silicon substrate; sticking the epitaxial layer fast to a transparent insulating substrate containing SiO2 as a main constituent; separating the supporting layer from the epitaxial layer by removing the adhesive; and heat-treating the epitaxial layer stuck fast on the transparent insulating layer. Alternatively, a porous layer is formed in a surface portion of a single-crystal silicon substrate, and then, the non-porous portion is removed before the porous layer is selectively etched.
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Citations
4 Claims
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1. A method of producing a semiconductor substrate, comprising the steps of:
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forming pores in the entire body of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on a surface of the porous single-crystal silicon substrate having many pores; sticking a supporting substrate of a desired kind to the surface of the epitaxial layer of single-crystal silicon by using an adhesive of a desired kind therebetween; selectively etching said porous single-crystal silicon substrate; sticking said epitaxial layer fast to a transparent insulating substrate containing SiO2 as a main constituent; separating said supporting layer from said epitaxial layer by removing said adhesive; and heat-treating the epitaxial layer stuck fast on said transparent insulating layer. - View Dependent Claims (3, 4)
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2. A method of producing a semiconductor substrate, comprising the steps of:
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forming pores in a surface layer at one side of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on the external surface of the porous silicon layer having many pores formed as above; sticking a supporting substrate of a desired kind to the surface of the epitaxial layer of single-crystal silicon by using an adhesive of a desired kind therebetween; removing the non-porous silicon portion of said single-crystal silicon substrate by grinding; selectively etching said porous silicon layer; sticking said epitaxial layer fast to a transparent insulating substrate containing SiO2 as a main constituent; separating said supporting layer from said epitaxial layer by removing said adhesive; and heat-treating the epitaxial layer stuck fast on said transparent insulating layer.
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Specification