Active matrix panel having display and driver TFT's on the same substrate
First Claim
Patent Images
1. An active matrix device, comprising:
- a substrate having an active display region and at least one driver region;
a plurality of substantially parallel source lines;
a plurality of substantially parallel gate lines crossing the plurality of substantially parallel source lines forming a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region;
a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections;
a matrix of thin film transistors formed in the display region, each thin film transistor connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; and
driving means formed on the substrate in the at least one driver region for driving at least one of the source lines and gate lines and including a shift register having thin film transistors in a CMOS configuration, said thin film transistors of said driving means in said CMOS configuration having a dimension different from the corresponding dimension of the thin film transistors of the display region to provide a desired operating condition for a driving means for an active matrix device;
wherein the matrix of thin film transistors formed in the display region have essentially the same cross-sectional structure as the thin film transistors of the driving means shift register.
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Accused Products
Abstract
An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.
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Citations
125 Claims
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1. An active matrix device, comprising:
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a substrate having an active display region and at least one driver region; a plurality of substantially parallel source lines; a plurality of substantially parallel gate lines crossing the plurality of substantially parallel source lines forming a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; and driving means formed on the substrate in the at least one driver region for driving at least one of the source lines and gate lines and including a shift register having thin film transistors in a CMOS configuration, said thin film transistors of said driving means in said CMOS configuration having a dimension different from the corresponding dimension of the thin film transistors of the display region to provide a desired operating condition for a driving means for an active matrix device; wherein the matrix of thin film transistors formed in the display region have essentially the same cross-sectional structure as the thin film transistors of the driving means shift register. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. An active matrix device, comprising:
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a substrate;
`an active display region including a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate, a matrix of driving electrodes being disposed substantially at the source line-gate line intersections and at least one thin film transistor connected to each source line-gate line intersection;each active display region transistor coupling the driving electrode associated with the active display region transistor to a source line of the active display region transistor; the active display region being centrally positioned on the substrate; and at least one driving means including a shift register having thin film transistors in a CMOS configuration, each driving means for driving one of the source lines and gate lines and disposed on the substrate outside of the active display region, said thin film transistors of said at least one driving means formed in said CMOS configuration having a dimension different from the corresponding dimension of the thin film transistors of the display region to provide a desired operating condition for a driving means for an active matrix device; wherein the thin film transistors of the active display region and driving means shift register have essentially the same cross-sectional structure. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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46. An active matrix liquid crystal display panel, comprising:
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a substrate having an active display region and at least one driver region; a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; driving means formed on the substrate in the at least one driver region for driving at least one of the source lines and gate lines and including a shift register having thin film transistors in a CMOS configuration, said thin film transistors of said driving means in said CMOS configuration having a dimension different from the corresponding dimension of the thin film transistors of the display region to provide a desired operating condition for a driving means for an active matrix liquid crystal display panel; the matrix of thin film transistors formed in the display region having the same cross-sectional structure as the thin film transistors of the driving means shift register; the substrate having a substantially rectangular shape with the display region centrally positioned on the substrate and with the driving means disposed along one side of the substrate; an opposed substrate having at least one common electrode disposed thereon and spaced apart from the substrate; and a liquid crystal material disposed in the space between the substrate and opposed substrate. - View Dependent Claims (47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63)
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64. In a projection type color display device having a light source for projecting light toward a blue dichroic mirror, a green dichroic mirror and a red dichroic mirror for reflecting components of light for modulation by a blue liquid crystal light valve, a green liquid crystal light valve and a red liquid crystal light valve, respectively, the modulated components of light passing through a dichroic prism system for projecting a synthesized color image, each light valve comprising:
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a substrate; an active matrix display region formed on the substrate, the display region including a plurality of substantially parallel source lines crossing a plurality of source substantially parallel gate lines to form a plurality of line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor being connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; driving means formed on the substrate adjacent to the display region or driving at least one of the source lines and gate lines and including a shift register with thin film transistors in a CMOS configuration, the thin film transistors of the driving means in a CMOS configuration having a dimension different from the corresponding dimension of the thin film transistors of the display region to provide a desired operating condition for a liquid crystal light valve, the matrix of thin film transistors in the display region having the same cross-sectional structure as the thin film transistors of the driving means shift register. - View Dependent Claims (65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77)
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78. An active matrix device, comprising:
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a substrate having an active display region and at least one driver region; a plurality of substantially parallel source lines; a plurality of substantially parallel gate lines crossing the plurality of substantially parallel source lines forming a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; and driving means formed on the substrate in the at least one driver region for driving at least one of the source lines and gate lines and including a shift register having thin film transistors in a CMOS configuration, said thin film transistors of said driving means in said CMOS configuration being dimensioned to provide a desired operating condition for a driving means for an active matrix device, the resistance when turned ON of at least one shift register thin film transistor in the CMOS configuration being less than the resistance when turned ON of at least one thin film transistor formed in the display region. - View Dependent Claims (79, 80, 81, 82)
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83. An active matrix device, comprising:
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a substrate having an active display region and at least one driver region; a plurality of substantially parallel source lines; a plurality of substantially parallel gate lines crossing the plurality of substantially parallel source lines forming a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; and driving means formed on the substrate in the at least one driver region for driving at least one of the source lines and gate lines and including a shift register having thin film transistors in a CMOS configuration, said thin film transistors of said driving means in said CMOS configuration having a dimension different from the corresponding dimension of the thin film transistors of the display region to provide a desired operating condition for a driving means for an active matrix device, the thin film transistors of the shift register including at least one P-type thin film transistor having first carrier mobility and at least one N-type thin film transistor having second carrier mobility, the first carrier mobility and second carrier mobility being of the same order of magnitude whereby the first carrier mobility and second carrier mobility vary from each other by no greater than a factor of approximately 10. - View Dependent Claims (84, 85, 86, 87)
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88. An active matrix device comprising:
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a substrate; an active display region including a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate, a matrix of driving electrodes being disposed substantially at the source line-gate line intersections and at least one thin film transistor connected to each source line-gate line intersection; each active display region transistor coupling the driving electrode associated with the active display region transistor to a source line of the active display region transistor; the active display region being centrally positioned on the substrate; and at least one driving means including a shift register having thin film transistors in a CMOS configuration, each driving means for driving one of the source lines and gate lines and disposed on the substrate outside of the active display region, said thin film transistors of said at least one driving means formed in said CMOS configuration having a dimension different from the corresponding dimension of the thin film transistors of the display region to provide a desired operating condition for a driving means for an active matrix device, the thin film transistors of the shift register including at least one P-type thin film transistor having first carrier mobility an at least one N-type thin film transistor having second carrier mobility, the first carrier mobility and second carrier mobility being of the same order of magnitude whereby the first carrier mobility and second carrier mobility vary from each other by no greater than a factor of approximately 10. - View Dependent Claims (89, 90, 91, 92)
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93. An active matrix liquid crystal display panel, comprising:
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a substrate having an active display region and at least one driver region; a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; driving means formed on the substrate in the at least one driver region for driving at least one of the source lines and gate lines and including a shift register having thin film transistors in a CMOS configuration, said thin film transistors of said driving means in said CMOS configuration having a dimension different from the corresponding dimension of the thin film transistors of the display region to provide a desired operating condition for a driving means for an active matrix liquid crystal display panel, the thin film transistors of the shift register including at least one P-type thin film transistor having first carrier mobility and at least one N-type thin film transistor having second carrier mobility, the first carrier mobility and second carrier mobility being of the same order of magnitude whereby the first carrier mobility and second carrier mobility vary from each other by no greater than a factor of approximately 10; the substrate having a substantially rectangular shape with the display region centrally positioned on the substrate and with the driving means disposed along one side of the substrate; an opposed substrate having at least one common electrode disposed thereon and spaced apart from the substrate; and a liquid crystal material disposed in the space between the substrate and opposed substrate. - View Dependent Claims (94, 95, 96, 97)
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98. In a projection type color display device having a light source for projecting light toward a blue dichroic mirror, a green dichroic mirror and a red dichroic mirror for reflecting components of light for modulation by a blue liquid crystal light valve, a green liquid crystal light valve and a red liquid crystal light valve, respectively, the modulated components of light passing through a dichroic prism system for projecting a synthesized color image, each light valve comprising:
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a substrate; an active matrix display region formed on the substrate, the display region including a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor being connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; driving means formed on the substrate adjacent to the display region for driving at least one of the source lines and gate lines and including a shift register with thin film transistors in a CMOS configuration, the thin film transistors of the driving means in a CMOS configuration having a dimension different from the corresponding dimension of the thin film transistors of the display region to provide a desired operating condition for said liquid crystal light valve, the thin film transistors of the static shift register including at least one P-type thin film transistor having first carrier mobility and at least one N-type thin film transistor having second carrier mobility, the first carrier mobility and second carrier mobility being of the same order of magnitude whereby the first carrier mobility and second carrier mobility vary from each other by no greater than a factor of approximately 10. - View Dependent Claims (99, 100, 101, 102)
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103. An active matrix device, comprising:
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a substrate having an active display region and at least one driver region; a plurality of substantially parallel source lines; a plurality of substantially parallel gate lines crossing the plurality of substantially parallel source lines forming a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; and driving means formed on the substrate in the at least one driver region for driving at least one of the source lines and gate lines and including a shift register having thin film transistors in a CMOS configuration, said thin film transistors of said driving means in said CMOS configuration being dimensioned to provide a desired operating condition for a driving means for an active matrix device, the shift register thin film transistors in the CMOS configuration and the thin film transistors formed in the display region each including a gate, the gate length of at least one shift register thin film transistor in the CMOS configuration being less than the gate length of at least one thin film transistor formed in the display region. - View Dependent Claims (104, 105)
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106. An active matrix device comprising:
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a substrate; an active display region including a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate, a matrix of driving electrodes being disposed substantially at the source line-gate line intersections and at least one thin film transistor connected to each source line-gate line intersection; each active display region transistor coupling the driving electrode associated with the active display region transistor to a source line of the active display region transistor; the active display region being centrally positioned on the substrate; and
`at least one driving means including a shift register having thin film transistors in a CMOS configuration, each driving means for driving one of the source lines and gate lines and disposed on the substrate outside of the active display region, said thin film transistors of said at least one driving means formed in said CMOS configuration being dimensioned to provide a desired operating condition for said driving means for an active matrix device, said driving means further including sample and hold means responsive to the shift register for temporarily storing video data, the sample and hold means including a plurality of thin film transistors, the thin film transistors of the sample and hold means and of the driving means shift register each having a gate, the gate length of each thin film transistor in the sample and hold means being less than the gate length of each thin film transistor of the driving means shift register.
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107. An active matrix device, comprising
a substrate; -
an active display region including a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate, a matrix of driving electrodes being disposed substantially at the source line-gate line intersections and at least one thin film transistor connected to each source line-gate line intersection; each active display region transistor coupling the driving electrode associated with the active display region transistor to a source line of the active display region transistor; the active display region being centrally positioned on the substrate; and at least one driving means including a shift register having thin film transistors in a CMOS configuration, each driving means for driving one of the source lines and gate lines and disposed on the substrate outside of the active display region, said thin film transistors of said at least one driving means formed in said CMOS configuration being dimensioned to provide a desired operating condition or a driving means for an active matrix device, the shift register thin film transistors in the CMOS configuration and the thin film transistors formed in the display region each including a gate, the gate length of at least one shift register thin film transistor in the CMOS configuration being less than the gate length of at least one thin film transistor formed in the display region. - View Dependent Claims (108, 109)
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110. An active matrix liquid crystal display panel comprising:
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a substrate having an active display region and at least one driver region; a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; driving means formed on the substrate in the at least one driver region for driving at least one of the source lines and gate lines and including a shift register having thin film transistors in a CMOS configuration, said thin film transistors of said driving means in said CMOS configuration being dimensioned to provide a desired operating condition for a driving means for an active matrix liquid crystal display panel; the substrate having a substantially rectangular shape with the display region centrally positioned on the substrate and with the driving means disposed along one side of the substrate; an opposed substrate having at least one common electrode disposed thereon and spaced apart from the substrate; and a liquid crystal material disposed in the space between the substrate and opposed substrate; said driving means further includes sample and hold means responsive to the shift register for temporarily storing video data; the sample and hold means including a plurality of thin film transistors, the thin film transistors of the sample and hold means and of the driving means shift register each having a gate, the gate length of each thin film transistor in the sample and hold means being less than the gate length of each thin film transistor of the driving means shift register.
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111. An active matrix liquid crystal panel, comprising:
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a substrate having an active display region and at least one driver region; a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; driving means formed on the substrate in the at least one driver region for driving at least one of the source lines and gate lines and including a shift register having thin film transistors in a CMOS configuration, said thin film transistors of said driving means in said CMOS configuration being dimensioned to provide a desired operating condition for a driving means for an active matrix liquid crystal display panel, the shift register thin film transistors in the CMOS configuration and the thin film transistors formed in the display region each including a gate, the gate length of at least one shift register thin film transistor in the CMOS configuration being less than the gate length of at least one thin film transistor formed in the display region; the substrate having a substantially rectangular shape with the display region centrally positioned on the substrate and with the driving means disposed along one side of the substrate; an opposed substrate having at least one common electrode disposed thereon and spaced apart from the substrate; and a liquid crystal material disposed in the space between the substrate and opposed substrate. - View Dependent Claims (112, 113)
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114. In a projection type color display device having a light source for projecting light toward a blue dichroic mirror, a green dichroic mirror and a red dichroic mirror for reflecting components of light for modulation by a blue liquid crystal light valve, a green liquid crystal light valve and a red liquid crystal light valve, respectively, the modulated components of light passing through a dichroic prism system for projecting a synthesized color image, each light valve comprising:
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a substrate; an active matrix display region formed on the substrate, the display region including a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor being connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; and driving means formed on the substrate adjacent to the display region for driving at least one of the source lines and gate lines and including a shift register with thin film transistors in a CMOS configuration, the thin film transistors of the driving means in a CMOS configuration being dimensioned to provide a desired operating condition for said liquid crystal light valve, said driving means further including sample and hold means responsive to the shift register for temporarily storing video data, the sample and hold means including a plurality of thin film transistors, the thin film transistors of the sample and hold means and of the driving means shift register each having a gate, the gate length of each thin film transistor in the sample and hold means being less than the gate length of each thin film transistor of the driving means shift register.
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115. In a projection type color display device having a light source for projecting light toward a blue dichroic mirror, a green dichroic mirror and a red dichroic mirror for reflecting components of light for modulation by a blue liquid crystal light valve, a green liquid crystal light valve and a red liquid crystal light valve, respectively, the modulated components of light passing through a dichroic prism system for projecting a synthesized color image, each light valve comprising:
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a substrate; an active matrix display region formed on the substrate, the display region including a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor being connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; and driving means formed on the substrate adjacent to the display region for driving at least one of the source lines and gate lines and including a shift register with thin film transistors in a CMOS configuration, the thin film transistors of the driving means in a CMOS configuration being dimensioned to provide a desired operating condition for said liquid crystal light valve, the shift register thin film transistors in the CMOS configuration and the thin film transistors formed in the display region each including a gate, the gate length of at least one shift register thin film transistor in the CMOS configuration being less than the gate length of at least one thin film transistor formed in the display region. - View Dependent Claims (116, 117)
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118. An active matrix device comprising:
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a substrate; an active display region including a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate, a matrix of driving electrodes being disposed substantially at the source line-gate line intersections and at least one thin film transistor connected to each source line-gate line intersection; each active display region transistor coupling the driving electrode associated with the active display region transistor to a source line of the active display region transistor; the active display region being centrally positioned on the substrate; and at least one driving means including a shift register having thin film transistors in a CMOS configuration, each driving means for driving one of the source lines and gate lines and disposed on the substrate outside of the active display region, said thin film transistors of said at least one driving means formed in said CMOS configuration being dimensioned to provide a desired operating condition for said driving means for an active matrix device, the resistance when turned ON of at least one shift register thin film transistor in the CMOS configuration being less than the resistance when turned ON of at least one thin film transistor formed in the display region.
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119. An active matrix liquid crystal display panel, comprising:
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a substrate having an active display region and at least one driver region; a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; driving means formed on the substrate in the at least one driver region for driving at least one of the source lines and gate lines and including a shift register having thin film transistors in a CMOS configuration, said thin film transistors of said driving means in said CMOS configuration being dimensioned to provide a desired operating condition for a driving means for an active matrix liquid crystal display panel, the resistance when turned ON of at least one shift register thin film transistor in the CMOS configuration being less than the resistance when turned ON of at least one thin film transistor formed in the display region the substrate having a substantially rectangular shape with the display region centrally positioned on the substrate and with the driving means disposed along one side of the substrate; an opposed substrate having at least one common electrode disposed thereon and spaced apart from the substrate; and a liquid crystal material disposed in the space between the substrate and opposed substrate.
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120. In a projection type color display device having a light source for projecting light toward a blue dichroic mirror, a green dichroic mirror and a red dichroic mirror for reflecting components of light for modulation by a blue liquid crystal light valve, a green liquid crystal light valve and a red liquid crystal light valve, respectively, the modulated components of light passing through a dichroic prism system for projecting a synthesized color image, each light valve comprising:
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a substrate; an active matrix display region formed on the substrate, the display region including a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gates lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor being connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; and driving means formed on the substrate adjacent to the display region for driving at least one of the source lines and gate lines and including a shift register with thin film transistors in a CMOS configuration, the thin film transistors of the driving means in a CMOS configuration being dimensioned to provide a desired operating condition for said liquid crystal light valve, the resistance when turned ON of at least one shift register then film transistor in the CMOS configuration being less than the resistance when turned ON of at least one thin film transistor formed in the display region.
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121. An active device, comprising:
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a substrate having an active display region and at least one driver region; a plurality of substantially parallel source lines; a plurality of substantially parallel gate lines crossing the plurality of substantially parallel source lines forming a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each diving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; and driving means formed on the substrate in the at least one driver region for driving at least one of the source lines and gate lines and including a shift register having thin film transistors in a CMOS configuration, said thin film transistors of said driving means in said CMOS configuration being dimensioned to provide a desired operating condition for a driving means for an active matrix device, the shift register thin film transistors including P-type and N-type thin film transistors, each P-type thin film transistor and N-type thin film transistor having a source, drain, gate insulating layer and separating region for separating the source from drain, said source drain and separating region of each P-type thin film transistor and each N-type thin film transistor being formed from a thin silicon film and sandwiched between and bordered by said substrate and associated gate insulating layer wherein said separating region in each P-type thin film transistor has a thickness which is less than a maximum calculated depletion layer thickness XPMAX and wherein said separating region in each N-type thin film transistor has a thickness which is less than a maximum calculated depletion layer thickness XNMAX, where;
space="preserve" listing-type="equation">X.sub.PMAX =(2ε
×
2φ
fP).sup.1/2 ×
(q×
ND).sup.-1/2
space="preserve" listing-type="equation">X.sub.NMAX =(2ε
×
2φ
fN).sup.1/2 ×
(q×
NA).sup.-1/2q=a unit of electric charge, ε
=the dielectric constant of a thin silicon film,φ
fP=a fermi energy of a P type TFT,φ
fN=the fermi energy of an N type TFT,ND=equivalent donor density of the thin silicon film formed between the associated gate insulating layer and the substrate, NA=equivalent acceptor density of the thin silicon film formed between the associated gate insulating layer and the substrate.
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122. An active matrix device, comprising:
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a substrate; an active display region including a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate, a matrix of driving electrodes being disposed substantially at the source line-gate line intersections and at least one thin film transistor connected to each source line-gate line intersection; each active display region transistor coupling the driving electrode associated with the active display region transistor to a source line of the active display region transistor; the active display region being centrally positioned on the substrate; and at least one driving means including a shift register having thin film transistors in a CMOS configuration, each driving means for driving one of the source lines and gate lines and disposed on the substrate outside of the active display region, said thin film transistors of said at least one driving means formed in said CMOS configuration being dimensioned to provide a desired operating condition for said driving means for an active matrix device, the shift register thin film transistors including P-type and N-type thin film transistors, each P-type thin film transistor and N-type thin film transistor having a source, drain, gate insulating layer and separating region for separating the source from drain, said source drain and separating region of each P-type thin film transistor and each N-type thin film transistor being formed from a thin silicon film and sandwiched between and bordered by said substrate and associated gate insulating layer wherein said separating region in each P-type thin film transistor has a thickness which is less than a maximum calculated depletion layer thickness XPMAX and wherein said separating region in each N-type thin film transistor has a thickness which is less than a maximum calculated depletion layer thickness XNMAX, where;
space="preserve" listing-type="equation">X.sub.PMAX =(2ε
×
2φ
fP).sup.1/2 ×
(q×
ND).sup.-1/2
space="preserve" listing-type="equation">X.sub.NMAX =(2ε
×
2φ
fN).sup.1/2 ×
(q×
NA).sup.-1/2q=a unit of electric charge, ε
=the dielectric constant of a thin silicon film,φ
fP=a fermi energy of a P type TFT,φ
fN=the fermi energy of an N type TFT,ND=equivalent donor density of the thin silicon film formed between the associated gate insulating layer and the substrate, NA=equivalent acceptor density of the thin silicon film formed between the associated gate insulating layer and the substrate.
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123. An active matrix liquid crystal display panel, comprising:
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a substrate having an active display region and at least one driver region; a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; driving means formed on the substrate in the at least one driver region for driving at least one of the source lines and gate lines and including a shift register having thin film transistors in a CMOS configuration, said thin film transistors of said driving means in said CMOS configuration being dimensioned to provide a desired operating condition for a driving means for an active matrix liquid crystal display panel; a substrate having a substantially rectangular shape with the display region centrally positioned on the substrate and with the driving means disposed along one side of the substrate; an opposed substrate having at least one common electrode disposed thereon and spaced apart from the substrate; and a liquid crystal material disposed in the space between the substrate and opposed substrate; the shift register thin film transistors including P-type and N-type thin film transistors, each P-type thin film transistor and N-type thin film transistor having a source, drain, gate insulating layer and separating region for separating the source from drain, said source drain and separating region of each P-type thin film transistor and each N-type thin film transistor being formed from a thin silicon film and sandwiched between and bordered by said substrate and associated gate insulating layer wherein said separating region in each P-type thin film transistor has a thickness which is less than a maximum calculated depletion layer thickness XPMAX and wherein said separating region in each N-type thin film transistor has a thickness which is less than a maximum calculated depletion layer thickness XNMAX, where;
space="preserve" listing-type="equation">X.sub.PMAX =(2ε
×
2φ
fP).sup.1/2 ×
(q×
ND).sup.-1/2
space="preserve" listing-type="equation">X.sub.NMAX =(2ε
×
2φ
fN).sup.1/2 ×
(q×
NA).sup.-1/2q=a unit of electric charge, ε
=the dielectric constant of a thin silicon film,φ
fP=a fermi energy of a P type TFT,φ
fN=the fermi energy of an N type TFT,ND=equivalent donor density of the thin silicon film formed between the associated gate insulating layer and the substrate, NA=equivalent acceptor density of the thin silicon film formed between the associated gate insulating layer and the substrate.
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124. In a projection type color display device having a light source for projecting light toward a blue dichroic mirror, a green dichroic mirror and a red dichroic mirror for reflecting components of light for modulation by a blue liquid crystal light valve, a green liquid crystal light valve and a red liquid crystal light valve, respectively, the modulated components of light passing through a dichroic prism system for projecting a synthesized color image, each light valve comprising:
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a substrate; an active matrix display region formed on the substrate, the display region including a plurality of substantially parallel source lines crossing a plurality of substantially parallel gate lines to form a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor being connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; driving means formed on the substrate adjacent to the display region for driving at least one of the source lines and gate lines and including a shift register with thin film transistors in a CMOS configuration, the thin film transistors of the driving means in a CMOS configuration being dimensioned to provide a desired operating condition for said liquid crystal light valve, the shift register thin film transistors including P-type and N-type thin film transistors, each P-type thin film transistor and N-type thin film transistor having a source, drain, gate insulating layer and separating region for separating the source from drain, said source drain and separating region of each P-type thin film transistor and each N-type thin film transistor being formed from a thin silicon film and sandwiched between and bordered by said substrate and associated gate insulating layer wherein said separating region in each P-type thin film transistor has a thickness which is less than a maximum calculated depletion layer thickness XPMAX and wherein said separating region in each N-type thin film transistor has a thickness which is less than a maximum calculated depletion layer thickness XNMAX, where;
space="preserve" listing-type="equation">X.sub.PMAX =(2ε
×
2φ
fP).sup.1/2 ×
(q×
ND).sup.-1/2
space="preserve" listing-type="equation">X.sub.NMAX =(2ε
×
2φ
fN).sup.1/2 ×
(q×
NA).sup.-1/2q=a unit of electric charge, ε
=the dielectric constant of a thin silicon film,φ
fP=a fermi energy of a P type TFT,φ
fN=the fermi energy of an N type TFT,ND=equivalent donor density of the thin silicon film formed between the associated gate insulating layer and the substrate, NA=equivalent acceptor density of the thin silicon film formed between the associated gate insulating layer and the substrate.
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125. An active matrix device comprising:
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a substrate having an active display region and at least one driver region; a plurality of substantially parallel source lines; a plurality of substantially parallel gate lines crossing the plurality of substantially parallel source lines forming a plurality of source line-gate line intersections, the source lines and gate lines being disposed on the substrate in the display region; a matrix of driving electrodes, each driving electrode being disposed substantially at one of the source line-gate line intersections; a matrix of thin film transistors formed in the display region, each thin film transistor connected to one of the source line-gate line intersections and serving as switching means for coupling the driving electrode associated with the transistor to the source line of the transistor; and driving means formed on the substrate in the at least one driver region for driving at least one of the source lines and gate lines and including a shift register having thin film transistors in a CMOS configuration, said thin film transistors of said driving means in said CMOS configuration being dimensioned to provide a desired operating condition for a driving means for an active matrix device, the driving means including a plurality of adjacent unit cells, the unit cells having a pitch substantially equivalent to the pitch of the driving electrodes in the display region, each unit cell in the driving means including thin film transistors in a CMOS configuration, the driving means thin film transistors including P-type and N-type thin film transistors each unit cell being electrically isolated from each other unit cell with a silicon thin film disposed as an island overlapping two adjacent cells to form one of the N-type and P-type thin film transistors and with silicon thin film disposed in the form of islands overlapping two other unit cells to form the other of the N-type and P-type thin film transistor in a staggered arrangement.
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Specification