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Wide band-gap semiconductors having low bipolar resistivity and method of formation

DC
  • US 5,252,499 A
  • Filed: 08/15/1988
  • Issued: 10/12/1993
  • Est. Priority Date: 08/15/1988
  • Status: Expired due to Term
First Claim
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1. A method of forming a p-n junction from a wide band-gap semiconductor, comprising forming an n-type side and a p-type side of a semiconductor by doping the n-type side to form an n-type semiconductor and doping the p-type side to form a p-type semiconductor, then introducing at least a sufficient quantity of atomic hydrogen into at least one side of the doped semiconductor to neutralize a portion of the compensators of at least that side to reduce the resistivity of at least that side to yield a wide band-gap semiconductor having reduced resistivity on at least that side.

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