Electrochromic material and method of making an electrochromic material

• US 5,253,101 A
• Filed: 11/07/1988
• Issued: 10/12/1993
• Est. Priority Date: 12/28/1987
• Status: Expired due to Fees

• Current Assignee: Ford Motor Company
• Original Assignee: Ford Motor Company
• Inventors: Demiryont, Hulya
• Primary Examiner(s): Pascal, Robert J.
• Assistant Examiner(s): Shingleton, Michael B.
• Application Number:
  US07/267,858
• Time in Patent Office: 1,800 Days
• Field of Search: 350/357, 359/273, 359/900
• US Class Current: 359/373
• CPC Class Codes: C09K 9/00 Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy
• CPC Class Codes: G02F 1/1524 Transition metal compounds
• CPC Class Codes: Y10S 359/90 Methods

Abstract

This specification discloses reduced tungsten oxide electrochromic material, useful in an electrochromic device, having excellent electrochromic properties. The oxidation number of the tungsten of the material as deposited on a support of the device in a stable bleached condition is, on average, between +5.99 and +5.90. The material may be made by reducing fully oxidized tungsten oxide by a reducing agent. The reducing agent may be a metal or a metal oxide.

Claims

1. A amorphous reduced tungsten oxide electrochromic material useful in an electrochromic device, the oxidation number of the tungsten of the material as deposited on a support of said device in a stable bleached condition being, on average, less than +5.99 and greater than +5.90.

2. The electrochromic material of claim 1, wherein said reduced tungsten oxide electrochromic material has said oxidation number, on average, less than or equal to +5.96 and greater than +5.90.

3. The electrochromic material of claim 2, wherein said reduced tungsten oxide electrochromic material has said oxidation number, on average, of +5.94.

4. The electrochromic material of claim 1, wherein said reduced tungsten oxide electrochromic material is made by reacting fully oxidized tungsten oxide with a reducing agent in a non-oxidizing atmosphere.

5. The electrochromic material of claim 4, wherein said reducing agent is a metal used in an amount less than about 2% by weight based on the total weight of said fully oxidized tungsten oxide and said reducing agent.

6. The electrochromic material of claim 4, wherein said reducing agent is a metal oxide used in an amount less than about 10% by weight based on the total weight of said fully oxidized tungsten oxide and said reducing agent.

7. The electrochromic material of claim 5, wherein said metal reducing agent is selected from the group comprising tungsten, lead, hydrogen, silver, bismuth and aluminum.

8. The electrochromic material of claim 6, wherein said metal oxide reducing agent is selected from lead oxide and bismuth oxide.

9. The electrochromic material of claim 4, wherein said reduced tungsten oxide electrochromic material is deposited on said support by deposition techniques selected from vacuum deposition, chemical vapor deposition, thermal evaporation, sputtering, and sol-gel deposition.

10. The electrochromic material of claim 1, wherein said reduced tungsten oxide electrochromic material is deposited onto said support by a physical deposition method selected from (i) reactive sputtering of tungsten in an oxygen/inert gas atmosphere, (ii) ion plating of tungsten in an oxygen/inert gas atmosphere, and (iii) ion beam sputtering of tungsten in an oxygen/inert gas atmosphere.

11. The method of manufacturing the material of claim 1, wherein said reduced tungsten oxide electrochromic material is deposited onto said support by a physical deposition method selected from (i) reactive sputtering of tungsten and a reducing agent in an oxygen/inert gas atmosphere, (ii) ion plating of tungsten and a reducing agent in an oxygen/inert gas atmosphere, (iii) ion beam sputtering of tungsten and a reducing agent in an oxygen/inert gas atmosphere.

12. A method which comprises depositing an amorphous reduced tungsten oxide electrochromic material on a support of an electrochromic device, the oxidation number of the tungsten of the material as deposited on said support in a stable bleached condition being, on average, less than +5.99 and greater than +5.90.

13. The method of claim 12, wherein said reduced tungsten oxide electrochromic material has said oxidation number, on average, less than or equal to +5.96 and greater than +5.90.

14. The method of claim 13, wherein said reduced tungsten oxide electrochromic material has said oxidation number, on average, of +5.94.

15. The method of claim 12, wherein said reduced tungsten oxide electrochromic material is made by reacting fully oxidized tungsten oxide with a reducing agent in a non-oxidizing atmosphere.

16. The method according to claim 15, wherein said reduced tungsten oxide electrochromic material is deposited on said support by deposition techniques selected from vacuum deposition, chemical vapor deposition, thermal evaporation, sputtering, and sol-gel deposition.

17. The method of claim 15, wherein said reducing agent is a metal used in an amount less than about 2% by weight based on the total weight of said fully oxidized tungsten oxide and said reducing agent.

18. The method of claim 15, wherein said reducing agent is a metal oxide used in an amount less than about 10% by weight based on the total weight of said fully oxidized tungsten oxide and said reducing agent.

19. The method of claim 17, wherein said metal reducing agent is selected from the group comprising tungsten, silver, lead, hydrogen, bismuth and aluminum.

20. The method of claim 18, wherein said metal oxide reducing agent is selected from lead oxide and bismuth oxide.

21. The method of claim 12, wherein said reduced tungsten oxide electrochromic material is deposited onto said support by a physical deposition method selected from (i) reactive sputtering of tungsten in an oxygen/inert gas atmosphere, (ii) ion plating of tungsten in an oxygen/inert gas atmosphere, and (iii) ion beam sputtering of tungsten in an oxygen/inert gas atmosphere.

22. The method of claim 12, wherein said reduced tungsten oxide electrochromic material is deposited onto said support by a physical deposition method selected from (i) reactive sputtering of tungsten and a reducing agent in an oxygen/inert gas atmosphere, (ii) ion plating of tungsten and a reducing agent in an oxygen/inert gas atmosphere, (iii) ion beam sputtering of tungsten and a reducing agent in an oxygen/inert gas atmosphere.

23. An electrochromic device comprising two electrodes and located therebetween an amorphous reduced tungsten oxide electrochromic material, the oxidation number of the tungsten of said material as deposited on a support of said device in a stable bleached condition being, on average, less than +5.99 and greater than +5.90.

24. The electrochromic device of claim 23, wherein said reduced tungsten oxide electrochromic material has said oxidation number, on average, less than or equal to +5.96 and greater than +5.90.

25. The electrochromic device of claim 24, wherein said reduced tungsten oxide electrochromic material has said oxidation number, on average, of +5.94.

26. The electrochromic device of claim 23, wherein said reduced tungsten oxide electrochromic material is made by reacting fully oxidized tungsten oxide with a reducing agent in a non-oxidizing atmosphere.

27. The electrochromic device of claim 23, wherein said reduced tungsten oxide electrochromic material is deposited onto said support by a physical deposition method selected from (i) reactive sputtering of tungsten in an oxygen/inert gas atmosphere, (ii) ion plating of tungsten in an oxygen/inert gas atmosphere, and (iii) ion beam sputtering of tungsten in an oxygen/inert gas atmosphere.

28. The electrochromic device of claim 23, wherein said reduced tungsten oxide electrochromic material is deposited onto said support by a physical deposition method selected from (i) reactive sputtering of tungsten and a reducing agent in an oxygen/inert gas atmosphere, (ii) ion plating of tungsten and a reducing agent in an oxygen/inert gas atmosphere, (iii) ion beam sputtering of tungsten and a reducing agent in an oxygen/inert gas atmosphere.

29. An amorphous reduced tungsten oxide electrochromic material useful in an electrochromic device, the oxidation number of the tungsten of the material as deposited on a support of said device in a stable bleached condition being, on average, less than +5.99 and greater than or equal to +5.94.

30. The electrochromic material of claim 29, wherein said reduced tungsten oxide electrochromic material has said oxidation number, on average, less than or equal to +5.96 and greater than or equal to +5.94.

31. A method which comprises depositing an amorphous reduced tungsten oxide electrochromic material on a support of an electrochromic device, the oxidation number of the tungsten of the material as deposited on said support in a stable bleached condition being, on average, less than +5.99 and greater than or equal to +5.94.

32. The method of claim 31, wherein said reduced tungsten oxide electrochromic material has said oxidation number, on average, less than or equal to +5.96 and greater than or equal to +5.94.

33. An electrochromic device comprising two electrodes and located therebetween an amorphous reduced tungsten oxide electrochromic material, the oxidation number of the tungsten of said material as deposited on a support of said device in a stable bleached condition being, on average, less than +5.99 and greater than or equal to +5.94.

34. The electrochromic device of claim 33, wherein said reduced tungsten oxide electrochromic material has said oxidation number, on average, less than or equal to +5.96 and greater than or equal to +5.94.