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Method for manufacturing a semiconductor device

  • US 5,254,208 A
  • Filed: 07/15/1991
  • Issued: 10/19/1993
  • Est. Priority Date: 07/24/1990
  • Status: Expired due to Term
First Claim
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1. In a method for manufacturing a semiconductor device comprising the steps of forming a non-single crystal semiconductor layer on a glass substrate and crystallizing said non-single crystal semiconductor layer, the improvement comprising:

  • heating said glass substrate at a temperature not higher than strain point of said glass substrate before forming said non-single crystal semiconductor layer in an atmosphere comprising a gas selected from the group consisting of hydrogen gas and carbon monoxide gas;

    .

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