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System for removing material from semiconductor wafers using a contained plasma

  • US 5,254,830 A
  • Filed: 05/07/1991
  • Issued: 10/19/1993
  • Est. Priority Date: 05/07/1991
  • Status: Expired due to Term
First Claim
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1. A system for removing material from a semiconductor wafer;

  • said system comprising;

    means for determining thickness profile data for said semiconductor wafer;

    means for generating a dwell time versus position map for said semiconductor wafer, said map being generated from said thickness profile data; and

    means for removing material from said semiconductor wafer, said material removing means being controlled in accordance with said dwell time versus position map, said means including a plasma chemical etching chamber having a platform for receiving said semiconductor wafer, a means for creating a contained plasma within said chamber, said contained plasma having an etching footprint smaller than the dimension of thickness variation to be removed, and a means for controlling the dwell time and position of said plasma in accordance with said dwell time versus position map.

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