Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device

• US 5,255,279 A
• Filed: 05/09/1991
• Issued: 10/19/1993
• Est. Priority Date: 05/09/1990
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Hosoda, Masahiro, Takahashi, Kosei, Tsunoda, Atsuo, Matsui, Sadayoshi, Suyama, Takahiro
• Primary Examiner(s): Davie, James W.
• Application Number:
  US07/698,001
• Time in Patent Office: 894 Days
• Field of Search: 372/45, 372/46
• US Class Current: 372/45.013
• CPC Class Codes: H01L 21/02395 Arsenides
• CPC Class Codes: H01L 21/02461 Phosphides
• CPC Class Codes: H01L 21/02463 Arsenides
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type
• CPC Class Codes: H01L 31/1844 comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
• CPC Class Codes: H01L 33/0062 for devices with an active region comprising only III-V compounds
• CPC Class Codes: H01S 2304/02 MBE
• CPC Class Codes: H01S 5/0421 characterised by the semiconducting contacting layers electrodes H01S5/0425
• CPC Class Codes: H01S 5/209 special etch stop layers
• CPC Class Codes: H01S 5/2231 with inner confining structure only between the active layer and the upper electrode
• CPC Class Codes: H01S 5/3211 characterised by special cladding layers, e.g. details on band-discontinuities
• CPC Class Codes: H01S 5/32325 red laser based on InGaP
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 148/095 Laser devices

Abstract

On a GaAs substrate (Al_Y Ga_1-Y)₀.5 In₀.5 P crystal layers (0≦Y≦1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al_Y Ga_1-Y As crystal layer (0≦Y≦1) of a thickness of several molecules, on which layer an Al_X Ga_1-X As crystal layer (0≦X≦1) is formed. Since the surface of the Al_Y Ga_1-Y As crystal layer has been purified, the formed Al_X Ga_1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.

Claims

1. A semiconductor laser device comprising:

a GaAs substrate,

a double hetero structure composed of AlGaInP crystals formed on said GaAs substrate,

an (Al_X Ga_1-X)₀.5 in₀.5 P etching stop layer (0≦

X≦

1)

a GaAs optical absorption layer formed on said etching stop layer and having a strip groove extending therethrough to reach said etching stop layer,

an AlGaAs layer of a thickness of several molecules formed in the strip groove;

a regrowing AlGaAs layer formed on said etching stop layer and said GaAs optical absorption layer in such a manner so as to fill up said strip groove; and

an electrode formed beneath said GaAs substrate and an electrode formed on said layers;

wherein said etching stop layer and said regrowing AlGaAs layer have a band gap energy greater than an optical energy generated within said double hetero structure.

2. A semiconductor laser device comprising:

a GaAs substrate,

a double hetero structure composed of AlGaInP crystals formed on said GaAs substrate,

an (Al_x Ga_1-x)₀.5 In₀.5 P etching stop layer (0≦

X≦

1) formed on said double hetero structure,

a GaAs optical absorption layer formed on said etching stop layer and having a stripe groove extending therethrough to reach said etching stop layer,

a regrowing AlGaAs layer formed on said etching stop layer and said GaAs optical absorption layer in such a manner so as to fill up said stripe groove; and

an electrode formed beneath said GaAs substrate and an electrode formed on said layers;

wherein said etching stop layer and said regrowing AlGaAs layer have a band gap energy greater than an optical energy generated within said double hetero structure,

wherein another (Al_y Ga_1-y)₀.5 In₀.5 P etching stop layer (0≦

X≦

1) is formed between the top surface of said GaAs optical absorption layer and the bottom surface of said AlGaAs layer.

3. A semiconductor laser device comprising:

a GaAs substrate,

a double hetero structure formed on said GaAs substrate and composed of AlGaInP crystal layers which lattice-match with said GaAs substrate,

a GaInP etching stop layer formed on said double hetero structure,

an optical absorption layer formed on said GaInP etching stop layer and having a stripe groove extending therethrough to reach said GaInP etching stop layer,

a GaAs layer of a thickness of several molecules formed in the strip groove;

an AlGaAs layer formed on said optical absorption layer and said GaInP etching stop layer, and

an electrode formed beneath said GaAs substrate and an electrode formed on said layers;

wherein the thickness of said GaInP etching stop layer is smaller than an electron de Broglie wavelength, and the band gap energy of said AlGaAs layer is greater than an optical energy generated within said double hetero structure.

4. A semiconductor laser device comprising:

a GaAs substrate,

a double hetero structure formed on said GaAs substrate and composed of AlGaInP crystal layers which lattice-match with said GaAs substrate,

a GaInP etching stop layer formed on said double hetero structure,

an optical absorption layer formed on said GaInP etching stop layer and having a stripe groove extending therethrough to reach said GaInP etching stop layer,

an AlGaAs layer formed on said optical absorption layer and said GaInP etching stop layer, and

an electrode formed beneath said GaAs substrate and an electrode formed on said layers;

wherein the thickness of said GaInP etching stop layer is smaller than an electron de Broglie wavelength, and the band gap energy of said AlGaAs layer is greater than an optical energy generated within said double hetero structure,

wherein a second GaInP etching stop layer is formed on said optical absorption layer.