Microwave plasma assisted supersonic gas jet deposition of thin film materials

• US 5,256,205 A
• Filed: 01/07/1992
• Issued: 10/26/1993
• Est. Priority Date: 05/09/1990
• Status: Expired due to Term

• Current Assignee: JET Process Corporation
• Original Assignee: JET Process Corporation
• Inventors: Schmitt, Jerome J. III, Halpern, Bret L.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): BASKIN, JONATHAN
• Application Number:
  US07/817,518
• Time in Patent Office: 658 Days
• Field of Search: 156/345, 118/723, 118/718, 118/725, 118/729, 118/730, 315/111.21, 315/111.41, 315/111.51, 219/121.36, 219/121.47, 219/121.52, 427/562
• US Class Current: 118/723.0MW
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: C23C 16/513 using plasma jets

Abstract

An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.

Claims

1. A system for depositing a film upon a substrate, said system comprising:

a vacuum chamber having a port allowing for access to a vacuum chamber interior;

a positioning apparatus for locating a substrate within said vacuum chamber interior;

a gas jet apparatus affixed to said vacuum chamber port for providing controlled entry of gas into the interior of the vacuum chamber, said gas jet apparatus including;

a large nozzle having an interior cavity;

a means for providing carrier gas to said large nozzle interior cavity;

a small nozzle located within said large nozzle interior cavity for providing a supersonic jet of reagent gas from a small nozzle tip configured to provide said reagent gas directly to an outer surface of said substrate;

a discharge means configured about said gas jet apparatus for generating a discharge in said carrier and reagent gas in a position of said large nozzle interior cavity substantially displaced from said small nozzle tip towards said vacuum chamber; and

a pump means for evacuating gas from said vacuum chamber.

2. The system of claim 1 wherein said discharge means comprises a microwave excitation means for provided a microwave field encompassing said carrier and reagent gases.

3. The system of claim 1 wherein said small nozzle tip is in registration with and at a distance from said substrate upper surface.

4. The system of claim 3 wherein said small nozzle is centrally positioned within said large nozzle interior cavity.

5. The system of claim 1 wherein said large nozzle comprises tubular pyrex and further comprises an interior tubular liner of quartz spoaced from said pyrex.

6. The system of claim 1 wherein said large nozzle further comprises a circular tip.

7. The system of claim 1 wherein said large nozzle further comprises a linear tip.

8. The system of claim 1 further comprising a translation apparatus for moving said substrate positioning apparatus between a first and a second position.

9. The system of claim 8 wherein said translation apparatus further comprises a mechanism for rastering said substrate positioning apparatus with respect to a large nozzle tip, thereby presenting substantially all of said substrate surface to be in registration with said large nozzle tip.

10. The system of claim 1 where said discharge means further comprises a means for providing electrical power.

11. The system of claim 1 wherein said gas jet, apparatus further comprises a means for providing a second reagent gas with said carrier gas.

12. The system of claim 1 wherein said substrate comprises a member of the group consisting essentially of silicon, silicon dioxide, phosphate glass, gallium arsenide and indium phosphide.

13. The system of claim 1 wherein said reagent gas comprises a member of the group consisting essentially of SiH₄, SiH₂ Cl₂, SiH₃ Cl, SiCl₄, SiF₄, WF₆, TiCl₄, BCL₃, B₂ H₆, GeH₄, AsH₃, C₂ H₂, W(CO)₆.

14. The system of claim 1 wherein said reagent gas is an organo-metallic vapor.

15. The system of claim 1 wherein said substrate positioning apparatus further comprises a means for receiving a supply and a take up reel for receiving a wire shaped substrate.

16. In a system for depositing a film upon a substrate, said system including a vacuum chamber having a port allowing for access to an interior, an apparatus for receiving a substrate positioned within said vacuum chamber interior, and a pump means for evacuating gas from said vacuum chamber, a gas jet apparatus affixed to said vacuum chamber port for providing controlled gas entry into the interior of the vacuum chamber, said apparatus comprising:

a large nozzle having an interior cavity;

a means for providing carrier gas to said large nozzle interior cavity;

a small nozzle located within said large nozzle interior cavity for providing a supersonic jet of reagent gas from a small nozzle tip configured to provide said reagent gas directly to an outer surface of said substrate; and

a discharge means configured about the exterior of said gas jet apparatus for generating a discharge in said carrier and reagent gas in a portion of said large nozzle interior cavity substantially displaced from said small nozzle tip towards said vacuum chamber.

17. The apparatus of claim 16 wherein said discharge means comprises a microwave excitation means for provided a microwave field encompassing said carrier and reagent gases.

18. The apparatus of claim 16 wherein said large nozzle further comprises a large nozzle tip in registration with said substrate upper surface.

19. The apparatus of claim 18 wherein said small nozzle is centrally positioned within said large nozzle interior cavity.

20. The apparatus of claim 18 wherein said large nozzle tip is circular.

21. The apparatus of claim 20 wherein said translation apparatus further comprises a mechanism for rastering said substrate positioning apparatus with respect to said large nozzle tip, thereby presenting substantially all of said substrate surface to be in registration with said nozzle tip.

22. The apparatus of claim 18 wherein said large nozzle tip is linear.

23. The apparatus of claim 16 wherein said large nozzle comprises tubular pyrex and further comprises an interior tubular liner of quartz spaced from said pyrex.

24. The apparatus of claim 16 further comprising a translation apparatus for moving said substrate positioning apparatus between a first and a second position.

25. A system for depositing a film upon a substrate, said system comprising:

a vacuum chamber having a plurality of ports allowing for access to a vacuum chamber interior,

a translation apparatus for receiving a substrate positioned within said vacuum chamber interior and for moving said substrate between a first position and a second position;

a first gas jet apparatus affixed to a first vacuum chamber port for providing controlled gas entry into the interior of the vacuum chamber, said first gas jet apparatus including;

a first large nozzle having an interior cavity;

a first means for providing carrier gas within said first gas jet apparatus interior cavity;

a first small nozzle located within said large nozzle interior cavity for providing a supersonic jet of first reagent gas from a first small nozzle tip configured to provide said first reagent gas directly towards said substrate first position;

a second gas jet apparatus affixed to a second vacuum chamber port for providing controlled gas entry into the interior of the vacuum chamber, said second gas jet apparatus including;

a second large nozzle having an interior cavity;

a second means for providing carrier gas within said second large nozzle interior cavity;

a second small nozzle located within said second gas jet apparatus interior cavity for providing a supersonic jet of second reagent gas from a second small nozzle tip configured to provide said second reagent gas directly towards said substrate second position; and

a pump means for evacuating gas from said vacuum chamber;

said translation apparatus further for moving said substrate between said first and second positions within a time less than a time needed to complete film formation on said substrate, thereby ensuring the substrate film is chemically comprised of at least part of said first and second reagents.

26. The system of claim 25 wherein said first gas jet apparatus further comprises a discharge means configured about said gas jet apparatus for generating a discharge in said carrier and reagent gas in a portion of said gas jet apparatus interior cavity substantially displaced from said nozzle tip towards said vacuum chamber.

27. The system of claim 25 wherein said translation apparatus comprises a means for heating said substrate.

28. The system of claim 25 wherein said translation apparatus includes a surface for mounting said substrate substantially perpendicular to a direction of said reagent gas jet and rotatable about an axis substantially parallel to said substrate plane.

29. The system of claim 25 wherein said translation apparatus includes a surface for mounting said substrate substantially perpendicular to a direction of said gas jet and is displaceable relative to said gas jet.

30. The system of claim 25 wherein said first gas jet apparatus further comprises a means for providing a third reagent gas with said carrier gas.

31. The system of claim 25 wherein said substrate comprises a member of the group consisting essentially of silicon, quartz, silicon dioxide, phosphate glass, gallium arsenide and indium phosphide.

32. The system of claim 25 wherein said substrate comprises a member of the group consisting essentially of SiH₄, SiH₂ Cl₂, SiH₃ Cl, SiCl₄, SiF₄, WF₆, TiCl₄, BCL₃, B2H₆, GeH₄, AsH₃, C₂ H₂, W(CO)₆.

33. The system of claim 25 wherein said first reagent gas is an organo-metallic vapor.

34. The system of claim 25 wherein said translation apparatus further comprises a means for receiving a supply and a take up reel for receiving a wire shaped substrate.

35. The system of claim 25 wherein said translation apparatus further comprises a means for receiving a supply and a take up reel for receiving a web shaped substrate.

36. The system of claim 25 further comprises an auxiliary gas jet apparatus affixed to a vacuum chamber port having an interior cavity for providing a supersonic jet of gas directly to an outer surface of said substrate and a discharge in said gas in a portion of said auxiliary gas jet apparatus interior cavity.