Method for suppression of electrification

• US 5,256,454 A
• Filed: 05/30/1991
• Issued: 10/26/1993
• Est. Priority Date: 05/30/1990
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd., Showa Denko KK
• Original Assignee: Hitachi, Ltd., Showa Denko KK
• Inventors: Saida, Yoshihiro, Suzuki, Yasunori, Tomozawa, Hideki, Murai, Fumio, Ikenoue, Yoshiaki, Takashi, Ryuma
• Primary Examiner(s): PIANALTO, BERNARD D
• Application Number:
  US07/707,819
• Time in Patent Office: 880 Days
• Field of Search: 427/44, 427/43.1, 427/35, 427/404, 427/407.1, 427/258, 427/279, 427/419.6, 427/419.2, 427/496, 427/498, 427/504, 427/506, 427/525, 427/526, 427/552
• US Class Current: 427/498
• CPC Class Codes: G03F 7/093 characterised by antistatic means, e.g. for charge depletion
• CPC Class Codes: G03F 7/2059 using a scanning corpuscular radiation beam, e.g. an electron beam
• CPC Class Codes: Y10T 428/31504 Composite [nonstructural laminate]

Abstract

Electrification is suppressed with a water-soluble electrification-suppressing film having an electron conductivity and comprising a polymer resin. A high electrification-suppressing effect which is also high in vacuum can be easily obtained by using the electrification-suppressing film with less contamination.

Claims

1. A method for suppression of electrification which comprises a step of forming on a substrate a water-soluble electrification-suppressing film having an electron conductivity and a step of irradiating a charged particle beam on the substrate;

the electrification-suppressing film comprising a conducting polymer having a monomeric structure unit represented by the following formula (I), (II), (III), (III'"'"'), OR (III");

##STR3## wherein Ht represents NH, S or O;

R represents R'"'"' or OR'"'"' in which R'"'"' represents a linear or branched divalent hydrocarbon group having 1 to 10 carbon atoms or a divalent hydrocarbon group containing an ether linkage;

X represents SO₃ ;

Z represents OR'"'"'X--H, OR'"'"'H, H or OH in which R'"'"' and X have the same meanings as above; and

n represents a number of 5 or more.

2. A method according to claim 1, wherein the charged particle beam is an electron beam emitted from an electron beam source of an electron microscope.

3. A method according to claim 1, wherein the charged particle beam is an electron beam emitted from an electron source of an electron beam writing device.

4. A method according to claim 1, wherein the charged particle beam is an ion beam emitted from an ion source of an ion implantation device.

5. A method according to claim 1, wherein the charged particle beam is an electron beam emitted from an electron beam source of a linewidth measurement device.

6. A method for suppression of electrification which comprises a step of forming a first layer on a substrate, a step of forming on the first layer an electrification-suppressing film having an electron conductivity a step of forming a resist layer on the electrification-suppressing layer, and a step of irradiating a charged particle beam onto the substrate;

said electrification-suppressing film comprising a conducting polymer having a monomeric structure unit represented by the following formula (I), (II), (III), (III'"'"'), OR (III");

##STR4## wherein Ht represents NH, S or O;

R represents R'"'"' or OR'"'"' in which R'"'"' represents a linear or branched divalent hydrocarbon group having 1 to 10 carbon atoms or a divalent hydrocarbon group containing an ether linkage;

X represents SO₃ ;

Z represents OR'"'"'X--H, OR'"'"'H, H or OH in which R'"'"' and X have the same meanings as above; and

n represents a number of 5 or more.

7. A method for suppression of electrification which comprises a step of forming a first layer on a substrate, a step of forming on the first layer a second layer different from the first layer in etching characteristics, a step of forming a resist layer on the second layer, a step of forming on the resist layer an electrification-suppressing film having an electron conductivity, and a step of irradiating a charged particle beam onto the substrate;

said electrification-suppressing film comprising a conducting polymer having a monomeric structure unit represented by the following formula (I), (II), (III), (III'"'"'), OR (III");

##STR5## wherein Ht represents NH, S or O;

R represents R'"'"' or OR'"'"' in which R'"'"' represents a linear or branched divalent hydrocarbon group having 1 to 10 carbon atoms or a divalent hydrocarbon group containing an ether linkage;

X represents SO₃ ;

Z represents OR'"'"'X--H, OR'"'"'H, H or OH in which R'"'"' and X have the same meanings as above; and

n represents a number of 5 or more.

8. A method according to claim 7, wherein the first layer comprises a novolak-based resist.

9. A method according to claim 7, wherein the second layer comprises a spin-on glass.

10. A method according to claim 7, wherein the charged particle beam is an electron beam.

11. A method for suppression of electrification which comprises a step of forming an insulating film on a substrate, a step of forming on the insulating film a resist layer having a given shaft, a step of forming on the substrate an electrification-suppressing film having an electron conductivity, and a step of irradiating a charged particle beam onto the substrate;

said electrification-suppressing film comprising a conducting polymer having a monomeric structure unit represented by the following formula (I), (II), (III), (III'"'"'), OR (III");

##STR6## wherein Ht represents NH, S or O;

R represents R'"'"' or OR'"'"' in which R'"'"' represents a linear or branched divalent hydrocarbon group having 1 to 10 carbon atoms or a divalent hydrocarbon group containing an ether linkage;

X represents SO₃ ;

Z represents OR'"'"'X--H, OR'"'"'H, H or OH in which R'"'"' and X have the same meanings as above; and

n represents a number of 5 or more.

12. A method according to claim 11, wherein the charged particle beam is an ion beam.

13. A method according to claim 12, wherein the ion beam is at a dose of at least 10¹³ /cm².

14. A method for suppression of electrification which comprises a step of forming a first layer having a given shape on an insulating substrate, a step of forming on the substrate an electrification-suppressing film having an electron conductivity, and a step of irradiating a charged particle beam onto the substrate;

said electrification-suppressing film comprising a conducting polymer having a monomeric structure unit represented by the following formula (I), (II), (III), (III'"'"'), OR (III");

##STR7## wherein Ht represents NH, S or O, R represents R'"'"' or OR'"'"' in which R'"'"' represents a linear or branched divalent hydrocarbon group having 1 to 10 carbon atoms or a divalent hydrocarbon group containing an ether linkage;

X represents SO₃ ;

Z represents OR'"'"'X--H, OR'"'"'H, H or OH in which R'"'"' and X have the same meanings as above; and

n represents a number of 5 or more.

15. A method according to claim 14, wherein the first layer comprises a metal.

16. A method according to claim 14, wherein the charged particle beam is an electron beam.

17. A method for suppression of electrification which comprises the step of forming a first layer having a given shape on an insulating substrate, a step forming a phase shift layer on the first layer, a step of forming a resist layer on the phase shift layer, a step of forming on the resist layer an electrification-suppressing film having an electron conductivity, a step of forming a resist layer on the electrification-suppressing layer, and a step of irradiating a charged particle beam onto the substrate;

said electrification-suppressing film comprising a conducting polymer having a monomeric structure unit represented by the following formula (I), (II), (III), (III'"'"'), OR (III");

##STR8## wherein Ht represents NH, S or O;

R represents R'"'"' or OR'"'"' in which R'"'"' represents a linear or branched divalent hydrocarbon group having 1 to 10 carbon atoms or a divalent hydrocarbon group containing an ether linkage;

X represents SO₃ ;

Z represents OR'"'"'X--H, OR'"'"'H, H or OH in which R'"'"' and X have the same meanings as above; and

n represents a number of 5 or more.

18. A method according to claim 17, wherein the phase shifting layer comprises a silicon oxide film.

19. A method according to claim 17, wherein the first layer comprises a metal.