Electron source having a material-retaining device

• US 5,256,931 A
• Filed: 10/10/1991
• Issued: 10/26/1993
• Est. Priority Date: 10/12/1990
• Status: Expired due to Fees

• Current Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Bernadet, Henri
• Primary Examiner(s): Yusko, Donald J.
• Assistant Examiner(s): PATEL, NIMESHKUMAR D
• Application Number:
  US07/775,654
• Time in Patent Office: 747 Days
• Field of Search: 313/360.1, 313/362.1, 313/231.31, 313/231.41, 315/111.21, 315/111.31, 315/111.81
• US Class Current: 313/360.1
• CPC Class Codes: H01J 3/025 Electron guns using a discharge in a gas or a vapour as electron source gas-filled discharge tubes with gaseous cathodes H01J15/00

Abstract

The present invention relates to a vacuum arc electron source having an anode and a cathode facing each other such that they produce a plasma (P) after an appropriate voltage difference has been applied between the anode and the cathode, an electron extractor device (30) and a material-retaining device arranged between the extractor device and the plasma source. According to the invention, the material-retaining device comprises, arranged in the electron extraction direction (F), at least one upstream baffle (10) and a downstream baffle (20) which are each electrically conducting and have apertures (16, 26) arranged in quincunx, such that when the baffles (10, 20) are adjusted a given potential, the plasma (P) does not extend to downstream of the downstream baffle (20).

Claims

1. A vacuum arc electron source comprising a plasma source having an anode and a cathode facing each other such that they produce a plasma after an appropriate voltage difference has been applied between the anode and the cathode, an electron extractor device and a material-retaining device arranged between the extractor device and the plasma source, characterized, in that, the material-retaining device includes, arranged in the electron extraction direction, at least an upstream baffle and a downstream baffle which are both electrically conducting and have apertures arranged, such that when the baffles and are brought to a given potential, the plasma does not extend to downstream of the downstream baffle.

2. An electron source as claimed in claim 1, characterized, in that at least one of said apertures is a slot extending transversely to the direction of extraction of the electrons.

3. An electron source as claimed in claims 1, characterized, in that, at least one baffle has around at least one aperture an edge which is folded at the side facing the plasma source.

4. An electron source as claimed in claim 1, characterized, in that, the width of the apertures of the downstream baffle exceeds or is equal to the gap between the apertures.

5. An electron source as claimed in claim 1, characterized, in that, the distance between the baffles is at least equal to the width of the apertures and the gap between the apertures.

6. An electron source as claimed in claim 1, characterized, in that, the extractor device includes at least one extraction electrode.

7. An electron source as claimed in claim 6, further including, arranged in the electron extraction direction, an upstream extraction electrode and a downstream extraction electrode, arranged substantially in parallel.

8. An electron source as claimed in claim 7, characterized, in that, at least one extraction electrode is provided in the path located downstream of the apertures of the downstream baffles in the extraction direction of the electrons.