Electrically programmable link structures and methods of making same

• US 5,258,643 A
• Filed: 07/25/1991
• Issued: 11/02/1993
• Est. Priority Date: 07/25/1991
• Status: Expired due to Fees

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Massachusetts Institute of Technology
• Inventors: Cohen, Simon S.
• Primary Examiner(s): CARROLL, JAMES J
• Application Number:
  US07/735,427
• Time in Patent Office: 831 Days
• Field of Search: 357/51, 357/67, 357/71, 257/530, 257/637, 257/640, 257/649, 257/750, 257/763
• US Class Current: 257/530
• CPC Class Codes: H01L 23/5252 comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Methods and systems are disclosed for fabricating electrically programmable link structures by fabricating a first conductor, which comprises a refractory conductive material, then fabricating an insulative link material over the refractory conductive material and, subsequently, depositing an upper conductive material over the link material. In use, an electrical path can be formed between the first and second conductive elements by applying a voltage between such elements across at least one selected region of the insulator, such that the insulative link material is transformed in the region and rendered conductive to form an electrical signal path. The link material is preferably a silicon oxide insulator and

The U.S. Government has rights in this invention pursuant to Contract No. F19628-90-C-0002 awarded by the Department of the Air Force.

Claims

1. An electrically programmable link structure comprising:

a lower conductive element;

a transformable insulator material disposed over a portion of the lower conductive element, the transformable insulator material comprising a sandwiched structure comprising a silicon oxide layer formed between silicon nitride layer; and

an upper conductive element disposed over the insulator material, such that by applying a voltage between said upper and lower conductive elements across at least one selected region of said insulator material, the insulator material can be rendered conductive.

2. The structure of claim 1 wherein the lower conductive element comprises a refractory material having a thermal coefficient of expansion less than about 10.0×

10^-6 /°

C.

3. The structure of claim 1 wherein the lower conductive element comprises a material chosen from the group consisting of refractory metals, refractory metal alloys and refractory metal silicides.

4. The structure of claim 1 wherein the lower conductive element comprises a refractory material selected from the group consisting of molybdenum, titanium and tungsten.

5. The structure of claim 4 wherein the refractory material comprises molybdenum.

6. The structure of claim 1 wherein the lower conductive element comprises an overcoating of a thin layer of a non-refractory conductive material over refractory conductive material.

7. The structure of claim 6 wherein the non-refractory conductive overcoating is aluminum.

8. The structure of claim 6 wherein the non-refractory conductive overcoating is silicon.

9. The structure of claim 1 wherein the thickness of the oxide layer ranges from about 5 to about 30 nanometers.

10. The structure of claim 1 wherein the thickness of each silicon nitride layer ranges from about 5 to about 30 nanometers.

11. The structure of claim 1 wherein the silicon nitride layer is silicon-rich.

12. The structure of claim 11 where in the nitride is a composition according to the formula SiN_y where y ranges from about 0.3 to about 1.3.

13. The structure of claim 1 wherein the upper conductive element comprises aluminum.

14. The structure of claim 1 wherein the upper conductive element comprises a refractory material having a thermal coefficient of expansion less than about 10.0×

10^-6 /°

C.

15. The structure of claim 1 wherein the upper conductive element comprises a material chosen from the group consisting of refractory metals, refractory metal alloys and refractory metal silicides.

16. The structure of claim 1 wherein the upper conductive element comprises a refractory material selected from the group consisting of molybdenum, titanium and tungsten.

17. The structure of claim 16 wherein the refractory material comprises molybdenum.

18. The structure of claim 1 wherein the upper conductive element comprises an undercoating of a thin layer of a non-refractory conductive material under a layer of refractory conductive material.

19. The structure of claim 18 wherein the non-refractory conductive undercoating is aluminum.

20. The structure of claim 18 wherein the non-refractory conductive undercoating is silicon.

21. The structure of claim 1 wherein the insulator material is rendered conductive with a voltage of less than 13 volts.

22. The structure of claim 21 wherein the conductive elements comprise nonrefractory material.

23. The structure of claim 21 wherein the conductive elements comprise aluminum.

24. An electrically programmable link structure comprising:

a lower conductive element;

a transformable insulator material disposed over the lower conductive element, the transformable insulator material comprising a sandwiched structure of a silicon oxide layer interposed between silicon nitride layers, the silicon oxide layer having the thickness greater than about 5 nm; and

an upper conductive element disposed over the insulator material, such that by applying over the between said upper and lower conductive elements across at least one selected region of said insulator material, the insulator material can be rendered conductive.

25. The structure of claim 24, wherein the silicon nitride and the silicon oxide layers each have a thickness ranging from about 5 nm to about 30 nm.

26. The structure of claim 24 wherein the insulator material is rendered conductive with a voltage of less than 13 volts.

27. The structure of claim 24 wherein the conductive elements comprise nonrefractory material.

28. The structure of claim 24 wherein the conductive elements comprise aluminum.

29. An electrically programmable link structure comprising:

a lower conductive element;

a transformable insulator material disposed over the lower conductive element, the transformable insulator material comprising a sandwiched structure comprising a silicon oxide layer and at least one silicon nitride layer formed by a low temperature chemical vapor deposition; and

an upper conductive element disposed over the insulator material, such that by applying a voltage between said upper and lower conductive elements across at least one selected region of said insulator material, the insulator material can be rendered conductive, wherein the transformable insulator material comprises the silicon oxide layer interposed between silicon nitride layers.

30. A structure of claim 29 wherein the insulator material is rendered conductive with a voltage of less than 13 volts.

31. A structure of claim 29 wherein the conductive elements comprise nonrefractory material.

32. A structure of claim 29 wherein the conductive elements comprise aluminum.

33. An electrically programmable link structure comprising:

a lower conductive element;

a transformable insulator material disposed over the lower conductive element, the transformable insulator material comprising a silicon oxide layer having a thickness greater than 5 nm and at least one barrier layer; and

an upper conductive element disposed over the insulator material, such that by applying a voltage between the upper and lower conductive elements across at least one selected region of the insulator material, the insulator material is rendered conductive, wherein the silicon oxide layer is interposed between silicon nitride barrier layers.

34. A structure of claim 33 wherein the insulator material is rendered conductive with a voltage of less than 13 volts.

35. A structure of claim 33 wherein the conductive elements comprise nonrefractory material.

36. An electrically programmable link structure comprising:

a lower conductive element comprising aluminum;

a transformable insulator material disposed over a portion of the lower conductive element, the transformable insulator material comprising a sandwich structure comprising a silicon oxide layer formed between silicon nitride layers through a low temperature deposition process, the oxide layer being of low quality and of a thickness greater than 5 nm; and

an upper conductive element comprising aluminum disposed over the insulator material, such that by applying a voltage of less than 13 volts between said upper and lower conductive elements across at least one selected region of said insulator material, the insulator material is rendered conductive.