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Sensor

  • US 5,259,247 A
  • Filed: 01/27/1992
  • Issued: 11/09/1993
  • Est. Priority Date: 02/28/1991
  • Status: Expired due to Fees
First Claim
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1. A sensor for measuring pressure or acceleration, which has a monocrystalline silicon substrate with a succession of thin films applied to its first primary surface, wherein a structure having at least a first substructure is formed in these films, so that the first substructure is oriented parallel to the first primary surface of the silicon substrate, and there is a gap between the first substructure and the primary surface, characterized in thatthe silicon substrate (10) is structured and has a frame (11) with a deflectable membrane (12) formed in the first primary surface;

  • that the membrane (12) has a reinforcement zone;

    that the first substructure is joined to the membrane (12) in the region of the reinforcement zone;

    that the first substructure extends past the membrane (12) at least partway over the frame (11);

    that the first substructure forms an electrode of a capacitor; and

    that at least one first counterelectrode (161,

         162) of the capacitor is disposed in the region of the frame (11) opposite the first substructure.

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