Method to form self-aligned gate structures and focus rings
First Claim
1. A process for the formation of self-aligned gate and focus ring structures around an electron emitter, said process comprising the following steps:
- planarizing at least one electron emitter overlaid with insulating and conductive layers, said planarizing involving chemical mechanical means; and
selectively removing said insulating and conductive layers, thereby exposing at least a portion of said electron emitter.
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Accused Products
Abstract
A selective etching and chemical mechanical planarization process for the formation of self-aligned gate and focus ring structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a first conformal layer, iii) deposited with a conductive material layer, iv) deposited with a second conformal insulating layer, v) deposited with a focus electrode ring material layer, vi) optionally deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose a portion of the second conformal layer, viii) etched to form a self-aligned gate and focus ring, and thereby expose the emitter tip, afterwhich xi) the emitter tip may be coated with a low work function material.
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Citations
20 Claims
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1. A process for the formation of self-aligned gate and focus ring structures around an electron emitter, said process comprising the following steps:
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planarizing at least one electron emitter overlaid with insulating and conductive layers, said planarizing involving chemical mechanical means; and selectively removing said insulating and conductive layers, thereby exposing at least a portion of said electron emitter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A process for the formation of multiple grid structures around an electron emitter, said process comprising the following steps:
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forming at least one cathode on a substrate; forming at least two insulating layers superjacent said cathode; depositing at least two conductive material layers superjacent said insulating layers; planarizing said layers by chemical mechanical planarization (CMP); and removing said layers to expose at least a portion of said cathode. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A process for the formation of self-aligned gate and focus ring structures around an electron emitting tip, said process comprising the following steps:
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forming at least one cathode on a substrate, said cathode having an emitter tip; forming a first insulating layer superjacent said emitter tip; depositing a conductive material layer superjacent said first insulating layer; depositing a second insulating layer superjacent said conductive material layer; depositing a focus electrode material layer superjacent said second insulating layer; polishing said substrate by chemical mechanical planarization (CMP) to expose at least a portion of said conductive material layer; and selectively removing said layers to expose the emitter tip. - View Dependent Claims (19, 20)
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Specification