Integrated infrared sensitive bolometers

• US 5,260,225 A
• Filed: 11/09/1992
• Issued: 11/09/1993
• Est. Priority Date: 12/20/1991
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Yue, Cheisan J., Liu, Michael S., Haviland, Jeffrey S.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): Picardat, Kevin M.
• Application Number:
  US07/973,606
• Time in Patent Office: 365 Days
• Field of Search: 437/3, 437/4, 437/974, 250/338.4, 250/332, 250/371, 250/370.14
• US Class Current: 438/54
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: H01L 31/03682 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/546 Polycrystalline silicon PV cells
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A method for fabricating an integrated infrared sensitive bolometer having a polycrystalline element whereby an oxide region deposited on silicon nitride covered with a first polysilicon layer which is etched to provide a location for a bolometer element. A second polysilicon layer is deposited and doped to achieve a desired temperature coefficient of resistivity of 1 to 2%/°C. The second polysilicon layer forms an IR sensitive element over the oxide region. Openings are etched in the IR sensitive element to permit an etchant to remove the oxide region resulting in the sensitive element being suspended over a cavity.

Claims

1. A method of fabricating an infrared sensitive bolometer having an infrared sensitive element, comprising:

providing a semiconductor substrate having a first insulating layer;

depositing an oxide layer on said first insulating layer;

masking and etching said oxide layer to form a remaining oxide region;

depositing a first layer of polysilicon;

masking and etching said first layer of polysilicon at said remaining oxide region;

depositing a second layer of polysilicon;

implanting ions into said second layer of polysilicon to achieve a predetermined temperature coefficient of resistance (TCR);

masking and etching said second layer of polysilicon to define at least one opening in said infrared sensitive element;

applying etchant through said at least one opening to remove said remaining oxide region and to form a cavity with said infrared sensitive element suspended over said cavity.

2. The method of claim 1 wherein said step of implanting ions into said second layer of polysilicon includes implanting ions of an element selected from the group including arsenic, phosphorous or boron.

3. The method of claim 2 wherein said step of implanting ions into said second layer of polysilicon includes implanting arsenic ions to achieve a TCR of about 1 to 2%/°

C.

4. The method of claim 3 wherein said arsenic ions are implanted at an energy of about 60 KeV.

5. A method of fabricating a bolometer having an infrared sensitive element comprising:

providing a semiconductor substrate;

depositing an oxide layer on said semiconductor substrate;

selectively removing a portion of said oxide layer to form a remaining oxide region;

depositing a first layer of polysilicon;

selectively removing said first layer of polysilicon at said remaining oxide region;

depositing a second layer of polysilicon;

implanting ions onto said second layer of polysilicon to achieve a predetermined temperature coefficient of resistance (TCR);

defining at least one opening in said infrared sensitive element;

applying etchant through said at least one opening to remove a substantial portion of said remaining oxide region to form a cavity with said infrared sensitive element suspended over said cavity.

6. The method of claim 5 wherein said step of implanting ions into said second layer of polysilicon includes implanting ions of an element selected from the group including arsenic, phosphorous or boron.

7. The method of claim 5 wherein said step of implanting ions into said second layer of polysilicon includes implanting ions to achieve a TCR of between about 1% per °

C. and about 7% per °

C.

8. The method of claim 6 wherein said step of implanting ions into said second layer of polysilicon includes implanting arsenic ions to achieve a TCR of about 1 to 2%/°

C.

9. The method of claim 7 wherein said step of implanting ions into said second layer of polysilicon includes implanting arsenic ions to achieve a TCR of about 1 to 2%/°

C.

10. The method of claim 9 wherein said arsenic ions are implanted at an energy of about 60 KeV.