High energy density nuclide-emitter, voltaic-junction battery
First Claim
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1. An electric battery comprising:
- (a) a semiconductor junction incorporating an inorganic crystalline compound of Group III and Group V elements of the Periodic Table characterized by a predetermined annealing temperature for defects therein;
(b) a nuclear source of relatively high energy radiation and concomitant heat, said radiation causing generation of said defects in said semiconductor junction; and
(c) a thermal impedance enclosure for said nuclear source and said semiconductor-junction for retaining therewithin a sufficient quantity of heat generated by said nuclear source to maintain a functional relationship between said generation of defects and said predetermined annealing temperature during operation;
(d) said semiconductor junction characterized by a radiation damage threshold;
(e) said nuclear source being radionuclide selected from the class consisting of alpha, gamma and beta emitters;
(f) said nuclear source being a radionuclide having a relatively high energy above said radiation damage threshold;
(g) said normal operating temperature within said thermal impedance enclosure being at least as great as said predetermined annealing temperature.
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Abstract
An electric battery comprises a semiconductor junction incorporating an inorganic crystalline compound of Group III and Group V elements of the Periodic Table characterized by a predetermined annealing temperature for defects therein; a nuclear source of relatively high energy radiation and concomitant heat, which radiation causes generation of such defects in the semiconductor junction; and a thermal impedance enclosure for the nuclear source and the semiconductor-junction for retaining therewithin a sufficient quantity of heat to maintain a functional relationship between the generation of defects and the predetermined annealing temperature during operation.
74 Citations
19 Claims
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1. An electric battery comprising:
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(a) a semiconductor junction incorporating an inorganic crystalline compound of Group III and Group V elements of the Periodic Table characterized by a predetermined annealing temperature for defects therein; (b) a nuclear source of relatively high energy radiation and concomitant heat, said radiation causing generation of said defects in said semiconductor junction; and (c) a thermal impedance enclosure for said nuclear source and said semiconductor-junction for retaining therewithin a sufficient quantity of heat generated by said nuclear source to maintain a functional relationship between said generation of defects and said predetermined annealing temperature during operation; (d) said semiconductor junction characterized by a radiation damage threshold; (e) said nuclear source being radionuclide selected from the class consisting of alpha, gamma and beta emitters; (f) said nuclear source being a radionuclide having a relatively high energy above said radiation damage threshold; (g) said normal operating temperature within said thermal impedance enclosure being at least as great as said predetermined annealing temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 17, 18, 19)
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10. An electric battery comprising:
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(a) a stack of power cells including radionuclide emitter strata and voltaic junction strata; (b) said radionuclide emitter strata constituting a nuclear source of relatively high energy radiation and hat; (c) said voltaic junction strata being composed of semiconductor compounds of Group III and Group V elements of the periodic table subject to generation of mobile defects therein characterized by a predetermined annealing temperature; (d) a thermal impedance enclosure for said stack for retaining therewithin a sufficient quantity of heat generated by said nuclear source to maintain said semiconductor junction strata above said predetermined annealing temperature during operation; (e) said semiconductor junction strata being characterized at their opposite surfaces by p-regions and n-regions, positive conductor terminals being operatively connected to said p-regions, negative conductor terminals being operatively connected to said n-regions; (f) said positive conductor terminals and said negative conductor terminals being accessible externally of said thermal impedance enclosure. (g) said semiconductor junction being characterized by a radiation semiconductor threshold (h) said nuclear source being a radionuclide selected from the class consisting of alpha, beta, and gamma emitters; (i) said nuclear source being a radionuclide having a relatively high energy above said radiation damage threshold; (j) said normal operating temperature within said thermal impedance enclosure is at least as great as said predetermined annealing temperature. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification