Method for remotely powering a device such as a lunar rover
First Claim
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1. A method of supplying power to a device located on the surface of a planet, comprising the steps of:
- orbiting at least one satellite around the planet, wherein the satellite comprises a nuclear reactor for generating electrical power;
generating electrical power via the nuclear reactor;
converting the generated electrical power into a GaAlAs laser beam;
directing the GaAlAs laser beam from the at least one satellite to the device; and
converting the power of the GaAlAs laser beam into electrical power for use by the device, said converting step comprising directing the GaAlAs laser beam through a layer of n-GaAlAs semiconductor, through a layer of p-GaAlAs semiconductor, and then through a layer of p-GaAs semiconductor, whereby an electric current is generated.
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Abstract
A method of supplying power to a device such as a lunar rover located on a planetary surface is provided according to the present invention. At least one, and preferably three, laser satellites are set in orbit around the planet. Each satellite contains a nuclear reactor for generating electrical power. This electrical power is converted into a laser beam which is passed through an amplifying array and directed toward the device such as a lunar rover. The received laser beam is then converted into electrical power for use by the device.
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6 Claims
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1. A method of supplying power to a device located on the surface of a planet, comprising the steps of:
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orbiting at least one satellite around the planet, wherein the satellite comprises a nuclear reactor for generating electrical power; generating electrical power via the nuclear reactor; converting the generated electrical power into a GaAlAs laser beam; directing the GaAlAs laser beam from the at least one satellite to the device; and converting the power of the GaAlAs laser beam into electrical power for use by the device, said converting step comprising directing the GaAlAs laser beam through a layer of n-GaAlAs semiconductor, through a layer of p-GaAlAs semiconductor, and then through a layer of p-GaAs semiconductor, whereby an electric current is generated. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification