Method for producing hydrogen and oxygen from water

• US 5,262,023 A
• Filed: 08/19/1992
• Issued: 11/16/1993
• Est. Priority Date: 08/20/1991
• Status: Expired due to Fees

• Current Assignee: Director-General of the Agency of Industrial Science and Technology, the Ministry of International Trade and Industry of Japan (Government of Japan)
• Original Assignee: Director-General of the Agency of Industrial Science and Technology, the Ministry of International Trade and Industry of Japan (Government of Japan)
• Inventors: Arakawa, Hironori, Sayama, Kazuhiro
• Primary Examiner(s): LANGEL, WAYNE A
• Application Number:
  US07/932,255
• Time in Patent Office: 454 Days
• Field of Search: 423/657, 204/157.5, 204/157.52
• US Class Current: 204/157.5
• CPC Class Codes: C01B 13/0207 Water
• CPC Class Codes: C01B 3/042 Decomposition of water
• CPC Class Codes: Y02E 60/36 Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

Abstract

There is disclosed a method for producing hydrogen and oxygen photocatalytically from water, which comprises bringing an aqueous solution of carbonate into contact with a semiconductor carrying a metal or a metal compound and irradiating the aqueous solution with light.

Claims

1. A method for producing hydrogen and oxygen photocatalytically from water, which comprises bringing an aqueous solution of carbonate having a pH greater than 8 into contact with a semiconductor carrying a metal or a metal compound and irradiating the aqueous solution.

2. The method as claimed in claim 1, wherein the semiconductor is selected from the group consisting of TiO₂, SrTiO₃, Ta₂ O₅, ZrO₂, HfO₂, K₄ Nb₆ O₁₇, Na₂ Ti₆ O₁₃, K₂ Ti₆ O₁₃, and BaTi₄ O₉.

3. The method as claimed in claim 1, wherein the metal or the metal in the metal compound is selected from the group consisting of Pt, Rh, Ni, Cu, and Ru.

4. The method as claimed in claim 1, wherein the metal compound is an oxide.

5. The method as claimed in claim 1, wherein the semiconductor is in a form of powder, pellet or membrane.

6. The method as claimed in claim 1, wherein powder of the semiconductor is suspended in the solution in the range of 0.001 to 10 wt %, based on the solution.

7. The method as claimed in claim 1, wherein the metal or metal compound carried on the semiconductor is in 0.01 wt % or more based on the semiconductor.

8. The method as claimed in claim 1, wherein the concentration of the carbonate is saturated or less in the aqueous solution.

9. The method as claimed in claim 1, wherein the carbonate is sodium carbonate or potassium carbonate.

10. The method as claimed in claim 1, wherein the carbonate solution is a saturated carbonate solution.

11. The method as claimed in claim 1, wherein the light having a wavelength of ultraviolet region is radiated.

12. The method as claimed in claim 1, wherein the reaction is carried out under reduced pressure.