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Semiconductor rectifier having high breakdown voltage and high speed operation

  • US 5,262,669 A
  • Filed: 04/17/1992
  • Issued: 11/16/1993
  • Est. Priority Date: 04/19/1991
  • Status: Expired due to Term
First Claim
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1. A semiconductor rectifier comprising:

  • a semiconductor substrate including a first semiconductor layer of one conductivity type and a second semiconductor layer of the one conductivity type provided on said first semiconductor layer;

    a plurality of third semiconductor layers of an opposite conductivity type formed in said second semiconductor layer to provide pn junctions therebetween, said plurality of third semiconductor layers defining exposed regions of said second semiconductor layer;

    a metal layer provided over an entire surface of said semiconductor substrate including said plurality of third semiconductor layers to provide Schottky barrier contact surfaces between said metal layer and each of said exposed regions of said second semiconductor layer; and

    each of said plurality of third semiconductor layers being provided to satisfy two conditions given by 0°

    <

    θ



    135° and

    3Wbi

    W≦

    2WB, where θ

    is an angle between one of said contact surfaces and a tangent line passing through a point f on one of said pn junctions through which a straight line passes from a top of a built-in depletion layer in parallel with each of said contact surfaces and where Wbi is a thickness of said built-in depletion layer extending to said second semiconductor layer at zero bias voltage, W is a width of each of said contact surfaces and WB is a thickness of a depletion layer at breakdown of each of said pn junctions, respectively.

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